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TISP4030H1BJR-S

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BOURNS Semiconductor Discharge Tubes (TSS), SMB(DO-214AA). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TISP4030H1BJR-S

BOURNS · Semiconductor Discharge Tubes (TSS) · SMB(DO-214AA)

TISP4030H1BJR-S from BOURNS, in a SMB(DO-214AA). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 R passive Terminal R, the line designator B terminal of this two-terminal bidirectional thyristor overvoltage protector, has a repetitive peak off-state voltage of ±15 V and a breakover voltage V(BO) of ±30 V for the TISP4030H1BJ.
2 T passive Terminal T, the line designator A terminal of this two-terminal bidirectional thyristor overvoltage protector, has a repetitive peak off-state voltage of ±15 V and a breakover voltage V(BO) of ±30 V for the TISP4030H1BJ.

Key specifications

Parameter Value
Manufacturer BOURNS
Package SMB(DO-214AA)
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state voltage (TISP4030) VDRM -15 15 V 2
Repetitive peak off-state current IDRM -5 5 µA VD = VDRM 2
Breakover voltage V(BO) -30 30 V di/dt = 0.8 A/ms 2
Impulse breakover voltage (TISP4025/TISP4030 column) V(BO) -57 57 V dv/dt ≤ ±1000 V/µs, linear voltage ramp, max ramp value ±500 V; di/dt = ±12 A/µs, linear current ramp, max ramp value ±10 A 2
Breakover current I(BO) -0.8 0.8 A di/dt = ±0.8 A/ms 2
On-state voltage VT -3 3 V IT = ±5 A, t = 100 µs 2
Off-state current (TISP4030) ID -2 2 µA VD = ±13 V 2
Holding current IH -50 50 mA IT = ±5 A, di/dt = ±30 mA/ms 2
Off-state capacitance (TISP4025/TISP4030 column) Coff 62 81 pF f = 1 MHz, Vd = 1 V rms, VD = 0 3
Off-state capacitance (TISP4025/TISP4030 column) Coff 55 72 pF f = 1 MHz, Vd = 1 V rms, VD = 1 V 3
Off-state capacitance (TISP4025/TISP4030 column) Coff 50 65 pF f = 1 MHz, Vd = 1 V rms, VD = 2 V 3
Non-repetitive peak on-state pulse current 2/10 µs ITSP -500 500 A 2/10 µs (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape) 2
Non-repetitive peak on-state pulse current 8/20 µs ITSP -400 400 A 8/20 µs (IEC 61000-4-5, 1.2/50 voltage, 8/20 current) 2
Non-repetitive peak on-state pulse current 10/160 µs ITSP -200 200 A 10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 2
Non-repetitive peak on-state pulse current 5/310 µs ITSP -150 150 A 5/310 µs (ITU-T K.20/45/21, 10/700 µs voltage wave shape) 2
Non-repetitive peak on-state pulse current 5/320 µs ITSP -150 150 A 5/320 µs (FCC Part 68, 9/720 µs voltage wave shape) 2
Non-repetitive peak on-state pulse current 10/560 µs ITSP -125 125 A 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 2
Non-repetitive peak on-state pulse current 10/1000 µs ITSP -100 100 A 10/1000 µs (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape) 2
Non-repetitive peak on-state current 20 ms (50 Hz) full sine wave ITSM 45 A 20 ms (50 Hz) full sine wave 2
Non-repetitive peak on-state current 16.7 ms (60 Hz) full sine wave ITSM 50 A 16.7 ms (60 Hz) full sine wave 2
Non-repetitive peak on-state current 0.2 s 50/60 Hz a.c. ITSM 21 A 0.2 s 50 Hz/60 Hz a.c. 2
Non-repetitive peak on-state current 2 s 50/60 Hz a.c. ITSM 7 A 2 s 50 Hz/60 Hz a.c. 2
Non-repetitive peak on-state current 1000 s 50/60 Hz a.c. ITSM 2 A 1000 s 50 Hz/60 Hz a.c. 2
Initial rate of rise of current (2/10 waveshape) di/dt 450 A/µs 2/10 waveshape 2
Junction temperature TJ -40 150 °C 2
Storage temperature range Tstg -65 150 °C 2
Junction to free air thermal resistance RθJA 115 °C/W EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C 3
Junction to free air thermal resistance (populated line card) RθJA 52 °C/W 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 °C 3

CAD (KiCad official)

  • Symbol: TISP4030H1BJR-S
  • Footprint: Diode_SMD:D_SMB
  • 3D model: SMB(DO-214AA) (KiCad packages3D, STEP)
  • 3D model files: tisp4030h1bjr-s-etched.step / tisp4030h1bjr-s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tisp4030h1bjr-s.step / tisp4030h1bjr-s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: BOURNS datasheet (10 pp, sha256 486649be6dea4a97, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF