component
TISP4011H1BJR-S
Public Made by Adomby adom
BOURNS Semiconductor Discharge Tubes (TSS), DO-214AA. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTISP4011H1BJR-S
BOURNS · Semiconductor Discharge Tubes (TSS) · DO-214AA
TISP4011H1BJR-S from BOURNS, in a DO-214AA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | R | passive | Terminal R (alternative line designator B) is the reference terminal for all datasheet measurements, and the device is rated for a repetitive peak off-state voltage VDRM of ±5.25 V. |
| 2 | T | passive | Terminal T (alternative line designator A) is the other terminal of the symmetrical bidirectional thyristor protector, with a breakover voltage of 9 V min and 10.5 V typ at di/dt = ±1 mA/µs. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BOURNS |
| Package | DO-214AA |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Leakage current | ID | 1 | 200 | µA | VD = VDRM | 1 | |
| Breakover voltage | V(BO) | 9 | 10.5 | V | di/dt = ±1 mA/µs | 1 | |
| Breakover current | I(BO) | 75 | 200 | mA | di/dt = ±1 mA/µs | 1 | |
| On-state voltage | VT | 3 | V | IT = ±5 A | 1 | ||
| Holding current | IH | 20 | 60 | mA | IT = ±5 A, di/dt = ±1 mA/µs | 1 | |
| Off-state capacitance | Coff | 110 | pF | Vd = 0 V, f = 1 MHz, 1 Vrms | 1 | ||
| Repetitive peak off-state voltage | VDRM | -5.25 | 5.25 | V | 1 | ||
| Non-repetitive peak on-state pulse current | IPPSM | -100 | 100 | A | 10/1000 µs | 1 | |
| Non-repetitive peak on-state pulse current | IPPSM | -500 | 500 | A | 2/10 µs | 1 | |
| Junction temperature | TJ | -40 | 150 | °C | 1 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
TISP4011H1BJR-S - Footprint:
Diode_SMD:D_SMB - 3D model: DO-214AA (KiCad packages3D, STEP)
- 3D model files:
tisp4011h1bjr-s-etched.step/tisp4011h1bjr-s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tisp4011h1bjr-s.step/tisp4011h1bjr-s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: BOURNS datasheet (3 pp, sha256
001e4d5336a6da42, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).