component
THS3111IDR
Public Made by Adomby adom
Texas Instruments Operational Amplifier, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTHS3111IDR
Texas Instruments · Operational Amplifier · SOIC-8
THS3111IDR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | NC | unconnected | No internal connection. |
| 2 | VIN− | power_in | Inverting input of the current-feedback amplifier; differential input voltage is limited to ±4 V. |
| 3 | VIN+ | power_in | Noninverting input of the current-feedback amplifier; input voltage must stay within ±VS and differential input within ±4 V. |
| 4 | VS− | power_in | Negative supply; dual-supply operation is ±5 V to ±15 V (single supply 10 V to 30 V, 33 V absolute maximum VS− to VS+). |
| 5 | NC | unconnected | No internal connection. |
| 6 | VOUT | output | Amplifier output; absolute maximum output current is 300 mA. |
| 7 | VS+ | power_in | Positive supply; dual-supply operation is ±5 V to ±15 V (single supply 10 V to 30 V, 33 V absolute maximum VS− to VS+). |
| 8 | NC | unconnected | No internal connection. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8 |
| Category | Amplifiers/Comparators |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Recommended maximum slew rate for repetitive signals | 900 | V/μs | 4 | ||||
| Transimpedance | 0.5 | 1 | MΩ | VO = ±3.75 V, gain = 1; VS = ±15 V; −40°C to +85°C | 4 | ||
| Input offset voltage | 3 | 12 | mV | VCM = 0 V; VS = ±15 V; −40°C to +85°C | 4 | ||
| Noninverting input bias current | 1 | 6 | μA | VCM = 0 V; VS = ±15 V; −40°C to +85°C | 4 | ||
| Inverting input bias current | 1.5 | 20 | μA | VCM = 0 V; VS = ±15 V; −40°C to +85°C | 4 | ||
| Input offset current | 2.5 | 20 | μA | VCM = 0 V; VS = ±15 V; −40°C to +85°C | 4 | ||
| Input common-mode voltage range | 12.5 | 13.3 | V | VS = ±15 V; −40°C to +85°C | 4 | ||
| Common-mode rejection ratio | 60 | 68 | dB | VCM = ±12.5 V; VS = ±15 V; −40°C to +85°C | 4 | ||
| Output voltage swing, RL = 1 kΩ | 12.5 | 13.5 | V | RL = 1 kΩ; VS = ±15 V; −40°C to +85°C | 4 | ||
| Output voltage swing, RL = 100 Ω | 12 | 13.4 | V | RL = 100 Ω; VS = ±15 V; −40°C to +85°C | 4 | ||
| Output current (sourcing) | 175 | 260 | mA | RL = 25 Ω; VS = ±15 V; −40°C to +85°C | 4 | ||
| Output current (sinking) | 175 | 260 | mA | RL = 25 Ω; VS = ±15 V; −40°C to +85°C | 4 | ||
| Specified operating voltage | 15 | 16 | V | −40°C to +85°C | 5 | ||
| Maximum quiescent current | 4.8 | 7.5 | mA | VS = ±15 V; −40°C to +85°C | 5 | ||
| Minimum quiescent current | 2.5 | 4.8 | mA | VS = ±15 V; −40°C to +85°C | 5 | ||
| Power-supply rejection (+PSRR) | 60 | 75 | dB | VS+ = 15.5 V to 14.5 V, VS− = 15 V; −40°C to +85°C | 5 | ||
| Power-supply rejection (−PSRR) | 55 | 69 | dB | VS+ = 15 V, VS− = −15.5 V to −14.5 V; −40°C to +85°C | 5 | ||
| Power-down quiescent current | 270 | 500 | μA | PD ≥ REF + 2 V; VS = ±15 V; −40°C to +85°C | 5 | ||
| Transimpedance | 0.5 | 1 | MΩ | VO = ±1.25 V, gain = 1; VS = ±5 V; −40°C to +85°C | 6 | ||
| Input offset voltage | 6 | 12 | mV | VCM = 0 V; VS = ±5 V; −40°C to +85°C | 6 | ||
| Noninverting input bias current | 1 | 6 | μA | VCM = 0 V; VS = ±5 V; −40°C to +85°C | 6 | ||
| Inverting input bias current | 1 | 10 | μA | VCM = 0 V; VS = ±5 V; −40°C to +85°C | 6 | ||
| Input offset current | 1 | 8 | μA | VCM = 0 V; VS = ±5 V; −40°C to +85°C | 6 | ||
| Input common-mode voltage range | 2.8 | 3.2 | V | VS = ±5 V; −40°C to +85°C | 6 | ||
| Common-mode rejection ratio | 58 | 65 | dB | VCM = ±2.5 V; VS = ±5 V; −40°C to +85°C | 6 | ||
| Output voltage swing, RL = 1 kΩ | 3.6 | 4 | V | RL = 1 kΩ; VS = ±5 V; −40°C to +85°C | 6 | ||
| Output voltage swing, RL = 100 Ω | 3.5 | 3.8 | V | RL = 100 Ω; VS = ±5 V; −40°C to +85°C | 6 | ||
| Output current (sourcing) | 125 | 220 | mA | RL = 10 Ω; VS = ±5 V; −40°C to +85°C | 6 | ||
| Output current (sinking) | 125 | 220 | mA | RL = 10 Ω; VS = ±5 V; −40°C to +85°C | 6 | ||
| Specified operating voltage | 4.5 | 5 | V | −40°C to +85°C | 7 | ||
| Maximum quiescent current | 4 | 7 | mA | VS = ±5 V; −40°C to +85°C | 7 | ||
| Minimum quiescent current | 2 | 4 | mA | VS = ±5 V; −40°C to +85°C | 7 | ||
| Power-supply rejection (+PSRR) | 57 | 71 | dB | VS+ = 5.5 V to 4.5 V, VS− = 5 V; −40°C to +85°C | 7 | ||
| Power-supply rejection (−PSRR) | 52 | 66 | dB | VS+ = 5 V, VS− = −5.5 V to −4.5 V; −40°C to +85°C | 7 | ||
| Power-down quiescent current | 200 | 500 | μA | PD ≥ REF + 2 V; VS = ±5 V; −40°C to +85°C | 7 | ||
| Supply voltage, VS− to VS+ | 33 | V | 3 | ||||
| Differential input voltage, VID | VID | -4 | 4 | V | 3 | ||
| Output current, IO | IO | 300 | mA | 3 | |||
| Maximum junction temperature, TJ | TJ | 150 | °C | 3 | |||
| Maximum junction temperature, continuous operation | TJ | 125 | °C | Continuous operation, long-term reliability | 3 | ||
| Operating free-air temperature, TA (industrial) | TA | -40 | 85 | °C | Industrial | 3 | |
| Storage temperature, Tstg | Tstg | -65 | 125 | °C | 3 | ||
| ESD rating, HBM | 900 | Human body model | 3 | ||||
| ESD rating, CDM | 1500 | Charged device model | 3 | ||||
| ESD rating, MM | 200 | Machine model | 3 | ||||
| Dual supply voltage (magnitude) | 5 | 15 | V | Dual supply, printed as ±5 (min) and ±15 (max) | 3 | ||
| Single supply voltage | 10 | 30 | V | Single supply | 3 | ||
| Operating free-air temperature, TA (industrial) | TA | -40 | 85 | °C | Industrial | 3 | |
| Operating junction temperature, continuous, TJ | TJ | -40 | 125 | °C | 3 | ||
| Normal storage temperature, TSTG | TSTG | -40 | 85 | °C | 3 | ||
| Power rating, TA = +25°C | 1.05 | W | D-8 (SOIC) package, TJ = +125°C, JEDEC low-K test PCB | 2 | |||
| Power rating, TA = +85°C | 421 | mW | D-8 (SOIC) package, TJ = +125°C, JEDEC low-K test PCB | 2 | |||
| Thermal resistance, junction-to-case, θJC | θJC | 38.3 | °C/W | D-8 (SOIC) package | 2 | ||
| Thermal resistance, junction-to-ambient, θJA | θJA | 95 | °C/W | D-8 (SOIC) package, JEDEC low-K test PCB | 2 |
CAD (KiCad official)
- Symbol:
THS3111IDR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ths3111idr-etched.step/ths3111idr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ths3111idr.step/ths3111idr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (42 pp, sha256
5e23f3dcb669543d, retrieved 2026-10-08, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).