component
TF3415
Public Made by Adomby adom
TF MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 12d ago |
| viewers | 12d ago |
| package.json | 12d ago |
| page.json | 5d ago |
| README.md | 5d ago |
| tf3415-etched.glb | 12d ago |
| tf3415-etched.step | 12d ago |
| tf3415-hero.glb | 12d ago |
| tf3415-hero.overlay.json | 12d ago |
| tf3415.glb | 12d ago |
| tf3415.kicad_mod | 12d ago |
| tf3415.kicad_sym | 12d ago |
| tf3415.lbr | 12d ago |
| tf3415.step | 12d ago |
TF3415
TF · MOSFETs · SOT-23
TF3415 from TF, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated at ±10 V maximum (VGS) per the absolute maximum ratings. |
| 2 | SOURCE | passive | Source terminal of the P-channel MOSFET; continuous source-drain diode current is rated at -1.25 A (IS) per the maximum ratings. |
| 3 | DRAIN | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated at -15 V (VDS) with continuous drain current of -4.3 A (ID) per the maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TF |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -15 | V | 1 | |||
| Gate-Source Voltage | VGS | -10 | 10 | V | 1 | ||
| Continuous Drain Current | ID | -4.3 | A | 1 | |||
| Pulsed Drain Current | IDM | -15 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -1.25 | A | 1 | |||
| Maximum Power Dissipation | PD | 1 | W | 1 | |||
| Thermal Resistance from Junction to Ambient | RθJA | 74 | ℃/W | t ≤5s | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | -15 | V | VGS = 0V, ID =-250µA | 2 | ||
| Gate-source threshold voltage | VGS(th) | -0.4 | -0.7 | -1 | V | VDS =VGS, ID =-250µA | 2 |
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS =0V, VGS =±8V | 2 | |
| Zero gate voltage drain current | IDSS | -100 | nA | VDS =-12V, VGS =0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.035 | 0.039 | Ω | VGS =-4.5V, ID =-4.3A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.047 | 0.052 | Ω | VGS =-2.5V, ID =-4.1A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.06 | 0.063 | Ω | VGS =-1.8V, ID =-2.0A | 2 | |
| Forward transconductance | gfs | 5 | S | VDS =-5V, ID =-2.0A | 2 | ||
| Gate resistance | Rg | 1.9 | 19 | Ω | f =1MHz | 2 | |
| Body diode voltage | VSD | -0.8 | -1.2 | V | IS=-1.6A | 2 |
CAD (KiCad official)
- Symbol:
TF3415 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
tf3415-etched.step/tf3415-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tf3415.step/tf3415.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TF datasheet (7 pp, sha256
f0a985152a8411af, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).