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TF2916L-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TF2916L-VB

VBsemi Elec · MOSFETs · TO-220F

TF2916L-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated at ±20 V maximum (VGS).
2 D passive Drain terminal; continuous drain current is 50 A at TC = 25 °C, limited by the package, with junction-to-case thermal resistance RthJC of 0.4 °C/W.
3 S passive Source terminal; continuous source-drain diode current IS is rated at 50 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 50 A TC = 25 °C, TJ = 175 °C 1
Continuous Drain Current ID 28 A TC = 125 °C 1
Pulsed Drain Current IDM 120 A 1
Avalanche Current IAS 31 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 61 mJ 1
Maximum Power Dissipation PD 360 W TC = 25 °C 1
Maximum Power Dissipation PD 3.7 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 40 °C/W PCB Mount (TO-263) 1
Junction-to-Case Thermal Resistance (Drain) RthJC 0.4 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VDS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 120 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance rDS(on) 0.034 Ω VGS = 10 V, ID = 30 A 2
Drain-Source On-State Resistance rDS(on) 0.063 Ω VGS = 10 V, ID = 30 A, TJ = 125 °C 2
Drain-Source On-State Resistance rDS(on) 0.084 Ω VGS = 10 V, ID = 30 A, TJ = 175 °C 2
Total Gate Charge Qg 90 130 nC VDS = 100 V, VGS = 10 V, ID = 65 A 2
Gate Resistance Rg 0.5 1.7 3.3 Ω 2
Diode Forward Voltage VSD 1 1.5 V IF = 65 A, VGS = 0 V 2
Peak Reverse Recovery Current IRM(REC) 8 12 A IF = 50 A, di/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 0.52 1.2 µC IF = 50 A, di/dt = 100 A/µs 2
Continuous Source Current (Diode) IS 50 A TC = 25 °C 2
Pulsed Source Current (Diode) ISM 120 A TC = 25 °C 2

CAD (KiCad official)

  • Symbol: TF2916L-VB
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 3269e03f3a5760ce, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF