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Contents

README

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TEA19162T

NXP Semicon · AC-DC Controllers & Regulators · SO-8

TEA19162T from NXP Semicon, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATEPFC output Gate driver output for the PFC MOSFET.
2 GND power_in Ground.
3 SNSCUR input Programmable current sense input for PFC.
4 SUPIC power_in Supply voltage; PFC enabled when it exceeds Vstart(SUPIC) of 13 V typical, and connected to the SUPIC pin of the TEA19161T.
5 SNSBOOST input Sense input for PFC output (boost) voltage, also used for OVP and open-loop protection and pulled down by the LLC to disable the PFC at start-up.
6 SNSMAINS input Sense input for mains voltage.
7 PFCCOMP passive Frequency compensation pin for PFC.
8 SNSAUX input Input from auxiliary winding for demagnetization timing and valley detection for PFC.

Key specifications

Parameter Value
Manufacturer NXP Semicon
Package SO-8
Category Power Management ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Voltage on pin SUPIC VSUPIC -0.4 38 V 20
Voltage on pin SNSMAINS VSNSMAINS -0.4 12 V current limited 20
Voltage on pin PFCCOMP VPFCCOMP -0.4 12 V current limited 20
Voltage on pin SNSAUX VSNSAUX -25 25 V current limited 20
Voltage on pin SNSCUR VSNSCUR -0.4 12 V current limited 20
Voltage on pin SNSBOOST VSNSBOOST -0.4 12 V current limited 20
Voltage on pin GATEPFC VGATEPFC -0.4 12 V current limited 20
Total power dissipation Ptot 0.45 W Tamb < 75 °C 20
Storage temperature Tstg -55 150 °C 20
Junction temperature Tj -40 150 °C 20
Electrostatic discharge voltage, HBM VESD -2000 2000 V human body model 20
Electrostatic discharge voltage, CDM VESD -500 500 V charged device model 20
Thermal resistance junction to ambient Rth(j-a) 150 K/W in free air; JEDEC test board 20
Thermal resistance junction to case Rth(j-c) 90 K/W in free air; JEDEC test board 20
Start voltage on pin SUPIC Vstart(SUPIC) 12.35 13 13.65 V Tamb=25 °C; VSUPIC = 20 V 21
Undervoltage protection voltage on pin SUPIC Vuvp(SUPIC) 8.55 9 9.45 V 21
Supply current, operating mode ICC 0.8 mA operating mode; fsw = 100 kHz; pin GATEPFC = floating; VSNSBOOST = 2.2 V 21
Supply current, power-save mode ICC 0.2 mA power-save mode; pin PFCCOMP = floating; VSNSBOOST = 2.7 V 21
Source current on pin GATEPFC Isource(GATEPFC) -0.6 A VGATEPFC = 2 V; VSUPIC ≥ 13 V 21
Sink current on pin GATEPFC Isink(GATEPFC) 0.6 A VGATEPFC = 2 V; VSUPIC ≥ 13 V 21
Sink current on pin GATEPFC Isink(GATEPFC) 1.4 A VGATEPFC = 10 V; VSUPIC ≥ 13 V 21
Maximum output voltage on pin GATEPFC Vo(max)GATEPFC 10 11 12 V 21
Brownin current Ibi 5.35 5.75 6.15 µA 21
Brownout current Ibo 4.65 5 5.35 µA 21
Hysteresis of brownout current Ibo(hys) 640 750 820 nA Ibi − Ibo 21
Brownout detection delay time td(det)bo 45.2 50 55.5 ms 21
Regulated voltage on pin SNSMAINS Vregd(SNSMAINS) 230 250 270 mV mains detection period; no current at SNSMAINS; Cmax(SNSMAINS) = 100 pF 21
X-capacitor discharge delay time td(dch) 109 118 128 ms x-capacitor discharge 21
Charge current on pin GATEPFC Ich(GATEPFC) -29 -26 -23 µA x-capacitor discharge 21
Discharge current on pin GATEPFC Idch(GATEPFC) 23 26 29 µA x-capacitor discharge 21
Stop charge voltage on pin SNSCUR Vch(stop)SNSCUR 8 10.5 12.5 mV x-capacitor discharge; stop of external MOST gate charge; dV/dt = 0 21
Stop discharge voltage on pin GATEPFC Vdch(stop)GATEPFC 0.3 0.7 1.1 V x-capacitor discharge; stop of external MOST gate discharge 21
Discharge off-time x-capacitor toff(dch) 1.88 6.4 ms time between discharge/charge pulses; GATEPFC pin 21
Pulse period x-capacitor discharge Tp 3.76 4 4.27 ms pulse duration < 2 ms (typical); GATEPFC pin 22
Disable discharge voltage on pin GATEPFC Vdis(dch)GATEPFC 9 9.45 9.9 V x-capacitor discharge 22
Disable discharge voltage on pin SNSCUR Vdis(dch)SNSCUR 44 50 56 mV x-capacitor discharge 22
Regulation voltage on pin SNSBOOST Vreg(SNSBOOST) 2.475 2.5 2.525 V IPFCCOMP = 0 A 22
Transconductance error amplifier gm -90 -75 -60 µA/V VSNSBOOST to IPFCCOMP; /VSNSBOOST − Vintregd(SNSBOOST)/ < 40 mV 22
Sink current on pin PFCCOMP Isink(PFCCOMP) 30 35.5 41 µA VSNSBOOST = 2 V; VPFCCOMP = 2.75 V 22
High transconductance error amplifier gm(high) -1.26 mA/V VSNSBOOST to IPFCCOMP; Vstart(gm)high ≤ VSNSBOOST < Vstop(ovp) 22
Start high transconductance voltage Vgm(high)start 2.56 2.6 2.63 V pin SNSBOOST 22
Maximum clamp current Iclamp(max) -260 -220 -190 µA pin PFCCOMP; energy save mode; PFC off; VPFCCOMP = 0 V 22
PFC enable current Ien(PFC) -15 -11.5 -8 µA pin PFCCOMP 22
Clamp voltage on pin PFCCOMP (bidirectional) Vclamp(PFCCOMP) 3.4 3.5 3.6 V bidirectional clamp; energy save mode; PFC off 22
Clamp voltage on pin PFCCOMP (upper) Vclamp(PFCCOMP) 3.7 3.8 3.9 V upper clamp voltage; unidirectional clamp; operating mode; PFC on; IPFCCOMP = 120 µA 22

CAD (KiCad official)

  • Symbol: TEA19162T
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: tea19162t-etched.step / tea19162t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tea19162t.step / tea19162t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NXP Semicon datasheet (30 pp, sha256 9b7cfec5f28968c4, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF