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TDM3458

Public Made by Adom

by adom

Techcode Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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TDM3458

Techcode Semicon · MOSFETs · DFN-8(5x6)

TDM3458 from Techcode Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied to pins 2 and 3.
2 S passive Source of the N-channel MOSFET, tied to pins 1 and 3.
3 S passive Source of the N-channel MOSFET, tied to pins 1 and 2.
4 G input Gate of the N-channel MOSFET with ESD protection; VGS rated +/-20 V maximum.
5 D passive Drain of the N-channel MOSFET, tied to pins 6, 7 and 8; VDS rated 30 V maximum.
6 D passive Drain of the N-channel MOSFET, tied to pins 5, 7 and 8; VDS rated 30 V maximum.
7 D passive Drain of the N-channel MOSFET, tied to pins 5, 6 and 8; VDS rated 30 V maximum.
8 D passive Drain of the N-channel MOSFET, tied to pins 5, 6 and 7; VDS rated 30 V maximum.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Techcode Semicon
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS 20 V Printed as +20 only 1
Drain Current, continuous ID 60 A TC=25℃ 1
Drain Current, continuous ID 38 A TC=100℃ 1
Drain Current, current-pulsed IDM 120 A TC=25℃, Note 1 1
Maximum Power Dissipation PD 29.8 W TC=25℃ 1
Maximum Power Dissipation PD 11.9 W TC=100℃ 1
Drain Current, continuous (Note 2) ID 17.4 A TA=25℃ 1
Drain Current, continuous (Note 2) ID 13.9 A TA=70℃ 1
Maximum Power Dissipation (Note 2) PD 2.5 W TA=25℃ 1
Maximum Power Dissipation (Note 2) PD 1.6 W TA=70℃ 1
Maximum Operating Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 20 ℃/W t≤10s 2
Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 50 ℃/W Steady State 2
Thermal Resistance, Junction-to-Case RθJC 4.2 ℃/W Steady State 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=24V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.4 1.7 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 6.7 8.7 mΩ VGS=4.5V, ID=10A 2
Drain-Source On-State Resistance RDS(ON) 4.5 5.5 mΩ VGS=10V, ID=15A 2
Gate Resistance RG 1.6 2.5 Ω VDS=0V,VGS=0V, F=1.0MHz 2
Input Capacitance Ciss 780 1010 PF VDS=15V,VGS=0V, F=1.0MHz 2
Diode Forward Voltage (Note 3) VSD 0.81 1.1 V VGS=0V,IS=20A 2

CAD (KiCad official)

  • Symbol: TDM3458
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: tdm3458-etched.step / tdm3458-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tdm3458.step / tdm3458.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Techcode Semicon datasheet (8 pp, sha256 4fb15b77be35fe82, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF