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TDM3452

Techcode Semicon · MOSFETs · DFN-8(5x6)

TDM3452 from Techcode Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied internally with pins 2 and 3.
2 S passive Source of the N-channel MOSFET, tied internally with pins 1 and 3.
3 S passive Source of the N-channel MOSFET, tied internally with pins 1 and 2.
4 G input Gate of the N-channel MOSFET; VGS limit +/-20 V, threshold 1.4 to 2.4 V at 250 uA.
5 D passive Drain of the N-channel MOSFET, tied internally with pins 6, 7 and 8; VDS max 30 V.
6 D passive Drain of the N-channel MOSFET, tied internally with pins 5, 7 and 8; VDS max 30 V.
7 D passive Drain of the N-channel MOSFET, tied internally with pins 5, 6 and 8; VDS max 30 V.
8 D passive Drain of the N-channel MOSFET, tied internally with pins 5, 6 and 7; VDS max 30 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Techcode Semicon
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=24V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.4 1.7 2.4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 4.2 5.1 mΩ VGS=4.5V, ID=15A 2
Drain-Source On-State Resistance RDS(ON) 2.7 3.1 mΩ VGS=10V, ID=20A 2
Diode Forward Voltage VSD 0.81 1.1 V VGS=0V,IS=20A 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current, continuous ID 80 A TC=25℃ 1
Drain Current, continuous ID 60 A TC=100℃ 1
Drain Current, current-pulsed IDM 160 A TC=25℃ 1
Drain Current, continuous ID 23.5 A TA=25℃ 1
Drain Current, continuous ID 18.8 A TA=100℃ 1
Maximum Power Dissipation PD 2.5 W TA=25℃ 1
Maximum Operating Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 50 ℃/W Note 2 1

CAD (KiCad official)

  • Symbol: TDM3452
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: tdm3452-etched.step / tdm3452-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tdm3452.step / tdm3452.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Techcode Semicon datasheet (8 pp, sha256 5379e63737861a1f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF