component
TDM3426B
Public Made by Adomby adom
Techcode Semicon MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TDM3426B
Techcode Semicon · MOSFETs · SOT-89
TDM3426B from Techcode Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±20 V maximum and a threshold of 1.4 V min to 2.5 V max at 250 µA. |
| 2 | D | passive | Drain; rated 30 V VDS maximum and 18 A continuous at TC=25°C (limited by bonding wire), and connected to the SOT-89 tab. |
| 3 | S | passive | Source; its body diode is rated 5 A continuous forward current at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Techcode Semicon |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Diode Continuous Forward Current | Is | 5 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 18 | A | TC=25℃; max continuous current limited by bonding wire (Note 1) | 1 | ||
| Pulse Drain Current | IDM | 36 | A | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 20 | W | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 3.5 | W | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 2.2 | W | TA=70℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 35 | ℃/W | t<10s | 1 | ||
| Maximum Operating Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=24V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.4 | 1.8 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 8.2 | 10 | mΩ | VGS=10V, ID=10A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 12.3 | 16 | mΩ | VGS=4.5V, ID=8A | 2 | |
| Input Capacitance | Ciss | 450 | 600 | PF | VDS=15V,VGS=0V, F=1.0MHz | 2 | |
| Turn-on Delay Time | td(on) | 8.5 | 16 | nS | VDS=15V, RL=15 Ω, VGEN=10V, RG=6 Ω ID=1A | 2 | |
| Turn-on Rise Time | tr | 10 | 18 | nS | VDS=15V, RL=15 Ω, VGEN=10V, RG=6 Ω ID=1A | 2 | |
| Turn-Off Delay Time | td(off) | 14 | 26 | nS | VDS=15V, RL=15 Ω, VGEN=10V, RG=6 Ω ID=1A | 2 | |
| Turn-Off Fall Time | tf | 10.6 | 19 | nS | VDS=15V, RL=15 Ω, VGEN=10V, RG=6 Ω ID=1A | 2 | |
| Total Gate Charge | Qg | 8 | 12 | nC | VDS=15V,ID=10A,VGS=10V | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.1 | V | VGS=0V,IS=5A | 2 |
CAD (KiCad official)
- Symbol:
TDM3426B - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
tdm3426b-etched.step/tdm3426b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tdm3426b.step/tdm3426b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Techcode Semicon datasheet (8 pp, sha256
edc4500bc9885fa9, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TDM3426B
**Techcode Semicon** · MOSFETs · SOT-89
TDM3426B from Techcode Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±20 V maximum and a threshold of 1.4 V min to 2.5 V max at 250 µA. |
| 2 | D | passive | Drain; rated 30 V VDS maximum and 18 A continuous at TC=25°C (limited by bonding wire), and connected to the SOT-89 tab. |
| 3 | S | passive | Source; its body diode is rated 5 A continuous forward current at TC=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Techcode Semicon |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | | 1 |
| Diode Continuous Forward Current | Is | | | 5 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | 18 | A | TC=25℃; max continuous current limited by bonding wire (Note 1) | 1 |
| Pulse Drain Current | IDM | | | 36 | A | TA=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 20 | W | TC=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 3.5 | W | TA=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 2.2 | W | TA=70℃ | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 35 | ℃/W | t<10s | 1 |
| Maximum Operating Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=24V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -10 | | 10 | μA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.4 | 1.8 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 8.2 | 10 | mΩ | VGS=10V, ID=10A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 12.3 | 16 | mΩ | VGS=4.5V, ID=8A | 2 |
| Input Capacitance | Ciss | | 450 | 600 | PF | VDS=15V,VGS=0V, F=1.0MHz | 2 |
| Turn-on Delay Time | td(on) | | 8.5 | 16 | nS | VDS=15V, RL=15 Ω, VGEN=10V, RG=6 Ω ID=1A | 2 |
| Turn-on Rise Time | tr | | 10 | 18 | nS | VDS=15V, RL=15 Ω, VGEN=10V, RG=6 Ω ID=1A | 2 |
| Turn-Off Delay Time | td(off) | | 14 | 26 | nS | VDS=15V, RL=15 Ω, VGEN=10V, RG=6 Ω ID=1A | 2 |
| Turn-Off Fall Time | tf | | 10.6 | 19 | nS | VDS=15V, RL=15 Ω, VGEN=10V, RG=6 Ω ID=1A | 2 |
| Total Gate Charge | Qg | | 8 | 12 | nC | VDS=15V,ID=10A,VGS=10V | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.1 | V | VGS=0V,IS=5A | 2 |
## CAD (KiCad official)
- Symbol: `TDM3426B`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `tdm3426b-etched.step` / `tdm3426b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tdm3426b.step` / `tdm3426b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Techcode Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588909619409768449) (8 pp, sha256 `edc4500bc9885fa9`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tdm3426b-datasheet.pdf)