# TDM31056A

**Techcode Semicon** · MOSFETs · DFN5x6-8

TDM31056A from Techcode Semicon, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied internally with pins 2 and 3. |
| 2 | S | passive | Source of the N-channel MOSFET, tied internally with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied internally with pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET with VGS rated at ±20 V maximum. |
| 5 | D | passive | Drain of the N-channel MOSFET (VDS 100 V max), tied internally with pins 6, 7 and 8. |
| 6 | D | passive | Drain of the N-channel MOSFET (VDS 100 V max), tied internally with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET (VDS 100 V max), tied internally with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET (VDS 100 V max), tied internally with pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Techcode Semicon |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS |  |  | 20 | V |  | 1 |
| Drain Current, continuous | ID |  |  | 40 | A | TC=25℃ (Note 1) | 1 |
| Drain Current, continuous | ID |  |  | 27 | A | TC=100℃ (Note 1) | 1 |
| Pulsed Drain Current | IDM |  |  | 160 | A | Note 2 | 1 |
| Maximum Power Dissipation | PD |  |  | 50 | W | TC=25℃ (Note 3) | 1 |
| Avalanche Current, Single pulse | IAS |  |  | 6 | A | L=0.5mH (Note 2, Note 6) | 1 |
| Avalanche Energy, Single pulse | EAS |  |  | 32 | mJ | L=0.5mH (Note 2, Note 6) | 1 |
| Maximum Operating Junction Temperature | TJ |  |  | 150 | ℃ |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=80V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 14.3 | 16 | mΩ | VGS=10V, ID=20A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 18.8 | 22.5 | mΩ | VGS=4.5V, ID=10A | 2 |
| Diode Forward Voltage | VSD |  | 0.8 | 1 | V | VGS=0V, IS=20A | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  | 2.1 |  | ℃/W | Note 4 | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 55 |  | ℃/W | Note 4, Note 5 | 1 |

## CAD (KiCad official)

- Symbol: `TDM31056A`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `tdm31056a-etched.step` / `tdm31056a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tdm31056a.step` / `tdm31056a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Techcode Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590279226117939200) (8 pp, sha256 `69c3cbf8010eb0da`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tdm31056a-datasheet.pdf)