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TCET1103

Public Made by Adom

by adom

Vishay Intertech Transistor Output Optocoupler, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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TCET1103

Vishay Intertech · Transistor Output Optocoupler · DIP-4

TCET1103 from Vishay Intertech, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A input Anode of the gallium arsenide infrared-emitting diode, with forward current limited to 60 mA (1.5 A surge for tp ≤ 10 µs) and reverse voltage limited to 6 V.
2 C passive Cathode of the infrared-emitting diode (input side), VF typically 1.25 V and max 1.6 V at IF = 50 mA.
3 E passive Emitter of the phototransistor output, with emitter-collector voltage limited to 7 V.
4 C passive Collector of the phototransistor output, rated for VCEO 70 V and collector current up to 50 mA.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package DIP-4
Category Optocoupler
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward voltage VF 1.25 1.6 V IF = 50 mA 3
Collector emitter voltage VCEO 70 V IC = 1 mA 3
Emitter collector voltage VECO 7 V IE = 100 μA 3
Collector emitter cut-off current ICEO 10 100 nA VCE = 20 V, IF = 0 A, E = 0 3
Collector emitter saturation voltage VCEsat 0.3 V IF = 10 mA, IC = 1 mA 3
Current transfer ratio CTR 34 70 % VCE = 5 V, IF = 1 mA 3
Current transfer ratio CTR 100 200 % VCE = 5 V, IF = 10 mA 3
Reverse voltage VR 6 V Tamb = 25 °C 2
Forward current IF 60 mA Tamb = 25 °C 2
Forward surge current IFSM 1.5 A tp ≤ 10 μs 2
Collector emitter voltage VCEO 70 V Tamb = 25 °C 2
Emitter collector voltage VECO 7 V Tamb = 25 °C 2
Collector current IC 50 mA Tamb = 25 °C 2
Collector peak current ICM 100 mA tp/T = 0.5, tp ≤ 10 ms 2
Isolation test voltage (RMS) VISO 5000 VRMS t = 1 min 2
Operating ambient temperature range Tamb -40 100 °C 2
Storage temperature range Tstg -55 125 °C 2
Soldering temperature Tsld 260 °C 2 mm from case, ≤ 10 s 2
LED power dissipation Pdiss 100 mW 2
Output power dissipation Pdiss 150 mW 2
Maximum LED junction temperature Tjmax 125 °C 2
Maximum output die junction temperature Tjmax 125 °C 2
Thermal resistance, junction emitter to board θEB 173 °C/W 2
Thermal resistance, junction emitter to case θEC 149 °C/W 2
Thermal resistance, junction detector to board θDB 111 °C/W 2
Thermal resistance, junction detector to case θDC 127 °C/W 2
Thermal resistance, junction emitter to junction detector θED 173 °C/W 2
Thermal resistance, board to ambient θBA 197 °C/W For 2 layer FR4 board (4" x 3" x 0.062") 2
Thermal resistance, case to ambient θCA 4041 °C/W For 2 layer FR4 board (4" x 3" x 0.062") 2
Safety forward current IF 130 mA Maximum safety rating 4
Safety power dissipation Pdiss 265 mW Maximum safety rating 4
Rated impulse voltage VIOTM 6 kV Maximum safety rating 4
Safety temperature Tsi 150 °C Maximum safety rating 4
Partial discharge test voltage - routine test Vpd 1.6 kV 100 %, ttest = 1 s 4
Partial discharge test voltage - lot test Vpd 1.3 kV tTr = 60 s, ttest = 10 s, (see figure 2) 4
Junction capacitance Cj 50 pF VR = 0, f = 1 MHz 3
Cut-off frequency fc 110 kHz VCE = 5 V, IF = 10 mA, RL = 100 Ω 3
Coupling capacitance Ck 0.3 pF f = 1 MHz 3
Delay time td 3 μs VS = 5 V, IC = 2 mA, RL = 100 Ω, (see Fig. 3) 5
Rise time tr 3 μs VS = 5 V, IC = 2 mA, RL = 100 Ω, (see Fig. 3) 5
Turn-on time ton 6 μs VS = 5 V, IC = 2 mA, RL = 100 Ω, (see Fig. 3) 5
Storage time ts 0.3 μs VS = 5 V, IC = 2 mA, RL = 100 Ω, (see Fig. 3) 5
Fall time tf 4.7 μs VS = 5 V, IC = 2 mA, RL = 100 Ω, (see Fig. 3) 5
Turn-off time toff 5 μs VS = 5 V, IC = 2 mA, RL = 100 Ω, (see Fig. 3) 5
Turn-on time ton 9 μs VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see Fig. 4) 5
Turn-off time toff 10 μs VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see Fig. 4) 5

CAD (KiCad official)

  • Symbol: TCET1103
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: tcet1103-etched.step / tcet1103-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tcet1103.step / tcet1103.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 91bf2466853e900e, retrieved 2026-10-24, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF