component
TCDT1103G
Public Made by Adomby adom
Vishay Intertech Transistor, Photovoltaic Output Optoisolators, DIP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTCDT1103G
Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · DIP-6
TCDT1103G from Vishay Intertech, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Anode of the gallium arsenide infrared-emitting diode; the diode is rated for a maximum forward current of 60 mA and a maximum reverse voltage of 5 V. |
| 2 | C | passive | Cathode of the gallium arsenide infrared-emitting diode, the return path for the input LED current (forward current limit 60 mA, forward surge current 3 A for tp ≤ 10 µs). |
| 3 | NC | unconnected | Not connected; no internal connection is made to this pin. |
| 4 | E | passive | Emitter of the phototransistor; the emitter-collector voltage VECO is rated at 7 V maximum. |
| 5 | C | passive | Collector of the phototransistor; the collector-emitter voltage VCEO is rated at 32 V maximum and the collector current IC at 50 mA maximum. |
| 6 | NC | unconnected | Not connected; the phototransistor base is intentionally left unconnected to provide noise immunity. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DIP-6 |
| Category | Optoisolators |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse voltage | VR | 5 | V | 2 | |||
| Forward current | IF | 60 | mA | 2 | |||
| Forward surge current | IFSM | 3 | A | tp ≤ 10 µs | 2 | ||
| Power dissipation (input) | Pdiss | 70 | mW | 2 | |||
| Junction temperature (input) | Tj | 125 | °C | 2 | |||
| Collector emitter voltage | VCEO | 32 | V | 2 | |||
| Emitter collector voltage | VECO | 7 | V | 2 | |||
| Collector current | IC | 50 | mA | 2 | |||
| Collector peak current | ICM | 100 | mA | tp/T = 0.5, tp ≤ 10 ms | 2 | ||
| Power dissipation (output) | Pdiss | 70 | mW | 2 | |||
| Junction temperature (output) | Tj | 125 | °C | 2 | |||
| Isolation test voltage (RMS) | VISO | 5000 | VRMS | 2 | |||
| Total power dissipation | Ptot | 200 | mW | 2 | |||
| Ambient temperature range | Tamb | -55 | 110 | °C | 2 | ||
| Storage temperature range | Tstg | -55 | 125 | °C | 2 | ||
| Soldering temperature | Tsld | 260 | °C | 2 mm from case, t ≤ 10 s | 2 | ||
| Forward current (safety rating) | IF | 130 | mA | 3 | |||
| Power dissipation (safety rating) | Pdiss | 265 | mW | 3 | |||
| Rated impulse voltage | VIOTM | 6 | kV | 3 | |||
| Safety temperature | Tsi | 150 | °C | 3 | |||
| Partial discharge test voltage (routine test) | Vpd | 1.6 | kV | routine test 100 %, ttest = 1 s | 3 | ||
| Partial discharge test voltage (lot test, sample test) | Vpd | 1.3 | kV | lot test (sample test), tTr = 60 s, ttest = 10 s | 3 | ||
| Rated impulse voltage (lot test) | VIOTM | 6 | kV | lot test (sample test), tTr = 60 s, ttest = 10 s | 3 | ||
| Current transfer ratio | CTR | 100 | 200 | % | VCE = 5 V, IF = 10 mA | 3 | |
| Forward voltage | VF | 1.25 | 1.6 | V | IF = 50 mA | 2 | |
| Collector emitter voltage | VCEO | 32 | V | IC = 1 mA | 2 | ||
| Emitter collector voltage | VECO | 7 | V | IE = 100 µA | 2 | ||
| Collector emitter cut-off current | ICEO | 200 | nA | VCE = 20 V, IF = 0, E = 0 | 2 | ||
| Collector emitter saturation voltage | VCEsat | 0.3 | V | IF = 10 mA, IC = 1 mA | 2 | ||
| Junction capacitance | Cj | 50 | pF | VR = 0, f = 1 MHz | 2 | ||
| Cut-off frequency | fc | 110 | kHz | VCE = 5 V, IF = 10 mA, RL = 100 Ω | 2 | ||
| Coupling capacitance | Ck | 0.6 | pF | f = 1 MHz | 2 | ||
| Delay time | td | 4 | µs | VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) | 4 | ||
| Rise time | tr | 7 | µs | VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) | 4 | ||
| Fall time | tf | 6.7 | µs | VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) | 4 | ||
| Storage time | ts | 0.3 | µs | VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) | 4 | ||
| Turn-on time | ton | 11 | µs | VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) | 4 | ||
| Turn-off time | toff | 7 | µs | VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) | 4 | ||
| Turn-on time | ton | 25 | µs | VS = 5 V, IC = 10 mA, RL = 1 kΩ, (see figure 3) | 4 | ||
| Turn-off time | toff | 42.5 | µs | VS = 5 V, IC = 10 mA, RL = 1 kΩ, (see figure 3) | 4 |
CAD (KiCad official)
- Symbol:
TCDT1103G - Footprint:
Package_DIP:DIP-6_W7.62mm - 3D model: DIP-6 (KiCad packages3D, STEP)
- 3D model files:
tcdt1103g-etched.step/tcdt1103g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tcdt1103g.step/tcdt1103g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (6 pp, sha256
b784893da64ece81, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).