component
TCDT1102G
Public Made by Adomby adom
Vishay Intertech Transistor, Photovoltaic Output Optoisolators, DIP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
| tcdt1102g-etched.glb | 8d ago |
| tcdt1102g-etched.step | 8d ago |
| tcdt1102g-hero.glb | 8d ago |
| tcdt1102g-hero.overlay.json | 8d ago |
| tcdt1102g.glb | 8d ago |
| tcdt1102g.kicad_mod | 8d ago |
| tcdt1102g.kicad_sym | 8d ago |
| tcdt1102g.lbr | 8d ago |
| tcdt1102g.step | 8d ago |
TCDT1102G
Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · DIP-6
TCDT1102G from Vishay Intertech, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A(+) | passive | Anode of the gallium arsenide infrared-emitting diode; the absolute maximum forward current is 60 mA and the reverse voltage is 5 V. |
| 2 | C(-) | passive | Cathode of the infrared-emitting diode; the reverse voltage rating is 5 V maximum. |
| 3 | NC | unconnected | No connection. |
| 4 | E | passive | Emitter of the phototransistor; the emitter-collector voltage VECO is 7 V maximum. |
| 5 | C | passive | Collector of the phototransistor; the collector-emitter voltage VCEO is 32 V maximum and the collector current IC is 50 mA maximum. |
| 6 | NC | unconnected | No connection; the phototransistor base is not connected, which provides noise immunity. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DIP-6 |
| Category | Optoisolators |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Current transfer ratio (TCDT1102G, 400 mil) | CTR | 63 | 125 | % | VCE = 5 V, IF = 10 mA | 3 | |
| Forward voltage | VF | 1.25 | 1.6 | V | IF = 50 mA | 2 | |
| Reverse voltage (input) | VR | 5 | V | 2 | |||
| Forward current (input) | IF | 60 | mA | 2 | |||
| Forward surge current | IFSM | 3 | A | tp ≤ 10 µs | 2 | ||
| Power dissipation (input) | Pdiss | 70 | mW | 2 | |||
| Junction temperature (input) | Tj | 125 | °C | 2 | |||
| Collector emitter voltage (output) | VCEO | 32 | V | 2 | |||
| Emitter collector voltage (output) | VECO | 7 | V | 2 | |||
| Collector current (output) | IC | 50 | mA | 2 | |||
| Collector peak current | ICM | 100 | mA | tp/T = 0.5, tp ≤ 10 ms | 2 | ||
| Power dissipation (output) | Pdiss | 70 | mW | 2 | |||
| Junction temperature (output) | Tj | 125 | °C | 2 | |||
| Isolation test voltage (RMS) | VISO | 5000 | VRMS | 2 | |||
| Total power dissipation | Ptot | 200 | mW | 2 | |||
| Ambient temperature range | Tamb | -55 | 110 | °C | 2 | ||
| Storage temperature range | Tstg | -55 | 125 | °C | 2 | ||
| Soldering temperature | Tsld | 260 | °C | 2 mm from case, t ≤ 10 s | 2 |
CAD (KiCad official)
- Symbol:
TCDT1102G - Footprint:
Package_DIP:DIP-6_W7.62mm - 3D model: DIP-6 (KiCad packages3D, STEP)
- 3D model files:
tcdt1102g-etched.step/tcdt1102g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tcdt1102g.step/tcdt1102g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (6 pp, sha256
aff4ac7cd9dc72d7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).