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README

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TCAN1042HDRBRQ1

Texas Instruments · Pre-ordered Chips · SOIC-8

TCAN1042HDRBRQ1 from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 TXD input CAN transmit data input, LOW for dominant and HIGH for recessive bus states.
2 GND power_in Ground connection; on the DRB (VSON) package the thermal pad may be connected to GND to optimize thermal characteristics.
3 VCC power_in Transceiver 5-V supply voltage, operating range 4.5 V to 5.5 V.
4 RXD output CAN receive data output, LOW for dominant and HIGH for recessive bus states, driven to VCC on devices without the V suffix.
5 NC unconnected No connect on the base/H/G/HG devices; not internally connected and may be left floating or tied to any existing net.
6 CANL bidirectional Low level CAN bus input/output line; bus fault protection is ±70 V on H devices.
7 CANH bidirectional High level CAN bus input/output line; bus fault protection is ±70 V on H devices.
8 STB input Standby mode control input, active high.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOIC-8
Category Interface ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
5-V bus supply voltage VCC -0.3 7 V 6
CAN bus I/O voltage (CANH, CANL), H suffix VBUS -70 70 V Devices with the H suffix 6
Max differential voltage CANH-CANL, H suffix V(Diff) -70 70 V Devices with the H suffix 6
Logic input terminal voltage (TXD, STB) V(Logic_Input) -0.3 7 V max 7 and VI ≤ VIO + 0.3 6
Logic output terminal voltage (RXD) V(Logic_Output) -0.3 7 V max 7 and VI ≤ VIO + 0.3 6
RXD output current IO(RXD) -8 8 mA 6
Virtual junction temperature TJ -55 150 °C 6
Storage temperature TSTG -65 150 °C 6
ESD HBM, all pins VESD -6000 6000 V HBM classification level 3A, AEC Q100-002 6
ESD HBM, CANH and CANL to GND VESD -16000 16000 V HBM classification level 3B 6
ESD CDM, all pins VESD -1500 1500 V CDM classification level C6, AEC Q100-011 6
5-V bus supply voltage range VCC 4.5 5.5 V 8
RXD high level output current IOH(RXD) -2 mA 8
RXD low level output current IOL(RXD) 2 mA 8
Junction-to-air thermal resistance, DRB (VSON) RθJA 48.3 °C/W High-K thermal resistance 8
Junction-to-board thermal resistance, DRB RθJB 17.2 °C/W 8
Junction-to-case (top) thermal resistance, DRB RθJC(TOP) 37.6 °C/W 8
Thermal shutdown temperature TTSD 170 °C 8
Thermal shutdown hysteresis TTSD_HYS 5 °C 8
5-V supply current, normal mode dominant, typical bus load ICC 40 70 mA TXD = 0 V, RL = 60 Ω, CL = open, RCM = open, STB = 0 V 9
5-V supply current, normal mode dominant, high bus load ICC 45 80 mA TXD = 0 V, RL = 50 Ω, CL = open, RCM = open, STB = 0 V 9
5-V supply current, dominant with bus fault ICC 110 mA TXD = 0 V, STB = 0 V, CANH = -12 V, RL = open, CL = open, RCM = open 9
5-V supply current, normal mode recessive ICC 1.5 2.5 mA TXD = VCC or VIO, RL = 50 Ω, CL = open, RCM = open, STB = 0 V 9
5-V supply current, standby mode (non-V) ICC 22 µA TXD = VCC, RL = 50 Ω, CL = open, RCM = open, STB = VCC 9
Rising undervoltage detection on VCC UVVCC 4.2 4.4 V All devices, protected mode 9
Falling undervoltage detection on VCC UVVCC 3.8 4 4.25 V protected mode 9
Hysteresis voltage on UVVCC VHYS(UVVCC) 200 mV 9
STB high-level input voltage (5-V only) VIH 2 V Devices without the V suffix 9
STB low-level input voltage (5-V only) VIL 0.8 V Devices without the V suffix 9
STB high-level input leakage current IIH -2 2 µA STB = VCC = VIO = 5.5 V 9
STB low-level input leakage current IIL -20 0 -2 µA STB = 0V, VCC = VIO = 5.5 V 9
STB unpowered leakage current Ilkg(OFF) -1 0 1 µA STB = 5.5 V, VCC = VIO = 0 V 9
TXD high-level input voltage (5-V only) VIH 2 V Devices without the V suffix 9
TXD low-level input voltage (5-V only) VIL 0.8 V Devices without the V suffix 9
TXD high-level input leakage current IIH -2.5 0 1 µA TXD = VCC = VIO = 5.5 V 9
TXD low-level input leakage current IIL -100 -25 -7 µA TXD = 0 V, VCC = VIO = 5.5 V 9
TXD unpowered leakage current Ilkg(OFF) -1 0 1 µA TXD = 5.5 V, VCC = VIO = 0 V 9
TXD input capacitance CI 5 pF VIN = 0.4 x sin(2 x π x 2 x 10^6 x t) + 2.5 V 9
RXD high-level output voltage (5-V only) VOH 4 4.6 V Devices without the V suffix, IO = -2 mA 10
RXD low-level output voltage (5-V only) VOL 0.2 0.4 V Devices without the V suffix, IO = +2 mA 10
RXD unpowered leakage current Ilkg(OFF) -1 0 1 µA RXD = 5.5 V, VCC = 0 V, VIO = 0 V 10
Bus output voltage dominant, CANH VO(DOM) 2.75 4.5 V TXD = 0 V, STB = 0 V, 50 Ω ≤ RL ≤ 65 Ω, CL = open, RCM = open 10
Bus output voltage dominant, CANL VO(DOM) 0.5 2.25 V TXD = 0 V, STB = 0 V, 50 Ω ≤ RL ≤ 65 Ω, CL = open, RCM = open 10
Bus output voltage recessive, CANH and CANL VO(REC) 2 3 V TXD = VCC or VIO, VIO = VCC, STB = 0 V, RL = open, RCM = open; typ printed as 0.5 × VCC 10
Bus output voltage standby, CANH-CANL VO(STB) -0.2 0 0.2 V STB = VIO, RL = open (no load), RCM = open 10
Differential output voltage dominant, 45 Ω ≤ RL < 50 Ω VOD(DOM) 1.4 3 V TXD = 0 V, STB = 0 V, CL = open, RCM = open 10
Differential output voltage dominant, 50 Ω ≤ RL ≤ 65 Ω VOD(DOM) 1.5 3 V TXD = 0 V, STB = 0 V, CL = open, RCM = open 10
Differential output voltage dominant, RL = 2240 Ω VOD(DOM) 1.5 5 V TXD = 0 V, STB = 0 V, CL = open, RCM = open 10
Differential output voltage recessive, RL = 60 Ω VOD(REC) -120 12 mV TXD = VCC, STB = 0 V, RL = 60 Ω, CL = open, RCM = open 10
Differential output voltage recessive, no load VOD(REC) -50 50 mV TXD = VCC, STB = 0 V, RL = open (no load), CL = open, RCM = open 10
Output symmetry VSYM 0.9 1.1 V/V STB at 0 V, Rterm = 60 Ω, Csplit = 4.7 nF, CL = open, RCM = open, TXD = 250 kHz, 1 MHz 10
DC output symmetry VSYM_DC -0.4 0.4 V STB = 0 V, RL = 60 Ω, CL = open, RCM = open 10
Short-circuit steady-state output current, dominant (CANH) IOS(SS_DOM) -100 mA STB at 0 V, VCANH = -5 V to 40 V, CANL = open, TXD = 0 V 10
Short-circuit steady-state output current, dominant (CANL) IOS(SS_DOM) 100 mA STB at 0 V, VCANL = -5 V to 40 V, CANH = open, TXD = 0 V 10
Short-circuit steady-state output current, recessive IOS(SS_REC) -5 5 mA STB at 0 V, -27 V ≤ VBUS ≤ 32 V, VBUS = CANH = CANL, TXD = VCC 10
Common mode range, normal mode VCM -30 30 V STB = 0 V 11
Positive-going input threshold, normal mode VIT+ 900 mV STB = 0 V, -20 V ≤ VCM ≤ +20 V 11
Negative-going input threshold, normal mode VIT- 500 mV STB = 0 V, -20 V ≤ VCM ≤ +20 V 11
Input threshold, standby mode VIT(STANDBY) 400 1150 mV STB = VCC or VIO 11
Input resistance (CANH or CANL) RIN 15 40 kΩ TXD = VCC = VIO = 5 V, STB = 0 V, -30 V ≤ VCM ≤ +30 V 11
Differential input resistance RID 30 80 kΩ TXD = VCC = VIO = 5 V, STB = 0 V, -30 V ≤ VCM ≤ +30 V 11
Total loop delay, recessive to dominant tPROP(LOOP1) 100 160 ns STB = 0 V, RL = 60 Ω, CL = 100 pF, CL(RXD) = 15 pF 12
Total loop delay, dominant to recessive tPROP(LOOP2) 110 175 ns STB = 0 V, RL = 60 Ω, CL = 100 pF, CL(RXD) = 15 pF 12

CAD (KiCad official)

  • Symbol: TCAN1042HDRBRQ1
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: tcan1042hdrbrq1-etched.step / tcan1042hdrbrq1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tcan1042hdrbrq1.step / tcan1042hdrbrq1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (41 pp, sha256 3b66c68542cea6ea, retrieved 2026-10-31, tier: manufacturer)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF