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TC7SZ32FE

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TOSHIBA Gates, SOT-553. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TC7SZ32FE

TOSHIBA · Gates · SOT-553

TC7SZ32FE from TOSHIBA, in a SOT-553. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IN B input Gate input B; 5.5 V tolerant, and unused inputs must be tied to VCC or GND.
2 IN A input Gate input A; 5.5 V tolerant, and unused inputs must be tied to VCC or GND.
3 GND power_in Ground pin, 0 V reference for the device.
4 OUT Y output OR gate output Y with ±24 mA (min) drive at VCC = 3.0 V and 5.5 V power-down protection.
5 VCC power_in Supply voltage pin, operating range 1.65 to 5.5 V (absolute maximum -0.5 to 6.0 V).

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package SOT-553
Category Logic ICs
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VCC -0.5 6 V 2
Input voltage VIN -0.5 6 V 2
DC output voltage VOUT -0.5 6 V VCC = 0 V 2
DC output voltage VOUT -0.5 V High or Low state, max VCC + 0.5 2
Input diode current IIK -20 mA 2
Output diode current IOK -20 mA VOUT < GND 2
DC output current IOUT -50 50 mA 2
VCC/ground current ICC -50 50 mA 2
Power dissipation PD 150 mW 2
Storage temperature Tstg -65 150 °C 2
Supply voltage VCC 1.65 5.5 V 1.5 to 5.5 V for data retention only 3
Input voltage VIN 0 5.5 V 3
Output voltage VOUT 0 5.5 V VCC = 0 V 3
Output voltage VOUT 0 V High or Low state, max VCC 3
Operating temperature Topr -40 85 °C devices except those ending in J(CT 3
Input rise and fall time dt/dv 0 20 ns/V VCC = 1.8 ± 0.15 V, 2.5 ± 0.2 V 3
Input rise and fall time dt/dv 0 10 ns/V VCC = 3.3 ± 0.3 V 3
Input rise and fall time dt/dv 0 5 ns/V VCC = 5.0 ± 0.5 V 3
High-level output voltage VOH 1.55 1.65 V Ta = 25 °C, VIN = VIH or VIL, IOH = -100 µA, VCC = 1.65 V 3
High-level output voltage VOH 2.2 2.3 V Ta = 25 °C, VIN = VIH or VIL, IOH = -100 µA, VCC = 2.3 V 3
High-level output voltage VOH 2.9 3 V Ta = 25 °C, VIN = VIH or VIL, IOH = -100 µA, VCC = 3.0 V 3
High-level output voltage VOH 4.4 4.5 V Ta = 25 °C, VIN = VIH or VIL, IOH = -100 µA, VCC = 4.5 V 3
High-level output voltage VOH 1.29 1.52 V Ta = 25 °C, VIN = VIH or VIL, IOH = -4 mA, VCC = 1.65 V 3
High-level output voltage VOH 1.9 2.15 V Ta = 25 °C, VIN = VIH or VIL, IOH = -8 mA, VCC = 2.3 V 3
High-level output voltage VOH 2.4 2.8 V Ta = 25 °C, VIN = VIH or VIL, IOH = -16 mA, VCC = 3.0 V 3
High-level output voltage VOH 2.3 2.68 V Ta = 25 °C, VIN = VIH or VIL, IOH = -24 mA, VCC = 3.0 V 3
High-level output voltage VOH 3.8 4.2 V Ta = 25 °C, VIN = VIH or VIL, IOH = -32 mA, VCC = 4.5 V 3
Low-level output voltage VOL 0 0.1 V Ta = 25 °C, VIN = VIL, IOL = 100 µA, VCC = 1.65 to 4.5 V 3
Low-level output voltage VOL 0.08 0.24 V Ta = 25 °C, VIN = VIL, IOL = 4 mA, VCC = 1.65 V 3
Low-level output voltage VOL 0.1 0.3 V Ta = 25 °C, VIN = VIL, IOL = 8 mA, VCC = 2.3 V 3
Low-level output voltage VOL 0.15 0.4 V Ta = 25 °C, VIN = VIL, IOL = 16 mA, VCC = 3.0 V 3
Low-level output voltage VOL 0.22 0.55 V Ta = 25 °C, VIN = VIL, IOL = 24 mA, VCC = 3.0 V 3
Input leakage current IIN -1 1 µA Ta = 25 °C, VIN = 5.5 V or GND, VCC = 0 to 5.5 V 3
Power-OFF leakage current IOFF 1 µA Ta = 25 °C, VIN or VOUT = 5.5 V, VCC = 0 V 3
Quiescent supply current ICC 2 µA Ta = 25 °C, VIN = VCC or GND, VCC = 1.65 to 5.5 V 3
High-level output voltage VOH 1.55 V Ta = -40 to 85 °C, VIN = VIH or VIL, IOH = -100 µA, VCC = 1.65 V 4
High-level output voltage VOH 2.2 V Ta = -40 to 85 °C, VIN = VIH or VIL, IOH = -100 µA, VCC = 2.3 V 4
High-level output voltage VOH 2.9 V Ta = -40 to 85 °C, VIN = VIH or VIL, IOH = -100 µA, VCC = 3.0 V 4
High-level output voltage VOH 4.4 V Ta = -40 to 85 °C, VIN = VIH or VIL, IOH = -100 µA, VCC = 4.5 V 4
High-level output voltage VOH 1.29 V Ta = -40 to 85 °C, VIN = VIH or VIL, IOH = -4 mA, VCC = 1.65 V 4
High-level output voltage VOH 1.9 V Ta = -40 to 85 °C, VIN = VIH or VIL, IOH = -8 mA, VCC = 2.3 V 4
High-level output voltage VOH 2.4 V Ta = -40 to 85 °C, VIN = VIH or VIL, IOH = -16 mA, VCC = 3.0 V 4
High-level output voltage VOH 2.3 V Ta = -40 to 85 °C, VIN = VIH or VIL, IOH = -24 mA, VCC = 3.0 V 4
High-level output voltage VOH 3.8 V Ta = -40 to 85 °C, VIN = VIH or VIL, IOH = -32 mA, VCC = 4.5 V 4
Low-level output voltage VOL 0.1 V Ta = -40 to 85 °C, VIN = VIL, IOL = 100 µA, VCC = 1.65 to 4.5 V 4
Low-level output voltage VOL 0.24 V Ta = -40 to 85 °C, VIN = VIL, IOL = 4 mA, VCC = 1.65 V 4
Low-level output voltage VOL 0.3 V Ta = -40 to 85 °C, VIN = VIL, IOL = 8 mA, VCC = 2.3 V 4
Low-level output voltage VOL 0.4 V Ta = -40 to 85 °C, VIN = VIL, IOL = 16 mA, VCC = 3.0 V 4
Low-level output voltage VOL 0.55 V Ta = -40 to 85 °C, VIN = VIL, IOL = 24 mA, VCC = 3.0 V 4
Input leakage current IIN -10 10 µA Ta = -40 to 85 °C, VIN = 5.5 V or GND, VCC = 0 to 5.5 V 4
Power-OFF leakage current IOFF 10 µA Ta = -40 to 85 °C, VIN or VOUT = 5.5 V, VCC = 0 V 4
Quiescent supply current ICC 20 µA Ta = -40 to 85 °C, VIN = VCC or GND, VCC = 1.65 to 5.5 V 4
Propagation delay time tPLH, tPHL 2 4.6 9.5 ns Ta = 25 °C, VCC = 1.8 ± 0.15 V, RL = 1 MΩ, CL = 15 pF 6
Propagation delay time tPLH, tPHL 0.8 3 6.5 ns Ta = 25 °C, VCC = 2.5 ± 0.2 V, RL = 1 MΩ, CL = 15 pF 6
Propagation delay time tPLH, tPHL 0.5 2.4 4.5 ns Ta = 25 °C, VCC = 3.3 ± 0.3 V, RL = 1 MΩ, CL = 15 pF 6
Propagation delay time tPLH, tPHL 0.5 1.9 3.9 ns Ta = 25 °C, VCC = 5.0 ± 0.5 V, RL = 1 MΩ, CL = 15 pF 6
Propagation delay time tPLH, tPHL 1.5 3 5 ns Ta = 25 °C, VCC = 3.3 ± 0.3 V, RL = 500 Ω, CL = 50 pF 6
Propagation delay time tPLH, tPHL 0.8 2.44 4.3 ns Ta = 25 °C, VCC = 5.0 ± 0.5 V, RL = 500 Ω, CL = 50 pF 6
Propagation delay time tPLH, tPHL 2 10 ns Ta = -40 to 85 °C, VCC = 1.8 ± 0.15 V, RL = 1 MΩ, CL = 15 pF 6
Propagation delay time tPLH, tPHL 0.8 7 ns Ta = -40 to 85 °C, VCC = 2.5 ± 0.2 V, RL = 1 MΩ, CL = 15 pF 6
Propagation delay time tPLH, tPHL 0.5 4.7 ns Ta = -40 to 85 °C, VCC = 3.3 ± 0.3 V, RL = 1 MΩ, CL = 15 pF 6
Propagation delay time tPLH, tPHL 0.5 4.1 ns Ta = -40 to 85 °C, VCC = 5.0 ± 0.5 V, RL = 1 MΩ, CL = 15 pF 6
Propagation delay time tPLH, tPHL 1.5 5.2 ns Ta = -40 to 85 °C, VCC = 3.3 ± 0.3 V, RL = 500 Ω, CL = 50 pF 6
Propagation delay time tPLH, tPHL 0.8 4.5 ns Ta = -40 to 85 °C, VCC = 5.0 ± 0.5 V, RL = 500 Ω, CL = 50 pF 6
Power dissipation capacitance CPD 18 pF Ta = 25 °C, VCC = 3.3 V 6
Power dissipation capacitance CPD 24 pF Ta = 25 °C, VCC = 5.5 V 6

CAD (KiCad official)

  • Symbol: TC7SZ32FE
  • Footprint: Package_TO_SOT_SMD:SOT-553
  • 3D model: SOT-553 (KiCad packages3D, STEP)
  • 3D model files: tc7sz32fe-etched.step / tc7sz32fe-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tc7sz32fe.step / tc7sz32fe.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (8 pp, sha256 b8818a4c5d516e24, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF