TC6320TG-G

{
  "slug": "tc6320tg-g",
  "version": "0.1.0",
  "type": "component",
  "description": "Microchip Tech MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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  "component": {
    "mpn": "TC6320TG-G",
    "manufacturer": "Microchip Tech",
    "package": "SOIC-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588914730261467136",
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      "lbr": "tc6320tg-g.lbr"
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    "distributor_links": {
      "lcsc": "C624992"
    },
    "distributor_check": {
      "checked_at": "2026-10-18T22:06:08Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
      },
      "mouser": {
        "pn": null,
        "status": "quota"
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    },
    "pins": [
      {
        "number": "1",
        "name": "SN",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; the N-channel device is rated for a drain-to-source breakdown voltage (BVDSS) of 200 V minimum."
      },
      {
        "number": "2",
        "name": "GN",
        "type": "input",
        "description": "Gate of the N-channel MOSFET, with an integrated gate-to-source shunt resistor of 10 to 50 kΩ and a gate-to-source Zener clamp of 13.2 to 25 V."
      },
      {
        "number": "3",
        "name": "SP",
        "type": "passive",
        "description": "Source terminal of the P-channel MOSFET; the P-channel device is rated for a drain-to-source breakdown voltage (BVDSS) of -200 V minimum."
      },
      {
        "number": "4",
        "name": "GP",
        "type": "input",
        "description": "Gate of the P-channel MOSFET, with an integrated gate-to-source shunt resistor of 10 to 50 kΩ and a gate-to-source Zener clamp of 13.2 to 25 V."
      },
      {
        "number": "5",
        "name": "DP",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET; the datasheet lists DP on both pin 5 and pin 6, and the P-channel BVDSS is -200 V minimum."
      },
      {
        "number": "6",
        "name": "DP",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET; the datasheet lists DP on both pin 5 and pin 6, and the P-channel BVDSS is -200 V minimum."
      },
      {
        "number": "7",
        "name": "DN",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET; the datasheet lists DN on both pin 7 and pin 8, and the N-channel BVDSS is 200 V minimum."
      },
      {
        "number": "8",
        "name": "DN",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET; the datasheet lists DN on both pin 7 and pin 8, and the N-channel BVDSS is 200 V minimum."
      }
    ],
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        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet gives pin names and functions but does not classify pin electrical types. Types were a; Pins 5 and 6 are both DP and pins 7 and 8 are both DN in Table 2-2. The datasheet does not say wheth; The DFN-8 pinout (Table 2-1) differs from SOIC: pins 3 and 4 are GP and SP in DFN but SP and GP in S"
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        "at": "2026-10-18T22:05:19"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
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