component
TC2320TG-G
Public Made by Adomby adom
Microchip Tech MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TC2320TG-G
Microchip Tech · MOSFETs · SOIC-8
TC2320TG-G from Microchip Tech, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SN | passive | Source of the N-channel MOSFET; the datasheet gives no separate pin-level limit, so the device Absolute Maximum Ratings apply (Gate-to-Source ±20 V, storage and operating ambient −55°C to +150°C). |
| 2 | GN | input | Gate of the N-channel MOSFET; gate-to-source voltage is limited to ±20 V per the Absolute Maximum Ratings. |
| 3 | SP | passive | Source of the P-channel MOSFET; the datasheet gives no separate pin-level limit, so the device Absolute Maximum Ratings apply (Gate-to-Source ±20 V, storage and operating ambient −55°C to +150°C). |
| 4 | GP | input | Gate of the P-channel MOSFET; gate-to-source voltage is limited to ±20 V per the Absolute Maximum Ratings. |
| 5 | DP | passive | Drain of the P-channel MOSFET; P-channel drain-to-source breakdown voltage is −200 V minimum (BVDSS, VGS = 0 V, ID = −2 mA). |
| 6 | DP | passive | Drain of the P-channel MOSFET (second pin, internally the same drain as pin 5); P-channel drain-to-source breakdown voltage is −200 V minimum (BVDSS, VGS = 0 V, ID = −2 mA). |
| 7 | DN | passive | Drain of the N-channel MOSFET; N-channel drain-to-source breakdown voltage is 200 V minimum (BVDSS, VGS = 0 V, ID = 100 µA). |
| 8 | DN | passive | Drain of the N-channel MOSFET (second pin, internally the same drain as pin 7); N-channel drain-to-source breakdown voltage is 200 V minimum (BVDSS, VGS = 0 V, ID = 100 µA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Microchip Tech |
| Package | SOIC-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-to-Source Breakdown Voltage | BVDSS | 200 | V | VGS = 0V, ID = 100 µA | 2 | ||
| N-ch Gate Threshold Voltage | VGS(th) | 0.6 | 2 | V | VGS = VDS, ID = 1 mA | 2 | |
| N-ch Change in VGS(th) with Temperature | ΔVGS(th) | -4.5 | mV/°C | VGS = VDS, ID = 1 mA (Note 2) | 2 | ||
| N-ch Gate Body Leakage Current | IGSS | 100 | nA | VGS = ±20V, VDS = 0V | 2 | ||
| N-ch Zero-Gate Voltage Drain Current (VDS = 100V) | IDSS | 1 | µA | VGS = 0V, VDS = 100V | 2 | ||
| N-ch Zero-Gate Voltage Drain Current (VDS = maximum rating) | IDSS | 10 | µA | VGS = 0V, VDS = Maximum rating | 2 | ||
| N-ch Zero-Gate Voltage Drain Current (TA = 125°C) | IDSS | 1 | mA | VGS = 0V, TA = 125°C, VDS = 0.8 Maximum rating (Note 2) | 2 | ||
| N-ch On-State Drain Current (VGS = 4.5V) | ID(ON) | 0.6 | A | VGS = 4.5V, VDS = 25V | 2 | ||
| N-ch On-State Drain Current (VGS = 10V) | ID(ON) | 1.2 | A | VGS = 10V, VDS = 25V | 2 | ||
| N-ch Static Drain-to-Source On-State Resistance (VGS = 4.5V) | RDS(ON) | 8 | Ω | VGS = 4.5V, ID = 150 mA | 2 | ||
| N-ch Static Drain-to-Source On-State Resistance (VGS = 10V) | RDS(ON) | 7 | Ω | VGS = 10V, ID = 1A | 2 | ||
| N-ch Change in RDS(ON) with Temperature | ΔRDS(ON) | 1 | %/°C | VGS = 4.5V, ID = 150 mA (Note 2) | 2 | ||
| N-ch Forward Transconductance | GFS | 150 | mmho | VDS = 25V, ID = 200 mA | 2 | ||
| N-ch Input Capacitance | CISS | 110 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | 2 | ||
| N-ch Common Source Output Capacitance | COSS | 60 | pF | 2 | |||
| N-ch Reverse Transfer Capacitance | CRSS | 23 | pF | 2 | |||
| N-ch Turn-On Delay Time | td(ON) | 20 | ns | VDD = 25V, ID = 150 mA, RGEN = 25Ω | 2 | ||
| N-ch Rise Time | tr | 15 | ns | 2 | |||
| N-ch Turn-Off Delay Time | td(OFF) | 25 | ns | 2 | |||
| N-ch Fall Time | tf | 25 | ns | 2 | |||
| N-ch Diode Forward Voltage Drop | VSD | 1.8 | V | VGS = 0V, ISD = 200 mA (Note 1) | 2 | ||
| P-ch Drain-to-Source Breakdown Voltage | BVDSS | -200 | V | VGS = 0V, ID = -2 mA | 3 | ||
| P-ch Gate Threshold Voltage | VGS(th) | -1 | -2.4 | V | VGS = VDS, ID = -1 mA | 3 | |
| P-ch Change in VGS(th) with Temperature | ΔVGS(th) | 4.5 | mV/°C | VGS = VDS, ID = -1 mA (Note 2) | 3 | ||
| P-ch Gate Body Leakage | IGSS | -100 | nA | VGS = ±20V, VDS = 0V | 3 | ||
| P-ch Zero-Gate Voltage Drain Current (VDS = maximum rating) | IDSS | -10 | µA | VGS = 0V, VDS = Maximum rating | 3 | ||
| P-ch Zero-Gate Voltage Drain Current (TA = 125°C) | IDSS | -1 | mA | VGS = 0V, TA = 125°C, VDS = 0.8 Maximum rating (Note 2) | 3 | ||
| P-ch On-State Drain Current (VGS = -4.5V) | ID(ON) | -0.25 | -0.7 | A | VGS = -4.5V, VDS = -25V | 3 | |
| P-ch On-State Drain Current (VGS = -10V) | ID(ON) | -0.75 | -2.1 | A | VGS = -10V, VDS = -25V | 3 | |
| P-ch Static Drain-to-Source On-State Resistance (VGS = -4.5V) | RDS(ON) | 10 | 15 | Ω | VGS = -4.5V, ID = -100 mA | 3 | |
| P-ch Static Drain-to-Source On-State Resistance (VGS = -10V) | RDS(ON) | 8 | 12 | Ω | VGS = -10V, ID = -200 mA | 3 | |
| P-ch Change in RDS(ON) with Temperature | ΔRDS(ON) | 1.7 | %/°C | VGS = -10V, ID = -200 mA (Note 2) | 3 | ||
| P-ch Forward Transconductance | GFS | 100 | 250 | mmho | VDS = -25V, ID = -200 mA | 3 | |
| P-ch Input Capacitance | CISS | 75 | 125 | pF | VGS = 0V, VDS = -25V, f = 1 MHz | 3 | |
| P-ch Common-Source Output Capacitance | COSS | 20 | 85 | pF | 3 | ||
| P-ch Reverse Transfer Capacitance | CRSS | 10 | 35 | pF | 3 | ||
| P-ch Turn-On Delay Time | td(ON) | 10 | ns | VDD = -25V, ID = -0.75A, RGEN = 25Ω | 3 | ||
| P-ch Rise Time | tr | 15 | ns | 3 | |||
| P-ch Turn-Off Delay Time | td(OFF) | 20 | ns | 3 | |||
| P-ch Fall Time | tf | 15 | ns | 3 | |||
| P-ch Diode Forward Voltage Drop | VSD | -1.8 | V | VGS = 0V, ISD = -0.5A (Note 1) | 3 | ||
| Gate-to-Source Voltage (absolute maximum) | -20 | 20 | V | 2 | |||
| Operating Ambient Temperature (absolute maximum) | TA | -55 | 150 | °C | 2 | ||
| Storage Temperature (absolute maximum) | TS | -55 | 150 | °C | 2 | ||
| Operating Ambient Temperature | TA | -55 | 150 | °C | 3 | ||
| Storage Temperature | TS | -55 | 150 | °C | 3 | ||
| Thermal resistance, junction-to-ambient, 8-lead SOIC | θJA | 101 | °C/W | Note 1: 1 oz., four-layer, 3” x 4” PCB | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Pin Number Pin Name Description 1 SN Source N-channel | 4 |
CAD (KiCad official)
- Symbol:
TC2320TG-G - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
tc2320tg-g-etched.step/tc2320tg-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tc2320tg-g.step/tc2320tg-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Microchip Tech datasheet (12 pp, sha256
5fb923c93eb3fe21, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TC2320TG-G
**Microchip Tech** · MOSFETs · SOIC-8
TC2320TG-G from Microchip Tech, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SN | passive | Source of the N-channel MOSFET; the datasheet gives no separate pin-level limit, so the device Absolute Maximum Ratings apply (Gate-to-Source ±20 V, storage and operating ambient −55°C to +150°C). |
| 2 | GN | input | Gate of the N-channel MOSFET; gate-to-source voltage is limited to ±20 V per the Absolute Maximum Ratings. |
| 3 | SP | passive | Source of the P-channel MOSFET; the datasheet gives no separate pin-level limit, so the device Absolute Maximum Ratings apply (Gate-to-Source ±20 V, storage and operating ambient −55°C to +150°C). |
| 4 | GP | input | Gate of the P-channel MOSFET; gate-to-source voltage is limited to ±20 V per the Absolute Maximum Ratings. |
| 5 | DP | passive | Drain of the P-channel MOSFET; P-channel drain-to-source breakdown voltage is −200 V minimum (BVDSS, VGS = 0 V, ID = −2 mA). |
| 6 | DP | passive | Drain of the P-channel MOSFET (second pin, internally the same drain as pin 5); P-channel drain-to-source breakdown voltage is −200 V minimum (BVDSS, VGS = 0 V, ID = −2 mA). |
| 7 | DN | passive | Drain of the N-channel MOSFET; N-channel drain-to-source breakdown voltage is 200 V minimum (BVDSS, VGS = 0 V, ID = 100 µA). |
| 8 | DN | passive | Drain of the N-channel MOSFET (second pin, internally the same drain as pin 7); N-channel drain-to-source breakdown voltage is 200 V minimum (BVDSS, VGS = 0 V, ID = 100 µA). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Microchip Tech |
| Package | SOIC-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-to-Source Breakdown Voltage | BVDSS | 200 | | | V | VGS = 0V, ID = 100 µA | 2 |
| N-ch Gate Threshold Voltage | VGS(th) | 0.6 | | 2 | V | VGS = VDS, ID = 1 mA | 2 |
| N-ch Change in VGS(th) with Temperature | ΔVGS(th) | | | -4.5 | mV/°C | VGS = VDS, ID = 1 mA (Note 2) | 2 |
| N-ch Gate Body Leakage Current | IGSS | | | 100 | nA | VGS = ±20V, VDS = 0V | 2 |
| N-ch Zero-Gate Voltage Drain Current (VDS = 100V) | IDSS | | | 1 | µA | VGS = 0V, VDS = 100V | 2 |
| N-ch Zero-Gate Voltage Drain Current (VDS = maximum rating) | IDSS | | | 10 | µA | VGS = 0V, VDS = Maximum rating | 2 |
| N-ch Zero-Gate Voltage Drain Current (TA = 125°C) | IDSS | | | 1 | mA | VGS = 0V, TA = 125°C, VDS = 0.8 Maximum rating (Note 2) | 2 |
| N-ch On-State Drain Current (VGS = 4.5V) | ID(ON) | 0.6 | | | A | VGS = 4.5V, VDS = 25V | 2 |
| N-ch On-State Drain Current (VGS = 10V) | ID(ON) | 1.2 | | | A | VGS = 10V, VDS = 25V | 2 |
| N-ch Static Drain-to-Source On-State Resistance (VGS = 4.5V) | RDS(ON) | | | 8 | Ω | VGS = 4.5V, ID = 150 mA | 2 |
| N-ch Static Drain-to-Source On-State Resistance (VGS = 10V) | RDS(ON) | | | 7 | Ω | VGS = 10V, ID = 1A | 2 |
| N-ch Change in RDS(ON) with Temperature | ΔRDS(ON) | | | 1 | %/°C | VGS = 4.5V, ID = 150 mA (Note 2) | 2 |
| N-ch Forward Transconductance | GFS | 150 | | | mmho | VDS = 25V, ID = 200 mA | 2 |
| N-ch Input Capacitance | CISS | | | 110 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | 2 |
| N-ch Common Source Output Capacitance | COSS | | | 60 | pF | | 2 |
| N-ch Reverse Transfer Capacitance | CRSS | | | 23 | pF | | 2 |
| N-ch Turn-On Delay Time | td(ON) | | | 20 | ns | VDD = 25V, ID = 150 mA, RGEN = 25Ω | 2 |
| N-ch Rise Time | tr | | | 15 | ns | | 2 |
| N-ch Turn-Off Delay Time | td(OFF) | | | 25 | ns | | 2 |
| N-ch Fall Time | tf | | | 25 | ns | | 2 |
| N-ch Diode Forward Voltage Drop | VSD | | | 1.8 | V | VGS = 0V, ISD = 200 mA (Note 1) | 2 |
| P-ch Drain-to-Source Breakdown Voltage | BVDSS | -200 | | | V | VGS = 0V, ID = -2 mA | 3 |
| P-ch Gate Threshold Voltage | VGS(th) | -1 | | -2.4 | V | VGS = VDS, ID = -1 mA | 3 |
| P-ch Change in VGS(th) with Temperature | ΔVGS(th) | | | 4.5 | mV/°C | VGS = VDS, ID = -1 mA (Note 2) | 3 |
| P-ch Gate Body Leakage | IGSS | | | -100 | nA | VGS = ±20V, VDS = 0V | 3 |
| P-ch Zero-Gate Voltage Drain Current (VDS = maximum rating) | IDSS | | | -10 | µA | VGS = 0V, VDS = Maximum rating | 3 |
| P-ch Zero-Gate Voltage Drain Current (TA = 125°C) | IDSS | | | -1 | mA | VGS = 0V, TA = 125°C, VDS = 0.8 Maximum rating (Note 2) | 3 |
| P-ch On-State Drain Current (VGS = -4.5V) | ID(ON) | -0.25 | -0.7 | | A | VGS = -4.5V, VDS = -25V | 3 |
| P-ch On-State Drain Current (VGS = -10V) | ID(ON) | -0.75 | -2.1 | | A | VGS = -10V, VDS = -25V | 3 |
| P-ch Static Drain-to-Source On-State Resistance (VGS = -4.5V) | RDS(ON) | | 10 | 15 | Ω | VGS = -4.5V, ID = -100 mA | 3 |
| P-ch Static Drain-to-Source On-State Resistance (VGS = -10V) | RDS(ON) | | 8 | 12 | Ω | VGS = -10V, ID = -200 mA | 3 |
| P-ch Change in RDS(ON) with Temperature | ΔRDS(ON) | | | 1.7 | %/°C | VGS = -10V, ID = -200 mA (Note 2) | 3 |
| P-ch Forward Transconductance | GFS | 100 | 250 | | mmho | VDS = -25V, ID = -200 mA | 3 |
| P-ch Input Capacitance | CISS | | 75 | 125 | pF | VGS = 0V, VDS = -25V, f = 1 MHz | 3 |
| P-ch Common-Source Output Capacitance | COSS | | 20 | 85 | pF | | 3 |
| P-ch Reverse Transfer Capacitance | CRSS | | 10 | 35 | pF | | 3 |
| P-ch Turn-On Delay Time | td(ON) | | | 10 | ns | VDD = -25V, ID = -0.75A, RGEN = 25Ω | 3 |
| P-ch Rise Time | tr | | | 15 | ns | | 3 |
| P-ch Turn-Off Delay Time | td(OFF) | | | 20 | ns | | 3 |
| P-ch Fall Time | tf | | | 15 | ns | | 3 |
| P-ch Diode Forward Voltage Drop | VSD | | | -1.8 | V | VGS = 0V, ISD = -0.5A (Note 1) | 3 |
| Gate-to-Source Voltage (absolute maximum) | | -20 | | 20 | V | | 2 |
| Operating Ambient Temperature (absolute maximum) | TA | -55 | | 150 | °C | | 2 |
| Storage Temperature (absolute maximum) | TS | -55 | | 150 | °C | | 2 |
| Operating Ambient Temperature | TA | -55 | | 150 | °C | | 3 |
| Storage Temperature | TS | -55 | | 150 | °C | | 3 |
| Thermal resistance, junction-to-ambient, 8-lead SOIC | θJA | | 101 | | °C/W | Note 1: 1 oz., four-layer, 3” x 4” PCB | 3 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Pin Number Pin Name Description 1 SN Source N-channel | 4 |
## CAD (KiCad official)
- Symbol: `TC2320TG-G`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `tc2320tg-g-etched.step` / `tc2320tg-g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tc2320tg-g.step` / `tc2320tg-g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Microchip Tech datasheet](docs/tc2320tg-g-datasheet.pdf) (12 pp, sha256 `5fb923c93eb3fe21`, retrieved 2026-10-30, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tc2320tg-g-datasheet.pdf)