component
TB3100M-13-F
Public Made by Adomby adom
Diodes Incorporated ESD And Surge Protection (TVS/ESD), SMB. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownTB3100M-13-F
Diodes Incorporated · ESD And Surge Protection (TVS/ESD) · SMB
TB3100M-13-F from Diodes Incorporated, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
| 2 | 2 | passive | Terminal 2 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SMB |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Rated Repetitive Off-State Voltage | VDRM | 275 | V | 3 | |||
| Maximum Off-State Leakage Current | IDRM | 5 | uA | @ VDRM | 3 | ||
| Maximum Breakover Voltage | VBO | 350 | V | 3 | |||
| Maximum On-State Voltage | VT | 3.5 | V | @ IT = 1A | 3 | ||
| Breakover Current | IBO | 50 | 800 | mA | 3 | ||
| Holding Current | IH | 150 | 800 | mA | Note 4 | 3 | |
| Typical Off-State Capacitance | CO | 60 | pF | f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias (Note 5) | 3 | ||
| Non-Repetitive Peak Impulse Current | Ipp | 50 | A | @10/1000us | 2 | ||
| Non-Repetitive Peak On-State Current | ITSM | 30 | A | @8.3ms (one-half cycle) | 2 | ||
| Typical Positive Temperature Coefficient for Breakdown Voltage | ΔVBR/ΔTj | 0.1 | %/°C | 2 | |||
| Junction Temperature Range | TJ | -40 | 150 | °C | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Lead | RθJL | 20 | °C/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 100 | °C/W | 2 | |||
| Peak Pulse Current, Surge Waveform 2/10 us | Ipp | 300 | A | 2/10 us GR-1089-CORE | 2 | ||
| Peak Pulse Current, Surge Waveform 8/20 us | Ipp | 250 | A | 8/20 us IEC 61000-4-5 | 2 | ||
| Peak Pulse Current, Surge Waveform 10/160 us | Ipp | 150 | A | 10/160 us FCC Part 68 | 2 | ||
| Peak Pulse Current, Surge Waveform 10/700 us | Ipp | 100 | A | 10/700 us ITU-T, K.20/K.21 | 2 | ||
| Peak Pulse Current, Surge Waveform 10/560 us | Ipp | 75 | A | 10/560 us FCC Part 68 | 2 | ||
| Peak Pulse Current, Surge Waveform 10/1000 us | Ipp | 50 | A | 10/1000 us GR-1089-CORE | 2 |
CAD (KiCad official)
- Symbol:
TB3100M-13-F - Footprint:
Diode_SMD:D_SMB - 3D model: SMB (KiCad packages3D, STEP)
- 3D model files:
tb3100m-13-f-etched.step/tb3100m-13-f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tb3100m-13-f.step/tb3100m-13-f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
2dd4e1cb937f7f1e, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarytwo-terminal convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).