main
Ray t810-600b: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) 1018d68 17d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "t810-600b",
  "title": "T810-600B",
  "brief": "STMicroelectronics Thyristors (SCR)/Modules, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "t810-600b",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "T810-600B",
    "manufacturer": "STMicroelectronics",
    "package": "DPAK",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "Thyristors (SCR)/Modules",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603086213213937664",
    "parts": {
      "symbol": "t810-600b.kicad_sym",
      "footprint": "t810-600b.kicad_mod",
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      "model_3d_step": "t810-600b-etched.step",
      "model_3d_step_plain": "t810-600b.step",
      "lbr": "t810-600b.lbr"
    },
    "distributor_links": {
      "lcsc": "C2965375",
      "digikey": "497-16218-5-ND",
      "mouser": "511-T810-600B"
    },
    "distributor_check": {
      "checked_at": "2026-10-08T23:45:33Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "497-16218-5-ND",
        "status": "found",
        "lifecycle": "Active"
      },
      "mouser": {
        "pn": "511-T810-600B",
        "status": "found"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "A1",
        "type": "passive",
        "description": "Main terminal A1 of the triac, the reference terminal for gate triggering and for A2 voltage (both polarities of A2 referenced to A1)."
      },
      {
        "number": "2",
        "name": "A2",
        "type": "passive",
        "description": "Main terminal A2 of the triac, connected to the tab, with VDRM/VRRM of 600 V for T810-600B and 8 A RMS on-state current (IT(RMS), Tc = 110 °C)."
      },
      {
        "number": "3",
        "name": "G",
        "type": "input",
        "description": "Gate trigger input; T810 logic-level version has IGT max 10 mA (VD = 12 V, RL = 30 Ω) and VGT max 1.2 V."
      }
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        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet text and drawings label the DPAK terminals only as A1, A2 and G, with the tab also A2.; The DPAK outline (Fig. 13) shows two leads plus a tab, with the centre lead cut short. The tab (A2) ",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 21,
        "cost_usd": 0.4142,
        "at": "2026-10-08T23:45:14"
      },
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603086213213937664",
        "pages": 21,
        "sha256": "ad680880278c15e3",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
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        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          9.9,
          6.5,
          2.32
        ],
        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
        "checked": "2026-10-08",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "t810-600b-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
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        "sha256": "df3d0fc45c2a2bfbf0055e93d3a0b23fc482c948d124331d5ce46612635adfa7",
        "checked": "2026-10-16",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "STMicroelectronics",
      "Package": "DPAK",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "ad680880278c15e3",
      "rows": [
        {
          "name": "RMS on-state current (full sine wave), Tc = 110 °C",
          "symbol": "IT(RMS)",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 8,
          "conditions": "IPAK, DPAK, TO-220AB, D2PAK; Tc = 110 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Non repetitive surge peak on-state current",
          "symbol": "ITSM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 80,
          "conditions": "f = 50 Hz, t = 20 ms; full cycle, Tj initial = 25 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Non repetitive surge peak on-state current",
          "symbol": "ITSM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 84,
          "conditions": "f = 60 Hz, tp = 16.7 ms; full cycle, Tj initial = 25 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "I2t value for fusing",
          "symbol": "I2t",
          "kind": "absolute_maximum",
          "unit": "A2s",
          "min": null,
          "typ": null,
          "max": 36,
          "conditions": "tp = 10 ms",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Critical rate of rise of on-state current",
          "symbol": "dI/dt",
          "kind": "absolute_maximum",
          "unit": "A/µs",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "IG = 2 x IGT, tr ≤ 100 ns, f = 120 Hz, Tj = 125 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Peak gate current",
          "symbol": "IGM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 4,
          "conditions": "tp = 20 µs, Tj = 125 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Average gate power dissipation",
          "symbol": "PG(AV)",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "Tj = 125 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Storage junction temperature range",
          "symbol": "Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -40,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Operating junction temperature range",
          "symbol": "Tj",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -40,
          "typ": null,
          "max": 125,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Triggering gate current (10 mA sensitivity column, T810)",
          "symbol": "IGT",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 10,
          "conditions": "VD = 12 V, RL = 30 Ω, quadrants I - II - III",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate trigger voltage",
          "symbol": "VGT",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.2,
          "conditions": "quadrants I - II - III",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate non-trigger voltage",
          "symbol": "VGD",
          "kind": "electrical",
          "unit": "V",
          "min": 0.2,
          "typ": null,
          "max": null,
          "conditions": "VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C, quadrants I - II - III",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Holding current (10 mA column, T810)",
          "symbol": "IH",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 15,
          "conditions": "IT = 100 mA, quadrants I - II - III",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Latching current (10 mA column, T810), quadrants I and III",
          "symbol": "IL",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 25,
          "conditions": "IG = 1.2 x IGT, quadrants I - III",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Latching current (10 mA column, T810), quadrant II",
          "symbol": "IL",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 30,
          "conditions": "IG = 1.2 x IGT, quadrant II",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Critical rate of rise of off-state voltage (10 mA column, T810)",
          "symbol": "dV/dt",
          "kind": "electrical",
          "unit": "V/µs",
          "min": null,
          "typ": null,
          "max": 40,
          "conditions": "VD = 67% VDRM, gate open, Tj = 125 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Threshold on-state voltage",
          "symbol": "VTO",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 0.85,
          "conditions": "Tj = 125 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Dynamic resistance",
          "symbol": "RD",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "Tj = 125 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "On-state voltage",
          "symbol": "VTM",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.55,
          "conditions": "ITM = 11 A, tp = 380 µs, Tj = 25 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Off-state and reverse leakage current",
          "symbol": "IDRM IRRM",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 5,
          "conditions": "VDRM = VRRM, Tj = 25 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Off-state and reverse leakage current",
          "symbol": "IDRM IRRM",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDRM = VRRM, Tj = 125 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Max. junction to case thermal resistance (AC)",
          "symbol": "Rth(j-c)",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 1.6,
          "conditions": "IPAK / D2PAK / DPAK / TO-220AB",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Junction to ambient thermal resistance (typ.)",
          "symbol": "Rth(j-a)",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 70,
          "max": null,
          "conditions": "DPAK; S = 1 cm² copper surface under tab, FR4 PCB, copper 35 µm",
          "source_page": 3,
          "source": "datasheet"
        }
      ]
    }
  },
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    "breadcrumbs",
    "info"
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  "discovery_triggers": [
    "t810-600b"
  ],
  "discovery_pitch": "T810-600B (STMicroelectronics) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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  "visibility": {
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