component
T410-600B-TR
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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t410-600b-tr: specified limits as data (metadata.characteristics, 23 rows from the datasheet)
2 files changed
+313
README.md+30@@ -21,6 +21,36 @@ T410-600B-TR from STMicroelectronics, in a DPAK. Pinout and pin descriptions ext | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate trigger current (Quadrants I-II-III) | IGT | | | 10 | mA | VD = 12 V, RL = 30 Ω, I - II - III | 2 |+| Gate trigger voltage | VGT | | | 1.3 | V | VD = 12 V, RL = 30 Ω, I - II - III | 2 |+| Gate non-trigger voltage | VGD | 0.2 | | | V | VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C, I - II - III | 2 |+| Holding current | IH | | | 15 | mA | IT = 100 mA | 2 |+| Latching current (Quadrant I-III) | IL | | | 25 | mA | IG = 1.2 IGT, I - III | 2 |+| Latching current (Quadrant II) | IL | | | 30 | mA | IG = 1.2 IGT, II | 2 |+| Critical rate of rise of off-state voltage | dV/dt | 40 | | | V/µs | VD = 67% VDRM, gate open, Tj = 125 °C | 2 |+| On-state voltage | VTM | | | 1.56 | V | ITM = 5.5 A, tp = 380 µs, Tj = 25 °C | 3 |+| Threshold voltage | Vt0 | | | 0.89 | V | Tj = 125 °C | 3 |+| Dynamic resistance | Rd | | | 120 | mΩ | Tj = 125 °C | 3 |+| Repetitive peak off-state current | IDRM, IRRM | | | 5 | µA | VDRM = VRRM, Tj = 25 °C | 3 |+| Repetitive peak off-state current | IDRM, IRRM | | | 1 | mA | VDRM = VRRM, Tj = 125 °C | 3 |+| RMS on-state current (full sine wave) | IT(rms) | | | 4 | A | Tc = 110 °C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 30 | A | F = 50 Hz, t = 20 ms, full cycle, Tj initial = 25 °C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 31 | A | F = 60 Hz, t = 16.7 ms, full cycle, Tj initial = 25 °C | 2 |+| I²t value for fusing | I²t | | | 5.1 | A²s | tp = 10 ms | 2 |+| Critical rate of rise of on-state current | dI/dt | | | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125 °C | 2 |+| Peak gate current | IGM | | | 4 | A | tp = 20 µs, Tj = 125 °C | 2 |+| Average gate power dissipation | PG(AV) | | | 1 | W | Tj = 125 °C | 2 |+| Storage junction temperature range | Tstg | -40 | | 150 | °C | | 2 |+| Operating junction temperature range | Tj | -40 | | 125 | °C | | 2 |+| Junction to case (AC) thermal resistance | Rth(j-c) | | 2.6 | | °C/W | IPAK, DPAK, TO-220AB | 3 |+| Junction to ambient thermal resistance (DPAK) | Rth(j-a) | | 70 | | °C/W | S = 0.5 cm² copper surface under tab | 3 |+ ## CAD (KiCad official) - Symbol: `T410-600B-TR`
page.json+283@@ -136,6 +136,289 @@ "Package": "DPAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "e28e0c1c755cad1e",+ "rows": [+ {+ "name": "Gate trigger current (Quadrants I-II-III)",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VD = 12 V, RL = 30 Ω, I - II - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger voltage",+ "symbol": "VGT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "VD = 12 V, RL = 30 Ω, I - II - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate non-trigger voltage",+ "symbol": "VGD",+ "kind": "electrical",+ "unit": "V",+ "min": 0.2,+ "typ": null,+ "max": null,+ "conditions": "VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C, I - II - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Holding current",+ "symbol": "IH",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "IT = 100 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current (Quadrant I-III)",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "IG = 1.2 IGT, I - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current (Quadrant II)",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "IG = 1.2 IGT, II",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of off-state voltage",+ "symbol": "dV/dt",+ "kind": "electrical",+ "unit": "V/µs",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "VD = 67% VDRM, gate open, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-state voltage",+ "symbol": "VTM",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.56,+ "conditions": "ITM = 5.5 A, tp = 380 µs, Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Threshold voltage",+ "symbol": "Vt0",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.89,+ "conditions": "Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Dynamic resistance",+ "symbol": "Rd",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state current",+ "symbol": "IDRM, IRRM",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDRM = VRRM, Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state current",+ "symbol": "IDRM, IRRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDRM = VRRM, Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "RMS on-state current (full sine wave)",+ "symbol": "IT(rms)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "Tc = 110 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "F = 50 Hz, t = 20 ms, full cycle, Tj initial = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 31,+ "conditions": "F = 60 Hz, t = 16.7 ms, full cycle, Tj initial = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "I²t value for fusing",+ "symbol": "I²t",+ "kind": "absolute_maximum",+ "unit": "A²s",+ "min": null,+ "typ": null,+ "max": 5.1,+ "conditions": "tp = 10 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of on-state current",+ "symbol": "dI/dt",+ "kind": "absolute_maximum",+ "unit": "A/µs",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak gate current",+ "symbol": "IGM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "tp = 20 µs, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Average gate power dissipation",+ "symbol": "PG(AV)",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage junction temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction to case (AC) thermal resistance",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 2.6,+ "max": null,+ "conditions": "IPAK, DPAK, TO-220AB",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction to ambient thermal resistance (DPAK)",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 70,+ "max": null,+ "conditions": "S = 0.5 cm² copper surface under tab",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],