component
T3035H-8I
Public Made by Adomby adom
STMicroelectronics TRIACs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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T3035H-8I
STMicroelectronics · TRIACs · TO-220AB
T3035H-8I from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Main terminal A1 (reference terminal for A2 and gate); the triac blocks 800 V (VDRM/VRRM) symmetrically and carries 30 A RMS on-state current. |
| 2 | A2 | passive | Main terminal A2, connected to the AC load side; the tab is insulated (2.5 kV RMS, 1 minute) so it is not electrically connected to the tab. |
| 3 | G | input | Gate trigger input; IGT 5 mA min to 35 mA max and VGT max 1.3 V at VD = 12 V, RL = 30 Ω, in quadrants I, II and III, with peak gate current limited to 4 A (tp = 20 µs). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| RMS on-state current (full sine wave) | IT(RMS) | 30 | A | Tc = 91 °C | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 283 | A | full cycle, Tj initial = 25 °C, t = 16.7 ms | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 270 | A | full cycle, Tj initial = 25 °C, t = 20 ms | 2 | ||
| I2t value for fusing | I2t | 482 | A2s | tp = 10 ms | 2 | ||
| Critical rate of rise of on-state current | dl/dt | 100 | A/µs | IG = 2 x IGT, tr ≤ 100 ns, f = 100 Hz, Tj = 25 °C | 2 | ||
| Repetitive peak off-state voltage | VDRM/VRRM | 800 | V | 2 | |||
| Non repetitive peak off-state voltage | VDSM/VRSM | 900 | V | tp = 10 ms, Tj = 25 °C | 2 | ||
| Peak gate current | IGM | 4 | A | tp = 20 µs, Tj = 150 °C | 2 | ||
| Maximum gate power dissipation | PGM | 5 | W | 2 | |||
| Average gate power dissipation | PG(AV) | 1 | W | Tj = 150 °C | 2 | ||
| Storage temperature range | Tstg | -40 | 150 | °C | 2 | ||
| Operating junction temperature range | Tj | -40 | 150 | °C | 2 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10 s | 2 | ||
| Insulation RMS voltage | VINS | 2.5 | kV | 1 minute | 2 | ||
| Gate trigger current | IGT | 5 | 35 | mA | VD = 12 V, RL = 30 Ω, quadrants I - II - III | 2 | |
| Gate trigger voltage | VGT | 1.3 | V | VD = 12 V, RL = 30 Ω, quadrants I - II - III | 2 | ||
| Gate non-trigger voltage | VGD | 0.15 | V | VD = VDRM, RL = 3.3 kΩ, Tj = 150 °C, quadrants I - II - III | 2 | ||
| Latching current | IL | 75 | mA | IG = 1.2 x IGT, quadrants I - III | 2 | ||
| Latching current | IL | 90 | mA | IG = 1.2 x IGT, quadrant II | 2 | ||
| Holding current | IH | 60 | mA | IT = 500 mA, gate open | 2 | ||
| Static dV/dt | dV/dt | 1500 | V/µs | VD = 536 V, gate open, Tj = 150 °C | 2 | ||
| Critical rate of decrease of commutating current | (dl/dt)c | 25 | A/ms | Without snubber network, Tj = 150 °C | 2 | ||
| On-state voltage | VTM | 1.55 | V | IT = 42 A, tp = 380 µs, Tj = 25 °C | 3 | ||
| Threshold voltage | VTO | 0.83 | V | Tj = 150 °C | 3 | ||
| Dynamic resistance | RD | 16 | mΩ | Tj = 150 °C | 3 | ||
| Off-state/reverse leakage current | IDRM/IRRM | 5 | µA | VDRM = VRRM = 800 V, Tj = 25 °C | 3 | ||
| Off-state/reverse leakage current | IDRM/IRRM | 8.5 | mA | VDRM = VRRM = 800 V, Tj = 150 °C | 3 | ||
| Off-state/reverse leakage current | IDRM/IRRM | 3.6 | mA | VDRM = VRRM = 400 V, peak voltage, Tj = 150 °C | 3 | ||
| Junction to case thermal resistance (AC) | Rth(j-c) | 1.6 | °C/W | 3 | |||
| Junction to ambient thermal resistance | Rth(j-a) | 60 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
T3035H-8I - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
t3035h-8i-etched.step/t3035h-8i-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);t3035h-8i.step/t3035h-8i.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (11 pp, sha256
26d62689eadb622d, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# T3035H-8I
**STMicroelectronics** · TRIACs · TO-220AB
T3035H-8I from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Main terminal A1 (reference terminal for A2 and gate); the triac blocks 800 V (VDRM/VRRM) symmetrically and carries 30 A RMS on-state current. |
| 2 | A2 | passive | Main terminal A2, connected to the AC load side; the tab is insulated (2.5 kV RMS, 1 minute) so it is not electrically connected to the tab. |
| 3 | G | input | Gate trigger input; IGT 5 mA min to 35 mA max and VGT max 1.3 V at VD = 12 V, RL = 30 Ω, in quadrants I, II and III, with peak gate current limited to 4 A (tp = 20 µs). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| RMS on-state current (full sine wave) | IT(RMS) | | | 30 | A | Tc = 91 °C | 2 |
| Non repetitive surge peak on-state current | ITSM | | | 283 | A | full cycle, Tj initial = 25 °C, t = 16.7 ms | 2 |
| Non repetitive surge peak on-state current | ITSM | | | 270 | A | full cycle, Tj initial = 25 °C, t = 20 ms | 2 |
| I2t value for fusing | I2t | | | 482 | A2s | tp = 10 ms | 2 |
| Critical rate of rise of on-state current | dl/dt | | | 100 | A/µs | IG = 2 x IGT, tr ≤ 100 ns, f = 100 Hz, Tj = 25 °C | 2 |
| Repetitive peak off-state voltage | VDRM/VRRM | | | 800 | V | | 2 |
| Non repetitive peak off-state voltage | VDSM/VRSM | | | 900 | V | tp = 10 ms, Tj = 25 °C | 2 |
| Peak gate current | IGM | | | 4 | A | tp = 20 µs, Tj = 150 °C | 2 |
| Maximum gate power dissipation | PGM | | | 5 | W | | 2 |
| Average gate power dissipation | PG(AV) | | | 1 | W | Tj = 150 °C | 2 |
| Storage temperature range | Tstg | -40 | | 150 | °C | | 2 |
| Operating junction temperature range | Tj | -40 | | 150 | °C | | 2 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10 s | 2 |
| Insulation RMS voltage | VINS | | | 2.5 | kV | 1 minute | 2 |
| Gate trigger current | IGT | 5 | | 35 | mA | VD = 12 V, RL = 30 Ω, quadrants I - II - III | 2 |
| Gate trigger voltage | VGT | | | 1.3 | V | VD = 12 V, RL = 30 Ω, quadrants I - II - III | 2 |
| Gate non-trigger voltage | VGD | | | 0.15 | V | VD = VDRM, RL = 3.3 kΩ, Tj = 150 °C, quadrants I - II - III | 2 |
| Latching current | IL | | | 75 | mA | IG = 1.2 x IGT, quadrants I - III | 2 |
| Latching current | IL | | | 90 | mA | IG = 1.2 x IGT, quadrant II | 2 |
| Holding current | IH | | | 60 | mA | IT = 500 mA, gate open | 2 |
| Static dV/dt | dV/dt | 1500 | | | V/µs | VD = 536 V, gate open, Tj = 150 °C | 2 |
| Critical rate of decrease of commutating current | (dl/dt)c | 25 | | | A/ms | Without snubber network, Tj = 150 °C | 2 |
| On-state voltage | VTM | | | 1.55 | V | IT = 42 A, tp = 380 µs, Tj = 25 °C | 3 |
| Threshold voltage | VTO | | | 0.83 | V | Tj = 150 °C | 3 |
| Dynamic resistance | RD | | | 16 | mΩ | Tj = 150 °C | 3 |
| Off-state/reverse leakage current | IDRM/IRRM | | | 5 | µA | VDRM = VRRM = 800 V, Tj = 25 °C | 3 |
| Off-state/reverse leakage current | IDRM/IRRM | | | 8.5 | mA | VDRM = VRRM = 800 V, Tj = 150 °C | 3 |
| Off-state/reverse leakage current | IDRM/IRRM | | | 3.6 | mA | VDRM = VRRM = 400 V, peak voltage, Tj = 150 °C | 3 |
| Junction to case thermal resistance (AC) | Rth(j-c) | | | 1.6 | °C/W | | 3 |
| Junction to ambient thermal resistance | Rth(j-a) | | 60 | | °C/W | | 3 |
## CAD (KiCad official)
- Symbol: `T3035H-8I`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `t3035h-8i-etched.step` / `t3035h-8i-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `t3035h-8i.step` / `t3035h-8i.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/t3035h-8i.pdf) (11 pp, sha256 `26d62689eadb622d`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/t3035h-8i-datasheet.pdf)