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T2550-12I

STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB-3

T2550-12I from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal A1, the reference terminal for A2 in the electrical characteristics; the device blocks up to 1200 V (VDRM/VRRM) and carries 25 A RMS.
2 A2 passive Main terminal A2 of the triac, rated for 1200 V repetitive peak off-state voltage and 25 A RMS on-state current (Tc = 71 °C for the insulated package).
3 G input Gate trigger input with IGT max 50 mA (VD = 12 V, RL = 33 Ω), VGT max 1.3 V, peak gate current IGM 4 A for 20 µs.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
RMS on-state current (full sine wave), TO-220AB Ins. IT(RMS) 25 A TO-220AB Ins. Tc = 71 °C 2
Non repetitive surge peak on-state current ITSM 240 A full cycle, Tj initial = 25 °C; tp = 20 ms 2
Non repetitive surge peak on-state current ITSM 252 A full cycle, Tj initial = 25 °C; tp = 16.7 ms 2
I2t value for fusing I2t 380 A2s tp = 10 ms 2
Critical rate of rise of on-state current dI/dt 100 A/µs IG = 2 x IGT, tr ≤ 100 ns; f = 60 Hz; Tj = 125 °C 2
Repetitive peak off-state voltage VDRM/VRRM 1200 V 2
Non repetitive surge peak off-state voltage VDSM/VRSM 1300 V tp = 10 ms 2
Peak gate current IGM 4 A tp = 20 µs 2
Peak positive gate voltage VGM 16 V tp = 20 µs 2
Average gate power dissipation PG(AV) 1 W 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 125 °C 2
Insulation RMS voltage, 1 minute Vins. 2500 V TO-220AB Ins., 1 minute 2
Gate trigger current IGT 2.5 50 mA VD = 12 V, RL = 33 Ω; quadrants I - II - III 2
Gate trigger voltage VGT 1.3 V quadrants I - II - III 2
Gate non-trigger voltage VGD 0.2 V VD = VDRM, RL = 3,3 kΩ, Tj = 125 °C; quadrants I - II - III 2
Holding current IH 60 mA IT = 500 mA, gate open 2
Latching current IL 80 mA IG = 1.2 IGT; quadrants I - II - III 2
Critical rate of rise of off-state voltage dV/dt 2500 V/µs VD = 67 % VDRM, gate open, Tj = 125 °C 2
Critical rate of decrease of main current (dI/dt)c 20 A/ms Without snubber, Tj = 125 °C 2
Turn-on time tgt 2 µs ITM = 13 A, VD = 400 V, IG = 100 mA, dIG/dt = 100 mA/µs, RL = 30 Ω; quadrants I - II - III 2
On-state voltage VTM 1.55 V ITM = 35 A, tp = 380 µs, Tj = 25 °C 3
Threshold on-state voltage VTO 0.85 V Tj = 125 °C 3
Dynamic resistance RD 20 mΩ Tj = 125 °C 3
Repetitive peak off-state current IDRM/IRRM 10 µA VD = VR = 1200 V, Tj = 25 °C 3
Repetitive peak off-state current IDRM/IRRM 6 mA VD = VR = 1200 V, Tj = 125 °C 3
Junction to case (AC), TO-220AB insulated Rth(j-c) 1.7 °C/W AC 3
Junction to ambient, TO-220AB / TO-220AB ins Rth(j-a) 60 °C/W 3

CAD (KiCad official)

  • Symbol: T2550-12I
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB-3 (KiCad packages3D, STEP)
  • 3D model files: t2550-12i-etched.step / t2550-12i-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); t2550-12i.step / t2550-12i.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (14 pp, sha256 9031904ec977d1f7, retrieved 2026-10-25, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF