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T2535-800G-TR

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STMicroelectronics Thyristors (SCR)/Modules, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs t2535-800g-tr: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain… · Ray 24d ago
viewers t2535-800g-tr: viewers · Ray 1mo ago
package.json t2535-800g-tr: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain… · Ray 24d ago
page.json t2535-800g-tr: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain… · Ray 24d ago
README.md t2535-800g-tr: specified limits as data (metadata.characteristics, 26 rows from the datasheet) · Ray 24d ago
t2535-800g-tr-etched.fit.json t2535-800g-tr: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
t2535-800g-tr-etched.glb t2535-800g-tr: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain… · Ray 24d ago
t2535-800g-tr-etched.step t2535-800g-tr: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain… · Ray 24d ago
t2535-800g-tr.glb Publish 0.1.0 · Ray 1mo ago
t2535-800g-tr.kicad_mod Publish 0.1.0 · Ray 1mo ago
t2535-800g-tr.kicad_sym Publish 0.1.0 · Ray 1mo ago
t2535-800g-tr.lbr Publish 0.1.0 · Ray 1mo ago
t2535-800g-tr.step Publish 0.1.0 · Ray 1mo ago

T2535-800G-TR

STMicroelectronics · Thyristors (SCR)/Modules · D2PAK

T2535-800G-TR from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal 1 (MT1), reference terminal for gate trigger voltage/current and for voltage polarity measurements (A2 referenced to A1).
2 A2 passive Main terminal 2 (MT2); electrically connected to the D2PAK tab, which also serves as the heat-dissipation contact to the PCB/heatsink.
3 G input Gate terminal; a gate current of IGT (max. 35 mA for the T2535 device) triggers the triac into conduction, with max. peak gate current IGM of 4 A and average gate power dissipation PG(AV) of 1 W.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package D2PAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
RMS on-state current (full sine wave), D2PAK/TO-220AB IT(RMS) 25 A Tc = 100 °C 2
Non repetitive surge peak on-state current ITSM 260 A f = 60 Hz, tp = 16.7 ms, Tj initial = 25 °C 2
Non repetitive surge peak on-state current ITSM 250 A f = 50 Hz, tp = 20 ms, Tj initial = 25 °C 2
I2t value for fusing I2t 340 A2s tp = 10 ms 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns, f = 120 Hz, Tj = 125 °C 2
Repetitive peak off-state voltage (800 V variant) VDRM, VRRM 800 V Tj = 25 °C 2
Peak gate current IGM 4 A tp = 20 µs, Tj = 125 °C 2
Average gate power dissipation PG(AV) 1 W Tj = 125 °C 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 125 °C 2
Maximum lead temperature for soldering TL 260 °C during 10 s 2
Gate trigger current (I-II-III) IGT 35 mA VD = 12 V, RL = 33 Ω; I - II - III 2
Gate trigger voltage VGT 1.3 V I - II - III 2
Gate non-trigger voltage VGD 0.2 V VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C; I - II - III 2
Holding current IH 50 mA IT = 500 mA 2
Latching current IL 70 mA IG = 1.2 IGT; I - III 2
Latching current IL 80 mA IG = 1.2 IGT; II 2
Critical rate of rise of off-state voltage dV/dt 500 V/µs VD = 67 % VDRM, gate open, Tj = 125 °C 2
Critical rate of decrease of main current (dI/dt)c 13 A/ms Without snubber 2
Threshold on-state voltage VTM 1.55 V ITM = 35 A, tp = 380 µs, Tj = 25 °C 3
Threshold on-state voltage VTO 0.85 V Tj = 125 °C 3
Dynamic resistance RD 16 mΩ Tj = 125 °C 3
Repetitive off-state leakage current IDRM/IRRM 5 µA VT = VDRM, VT = VRRM; Tj = 25 °C 3
Repetitive off-state leakage current IDRM/IRRM 3 mA VT = VDRM, VT = VRRM; Tj = 125 °C 3
Thermal resistance junction to case (AC), D2PAK Rth(j-c) 0.8 °C/W Junction to case (AC), D2PAK / TO-220AB 3
Thermal resistance junction to ambient, D2PAK Rth(j-a) 45 °C/W S = 2.5 cm² copper surface under tab 3

CAD (KiCad official)

  • Symbol: T2535-800G-TR
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: t2535-800g-tr-etched.step / t2535-800g-tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); t2535-800g-tr.step / t2535-800g-tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (14 pp, sha256 6e823c38ec4e0717, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF