component
T2535-800G-TR
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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t2535-800g-tr: specified limits as data (metadata.characteristics, 26 rows from the datasheet)
2 files changed
+352
README.md+33@@ -21,6 +21,39 @@ T2535-800G-TR from STMicroelectronics, in a D2PAK. Pinout and pin descriptions e | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| RMS on-state current (full sine wave), D2PAK/TO-220AB | IT(RMS) | | | 25 | A | Tc = 100 °C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 260 | A | f = 60 Hz, tp = 16.7 ms, Tj initial = 25 °C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 250 | A | f = 50 Hz, tp = 20 ms, Tj initial = 25 °C | 2 |+| I2t value for fusing | I2t | | | 340 | A2s | tp = 10 ms | 2 |+| Critical rate of rise of on-state current | dI/dt | | | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns, f = 120 Hz, Tj = 125 °C | 2 |+| Repetitive peak off-state voltage (800 V variant) | VDRM, VRRM | | | 800 | V | Tj = 25 °C | 2 |+| Peak gate current | IGM | | | 4 | A | tp = 20 µs, Tj = 125 °C | 2 |+| Average gate power dissipation | PG(AV) | | | 1 | W | Tj = 125 °C | 2 |+| Storage junction temperature range | Tstg | -40 | | 150 | °C | | 2 |+| Operating junction temperature range | Tj | -40 | | 125 | °C | | 2 |+| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10 s | 2 |+| Gate trigger current (I-II-III) | IGT | | | 35 | mA | VD = 12 V, RL = 33 Ω; I - II - III | 2 |+| Gate trigger voltage | VGT | | | 1.3 | V | I - II - III | 2 |+| Gate non-trigger voltage | VGD | 0.2 | | | V | VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C; I - II - III | 2 |+| Holding current | IH | | | 50 | mA | IT = 500 mA | 2 |+| Latching current | IL | | | 70 | mA | IG = 1.2 IGT; I - III | 2 |+| Latching current | IL | | | 80 | mA | IG = 1.2 IGT; II | 2 |+| Critical rate of rise of off-state voltage | dV/dt | 500 | | | V/µs | VD = 67 % VDRM, gate open, Tj = 125 °C | 2 |+| Critical rate of decrease of main current | (dI/dt)c | 13 | | | A/ms | Without snubber | 2 |+| Threshold on-state voltage | VTM | | | 1.55 | V | ITM = 35 A, tp = 380 µs, Tj = 25 °C | 3 |+| Threshold on-state voltage | VTO | | | 0.85 | V | Tj = 125 °C | 3 |+| Dynamic resistance | RD | | | 16 | mΩ | Tj = 125 °C | 3 |+| Repetitive off-state leakage current | IDRM/IRRM | | | 5 | µA | VT = VDRM, VT = VRRM; Tj = 25 °C | 3 |+| Repetitive off-state leakage current | IDRM/IRRM | | | 3 | mA | VT = VDRM, VT = VRRM; Tj = 125 °C | 3 |+| Thermal resistance junction to case (AC), D2PAK | Rth(j-c) | | | 0.8 | °C/W | Junction to case (AC), D2PAK / TO-220AB | 3 |+| Thermal resistance junction to ambient, D2PAK | Rth(j-a) | | 45 | | °C/W | S = 2.5 cm² copper surface under tab | 3 |+ ## CAD (KiCad official) - Symbol: `T2535-800G-TR`
page.json+319@@ -135,6 +135,325 @@ "Package": "D2PAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "6e823c38ec4e0717",+ "rows": [+ {+ "name": "RMS on-state current (full sine wave), D2PAK/TO-220AB",+ "symbol": "IT(RMS)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "Tc = 100 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "f = 60 Hz, tp = 16.7 ms, Tj initial = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "f = 50 Hz, tp = 20 ms, Tj initial = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "I2t value for fusing",+ "symbol": "I2t",+ "kind": "absolute_maximum",+ "unit": "A2s",+ "min": null,+ "typ": null,+ "max": 340,+ "conditions": "tp = 10 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of on-state current",+ "symbol": "dI/dt",+ "kind": "absolute_maximum",+ "unit": "A/µs",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IG = 2 x IGT, tr ≤ 100 ns, f = 120 Hz, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state voltage (800 V variant)",+ "symbol": "VDRM, VRRM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 800,+ "conditions": "Tj = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak gate current",+ "symbol": "IGM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "tp = 20 µs, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Average gate power dissipation",+ "symbol": "PG(AV)",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage junction temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum lead temperature for soldering",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "during 10 s",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger current (I-II-III)",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "VD = 12 V, RL = 33 Ω; I - II - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger voltage",+ "symbol": "VGT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "I - II - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate non-trigger voltage",+ "symbol": "VGD",+ "kind": "electrical",+ "unit": "V",+ "min": 0.2,+ "typ": null,+ "max": null,+ "conditions": "VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C; I - II - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Holding current",+ "symbol": "IH",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IT = 500 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 70,+ "conditions": "IG = 1.2 IGT; I - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "IG = 1.2 IGT; II",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of off-state voltage",+ "symbol": "dV/dt",+ "kind": "electrical",+ "unit": "V/µs",+ "min": 500,+ "typ": null,+ "max": null,+ "conditions": "VD = 67 % VDRM, gate open, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of decrease of main current",+ "symbol": "(dI/dt)c",+ "kind": "electrical",+ "unit": "A/ms",+ "min": 13,+ "typ": null,+ "max": null,+ "conditions": "Without snubber",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Threshold on-state voltage",+ "symbol": "VTM",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.55,+ "conditions": "ITM = 35 A, tp = 380 µs, Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Threshold on-state voltage",+ "symbol": "VTO",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.85,+ "conditions": "Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Dynamic resistance",+ "symbol": "RD",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Repetitive off-state leakage current",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VT = VDRM, VT = VRRM; Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Repetitive off-state leakage current",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "VT = VDRM, VT = VRRM; Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to case (AC), D2PAK",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "Junction to case (AC), D2PAK / TO-220AB",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to ambient, D2PAK",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 45,+ "max": null,+ "conditions": "S = 2.5 cm² copper surface under tab",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],