component
SZT560A
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Shikues Bipolar (BJT), SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SZT560A
Shikues · Bipolar (BJT) · SOT-223
SZT560A from Shikues, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max is 6 V and VBE(sat) max is 2 V at IC=2A, IB=200mA. |
| 2 | C | passive | Collector of the NPN transistor; VCEO max is 60 V, VCBO max is 90 V and continuous IC max is 3 A. |
| 3 | E | passive | Emitter of the NPN transistor; VEBO max is 6 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 90 | V | IC= 1mA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 60 | V | IC= 1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=0.1mA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 0.5 | uA | VCB=70V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 0.5 | nA | VEB=6V, IB=0 | 1 | ||
| DC current gain | hFE | 100 | 400 | VCE=2V, IC=1A | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=2A, IB=200mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 2 | V | IC=2A, IB=200mA | 1 | ||
| Transition frequency | fT | 80 | MHZ | VCE=5V, IC=0.1A, f=10MHz | 1 | ||
| Collector-Base Voltage | VCBO | 90 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 60 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 6 | V | 1 | |||
| Collector Current -Continuous | IC | 3 | A | 1 | |||
| Collector Power Dissipation | PC | 1.25 | W | 1 | |||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
SZT560A - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
szt560a-etched.step/szt560a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);szt560a.step/szt560a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (3 pp, sha256
9c57002e4a8e079f, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SZT560A
**Shikues** · Bipolar (BJT) · SOT-223
SZT560A from Shikues, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max is 6 V and VBE(sat) max is 2 V at IC=2A, IB=200mA. |
| 2 | C | passive | Collector of the NPN transistor; VCEO max is 60 V, VCBO max is 90 V and continuous IC max is 3 A. |
| 3 | E | passive | Emitter of the NPN transistor; VEBO max is 6 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 90 | | | V | IC= 1mA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 60 | | | V | IC= 1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 | | | V | IE=0.1mA, IC=0 | 1 |
| Collector cut-off current | ICBO | | | 0.5 | uA | VCB=70V, IE=0 | 1 |
| Emitter cut-off current | IEBO | | | 0.5 | nA | VEB=6V, IB=0 | 1 |
| DC current gain | hFE | 100 | | 400 | | VCE=2V, IC=1A | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.5 | V | IC=2A, IB=200mA | 1 |
| Base-emitter saturation voltage | VBE(sat) | | | 2 | V | IC=2A, IB=200mA | 1 |
| Transition frequency | fT | 80 | | | MHZ | VCE=5V, IC=0.1A, f=10MHz | 1 |
| Collector-Base Voltage | VCBO | | | 90 | V | | 1 |
| Collector-Emitter Voltage | VCEO | | | 60 | V | | 1 |
| Emitter-Base Voltage | VEBO | | | 6 | V | | 1 |
| Collector Current -Continuous | IC | | | 3 | A | | 1 |
| Collector Power Dissipation | PC | | | 1.25 | W | | 1 |
| Junction Temperature | Tj | | | 150 | ℃ | | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 1 |
## CAD (KiCad official)
- Symbol: `SZT560A`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files: `szt560a-etched.step` / `szt560a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `szt560a.step` / `szt560a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shikues datasheet](docs/szt560a-datasheet.pdf) (3 pp, sha256 `9c57002e4a8e079f`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/szt560a-datasheet.pdf)