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Contents

README

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SZP6SMB30AT3G

Littelfuse · ESD And Surge Protection (TVS/ESD) · SMB

SZP6SMB30AT3G from Littelfuse, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Cathode passive Cathode terminal of this unidirectional TVS, identified by the color band on the package; for the 30A part the datasheet gives VRWM 25.6 V and breakdown voltage 28.5 V min to 31.5 V max at 1 mA test current.
2 Anode passive Anode terminal of this unidirectional TVS, which clamps to 41.4 V max at 14.4 A peak pulse current for the 30A part.

Key specifications

Parameter Value
Manufacturer Littelfuse
Package SMB
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Breakdown voltage (VBR), min VBR 28.5 V @ IT = 1 mA (Note 7) 3
Breakdown voltage (VBR), nominal VBR 30 V @ IT = 1 mA (Note 7) 3
Breakdown voltage (VBR), max VBR 31.5 V @ IT = 1 mA (Note 7) 3
Maximum reverse leakage current IR 5 µA @ VRWM = 25.6 V 3
Clamping voltage VC 41.4 V @ IPP = 14.4 A (Note 8) 3
Forward voltage VF 3.5 V @ IF = 30 A (Note 5) 2
Peak power dissipation PPK 600 W TL = 25°C, pulse width = 1 ms (Note 1) 1
DC power dissipation at TL PD 3 W @ TL = 75°C, measured zero lead length (Note 2) 1
DC power dissipation at TA PD 0.55 W @ TA = 25°C (Note 3) 1
Forward surge current IFSM 100 A @ TA = 25°C, 1/2 sine wave PW = 8.3 ms (Note 4), uni-directional only 1
Operating and storage temperature range TJ, Tstg -65 150 °C 1
Derate power dissipation above TL PD 40 mW/°C Derate above 75°C 1
Derate power dissipation above TA PD 4.4 mW/°C Derate above 25°C 1
Thermal resistance junction-to-lead RθJL 25 °C/W Measured zero lead length (Note 2) 1
Thermal resistance junction-to-ambient RθJA 226 °C/W FR-4 board, Littelfuse minimum recommended footprint (Note 3) 1
Temperature coefficient of VBR 0.097 %/°C 3
Junction capacitance C 635 pF Bias voltage 0 V, f = 1 MHz, TJ = 25°C (Note 9) 3

CAD (KiCad official)

  • Symbol: SZP6SMB30AT3G
  • Footprint: Diode_SMD:D_SMB
  • 3D model: SMB (KiCad packages3D, STEP)
  • 3D model files: szp6smb30at3g-etched.step / szp6smb30at3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); szp6smb30at3g.step / szp6smb30at3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Littelfuse datasheet (7 pp, sha256 baf561fbcd6cd66c, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF