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Contents

README

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SZBZX84C15ET1G

onsemi · Zener Diodes · SOT-23

SZBZX84C15ET1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE passive Anode of the Zener diode; the datasheet gives no separate pin-specific limit, and the device is rated for 250 mW total power dissipation on FR-5 board and a junction and storage temperature range of −65 to +150 °C.
2 NO CONNECTION unconnected Not internally connected; the datasheet specifies this pin as No Connection for the SOT-23 Style 8 pinout.
3 CATHODE passive Cathode of the Zener diode, identified on the package by the polarity band; the series covers Zener breakdown voltages from 2.4 V to 75 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Zener Voltage (VZ1 @ IZT1 = 5 mA) VZ1 13.8 15 15.6 V IZT1 = 5 mA (Note 4) 3
Reverse Zener Voltage (VZ2 @ IZT2 = 1 mA) VZ2 13.7 15.5 V IZT2 = 1 mA (Note 4) 3
Reverse Zener Voltage (VZ3 @ IZT3 = 20 mA) VZ3 13.9 15.7 V IZT3 = 20 mA (Note 4) 3
Maximum Zener Impedance (ZZT1 @ IZT1) ZZT1 30 Ω IZT1 = 5 mA 3
Maximum Zener Impedance (ZZT2 @ IZT2) ZZT2 200 Ω IZT2 = 1 mA 3
Maximum Zener Impedance (ZZT3 @ IZT3) ZZT3 20 Ω IZT3 = 20 mA 3
Reverse Leakage Current IR 0.05 µA VR = 10.5 V 3
Maximum Temperature Coefficient of VZ VZ 9.2 13 mV/k IZT1 = 5 mA 3
Forward Voltage VF 0.9 V IF = 10 mA 2
Maximum Capacitance C 110 pF VR = 0, f = 1 MHz 3
Total Power Dissipation on FR-5 Board PD 250 mW TA = 25°C (Note 2) 1
Derating above 25°C (FR-5 Board) PD 2 mW/°C Derated above 25°C, FR-5 board (Note 2) 1
Total Power Dissipation on Alumina Substrate PD 300 mW TA = 25°C (Note 3) 1
Derating above 25°C (Alumina Substrate) PD 2.4 mW/°C Derated above 25°C, alumina substrate (Note 3) 1
Peak Power Dissipation Ppk 225 W @ 20 s (Note 1), TL ≤ 25°C; nonrepetitive pulse per Figure 9 1
Junction and Storage Temperature Range TJ, Tstg -65 150 °C 1
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RθJA 500 °C/W FR-5 board (Note 2) 1
Thermal Resistance, Junction-to-Ambient (Alumina Substrate) RθJA 417 °C/W Alumina substrate (Note 3) 1

CAD (KiCad official)

  • Symbol: SZBZX84C15ET1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: szbzx84c15et1g-etched.step / szbzx84c15et1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); szbzx84c15et1g.step / szbzx84c15et1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 f2b6d88b8e3f13ae, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF