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Set visibility: public

Ray ·fd10a1d2c7 ·1mo ago ·parent ebc07e2
1 file changed +9−6
page.json+9−6
@@ -32,31 +32,31 @@         "number": "1",         "name": "OUT",         "type": "power_out",-        "description": "Switched output pin. Drain of the internal P-channel MOSFET; delivers current from IN when EN is high. Includes ~150\u03a9 discharge resistance to GND at shutdown. Reverse-blocking (no body diode) so OUT can be forced above IN while disabled."+        "description": "Switched output pin. Drain of the internal P-channel MOSFET; delivers current from IN when EN is high. Includes ~150Ω discharge resistance to GND at shutdown. Reverse-blocking (no body diode) so OUT can be forced above IN while disabled."       },       {         "number": "2",         "name": "GND",         "type": "power_in",-        "description": "Ground reference for the device. Also serves as the case position for \u03b8JC thermal measurement."+        "description": "Ground reference for the device. Also serves as the case position for θJC thermal measurement."       },       {         "number": "3",         "name": "ISET",         "type": "input",-        "description": "Current-limit programming pin. Connect a resistor RSET from ISET to GND to program the switch current limit: Ilim (A) = 6800 / RSET (\u03a9). Valid range is 0.4A to 2A."+        "description": "Current-limit programming pin. Connect a resistor RSET from ISET to GND to program the switch current limit: Ilim (A) = 6800 / RSET (Ω). Valid range is 0.4A to 2A."       },       {         "number": "4",         "name": "EN",         "type": "input",-        "description": "Active-high ON/OFF control input. Pull high (VEN(H) \u2265 2V) to enable the switch; pull low (VEN(L) \u2264 0.8V) to disable. Must not be left floating. Leakage \u2264 1\u00b5A at VEN = 5.5V."+        "description": "Active-high ON/OFF control input. Pull high (VEN(H) ≥ 2V) to enable the switch; pull low (VEN(L) ≤ 0.8V) to disable. Must not be left floating. Leakage ≤ 1µA at VEN = 5.5V."       },       {         "number": "5",         "name": "IN",         "type": "power_in",-        "description": "Power input pin, 2.4V to 5.5V. Source of the internal P-channel MOSFET. A 10\u00b5F ceramic bypass capacitor to GND is strongly recommended to suppress hot-plug voltage droop and input ringing during output short events. UVLO threshold ~2.3V with 0.1V hysteresis."+        "description": "Power input pin, 2.4V to 5.5V. Source of the internal P-channel MOSFET. A 10µF ceramic bypass capacitor to GND is strongly recommended to suppress hot-plug voltage droop and input ringing during output short events. UVLO threshold ~2.3V with 0.1V hysteresis."       }     ],     "provenance": {@@ -120,5 +120,8 @@     "docs/sy6280aac-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file