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SWP160R12VT

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by adom

Samwin MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWP160R12VT

Samwin · MOSFETs · TO-220

SWP160R12VT from Samwin, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with VGS limited to ±20 V and threshold voltage of 1.3 V min to 2.3 V max at ID=250uA.
2 Drain passive Drain terminal with VDSS of 120 V and continuous drain current of 50 A at TC=25°C (pulsed 200 A).
3 Source passive Source terminal of the MOSFET, with continuous body-diode source current of 50 A and pulsed source current of 200 A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 120 V 1
Continuous drain current ID 50 A TC=25°C, limited by junction temperature 1
Continuous drain current ID 32 A TC=100°C, limited by junction temperature 1
Drain current pulsed IDM 200 A note 1 1
Gate to source voltage VGS -20 20 V 1
Single pulsed avalanche energy EAS 207 mJ note 2 1
Repetitive avalanche energy EAR 22 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 176 W Tc=25°C 1
Operating junction and storage temperature TSTG, TJ -55 150 °C 1
Maximum lead temperature for soldering TL 300 °C 1/8 from case for 5 seconds 1
Thermal resistance, junction to case Rthjc 0.71 °C/W 1
Thermal resistance, junction to ambient Rthja 52 °C/W 1
Drain to source breakdown voltage BVDSS 120 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=120V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=96V, TC=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=20V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-20V, VDS=0V 2
Gate threshold voltage VGS(TH) 1.3 2.3 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 16.4 21 mΩ VGS=4.5V, ID=25A 2
Drain to source on state resistance RDS(ON) 14.6 18 mΩ VGS=10V, ID=25A 2
Drain to source on state resistance RDS(ON) 14.9 19 mΩ VGS=10V, ID=50A 2
Continuous source current IS 50 A Integral reverse p-n junction diode in the MOSFET 2
Pulsed source current ISM 200 A 2
Diode forward voltage drop VSD 1.4 V IS=50A, VGS=0V 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.15 V/°C ID=250uA, referenced to 25°C 2
Forward transconductance Gfs 79 S VDS=5V, ID=25A 2
Input capacitance Ciss 2840 pF VGS=0V, VDS=60V, f=1MHz 2
Output capacitance Coss 211 pF VGS=0V, VDS=60V, f=1MHz 2
Reverse transfer capacitance Crss 136 pF VGS=0V, VDS=60V, f=1MHz 2
Turn on delay time td(on) 18 ns VDS=60V, ID=30A, RG=25Ω, VGS=10V 2
Rising time tr 65 ns VDS=60V, ID=30A, RG=25Ω, VGS=10V 2
Turn off delay time td(off) 178 ns VDS=60V, ID=30A, RG=25Ω, VGS=10V 2
Fall time tf 130 ns VDS=60V, ID=30A, RG=25Ω, VGS=10V 2
Total gate charge Qg 64 nC VDS=96V, VGS=10V, ID=30A, Ig=4mA 2
Gate-source charge Qgs 9 nC VDS=96V, VGS=10V, ID=30A, Ig=4mA 2
Gate-drain charge Qgd 24 nC VDS=96V, VGS=10V, ID=30A, Ig=4mA 2
Gate resistance Rg 1.1 Ω VDS=0V, Scan F mode 2
Reverse recovery time trr 52 ns IS=30A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 79 nC IS=30A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWP160R12VT
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: swp160r12vt-etched.step / swp160r12vt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swp160r12vt.step / swp160r12vt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 f6462808a1a0e848, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF