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SWP078R08ET

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by adom

Samwin MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWP078R08ET

Samwin · MOSFETs · TO-220

SWP078R08ET from Samwin, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with gate-to-source voltage limited to ±20 V and threshold VGS(TH) of 2 to 4 V at ID=250uA.
2 Drain passive Drain terminal, rated for 80 V drain-to-source (VDSS) and 60 A continuous current (limited by junction temperature), 240 A pulsed.
3 Source passive Source terminal of the MOSFET, carrying up to 60 A continuous body-diode/source current (IS) and 240 A pulsed (ISM).

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source breakdown voltage BVDSS 80 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=80V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=64V, TJ=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=20V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-20V, VDS=0V 2
Gate threshold voltage VGS(TH) 2 4 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 7.8 9.7 mΩ VGS=10V, ID=30A, TJ=25oC 2
Drain to source on state resistance RDS(ON) 7.9 9.9 mΩ VGS=10V, ID=60A, TJ=25oC 2
Source to drain diode forward voltage drop VSD 1.4 V IS=60A, VGS=0V 2
Continuous source current IS 60 A Integral reverse p-n Junction diode in the MOSFET 2
Pulsed source current ISM 240 A 2
Drain to source voltage VDSS 80 V 1
Continuous drain current ID 60 A TC=25oC; limited by junction temperature 1
Continuous drain current ID 50 A TC=100oC; limited by junction temperature 1
Drain current pulsed IDM 240 A note 1 1
Gate to source voltage VGS -20 20 V 1
Single pulsed avalanche energy EAS 304 mJ note 2 1
Repetitive avalanche energy EAR 32 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 144 W TC=25oC, TO-220 1
Operating junction and storage temperature TSTG, TJ -55 150 oC 1
Maximum lead temperature for soldering TL 300 oC 1/8 from case for 5 seconds 1
Thermal resistance, junction to case Rthjc 0.87 oC/W TO-220 1
Thermal resistance, junction to ambient Rthja 53 oC/W 1
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.07 V/oC ID=250uA, referenced to 25oC 2
Drain to source on state resistance RDS(ON) 14 mΩ VGS=10V, ID=30A, TJ=125oC 2
Forward transconductance Gfs 90 S VDS=10V, ID=30A 2
Input capacitance Ciss 4060 pF VGS=0V, VDS=40V, f=1MHz 2
Output capacitance Coss 314 pF VGS=0V, VDS=40V, f=1MHz 2
Reverse transfer capacitance Crss 237 pF VGS=0V, VDS=40V, f=1MHz 2
Turn on delay time td(on) 21 ns VDS=40V, ID=30A, RG=4.7Ω, VGS=10V 2
Rising time tr 51 ns VDS=40V, ID=30A, RG=4.7Ω, VGS=10V 2
Turn off delay time td(off) 49 ns VDS=40V, ID=30A, RG=4.7Ω, VGS=10V 2
Fall time tf 26 ns VDS=40V, ID=30A, RG=4.7Ω, VGS=10V 2
Total gate charge Qg 79 nC VDS=64V, VGS=10V, ID=30A 2
Gate-source charge Qgs 19 nC VDS=64V, VGS=10V, ID=30A 2
Gate-drain charge Qgd 29 nC VDS=64V, VGS=10V, ID=30A 2
Gate resistance Rg 1.3 Ω VDS=0V, Scan F mode 2
Reverse recovery time trr 33 ns IS=30A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 36 nC IS=30A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWP078R08ET
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: swp078r08et-etched.step / swp078r08et-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swp078r08et.step / swp078r08et.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 2c6e764d5ee4125c, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF