component
SWP068R68E7T
Public Made by Adomby adom
Samwin MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SWP068R68E7T
Samwin · MOSFETs · TO-220
SWP068R68E7T from Samwin, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, rated for a gate-to-source voltage of ±20 V with a threshold of 2 to 4 V. |
| 2 | Drain | passive | Drain terminal, rated for 68 V drain-to-source voltage and 90 A continuous drain current (limited by junction temperature) at TC=25°C. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, with a continuous body-diode source current of 90 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source breakdown voltage | BVDSS | 68 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=68V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=54V, TJ=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 6.8 | 8.1 | mΩ | VGS=10V, ID=40A,TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 11 | mΩ | VGS=10V, ID=40A,TJ=125oC | 2 | ||
| Continuous source current | IS | 90 | A | Integral reverse p-n Junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 360 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.4 | V | IS=30A, VGS=0V | 2 | ||
| Drain to source voltage | VDSS | 68 | V | 1 | |||
| Continuous drain current | ID | 90 | A | TC=25oC; limited by junction temperature | 1 | ||
| Continuous drain current | ID | 70 | A | TC=100oC; limited by junction temperature | 1 | ||
| Drain current pulsed | IDM | 360 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -20 | 20 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 210 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 21 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 178.6 | W | TC=25oC | 1 | ||
| Operating junction and storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | oC | 1/8 from case for 5 seconds | 1 | ||
| Thermal resistance, Junction to case | Rthjc | 0.7 | oC/W | 1 | |||
| Thermal resistance, Junction to ambient | Rthja | 46 | oC/W | 1 | |||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.06 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Forward transconductance | Gfs | 39 | S | VDS=10V, ID=30A | 2 | ||
| Input capacitance | Ciss | 4060 | pF | VGS=0V, VDS=34V, f=1MHz | 2 | ||
| Output capacitance | Coss | 244 | pF | VGS=0V, VDS=34V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 228 | pF | VGS=0V, VDS=34V, f=1MHz | 2 | ||
| Turn on delay time | td(on) | 27 | ns | VDS=34V, ID=30A, RG=4.7Ω, VGS=10V | 2 | ||
| Rising time | tr | 74 | ns | VDS=34V, ID=30A, RG=4.7Ω, VGS=10V | 2 | ||
| Turn off delay time | td(off) | 63 | ns | VDS=34V, ID=30A, RG=4.7Ω, VGS=10V | 2 | ||
| Fall time | tf | 29 | ns | VDS=34V, ID=30A, RG=4.7Ω, VGS=10V | 2 | ||
| Total gate charge | Qg | 78 | nC | VDS=54V, VGS=10V, ID=30A, IG=5mA | 2 | ||
| Gate-source charge | Qgs | 25 | nC | VDS=54V, VGS=10V, ID=30A, IG=5mA | 2 | ||
| Gate-drain charge | Qgd | 29 | nC | VDS=54V, VGS=10V, ID=30A, IG=5mA | 2 | ||
| Gate resistance | Rg | 6 | Ω | VDS=0V, Scan F mode | 2 | ||
| Reverse recovery time | trr | 34 | ns | IS=30A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Reverse recovery charge | Qrr | 44 | nC | IS=30A, VGS=0V, dIF/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
SWP068R68E7T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
swp068r68e7t-etched.step/swp068r68e7t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swp068r68e7t.step/swp068r68e7t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
3b57ae98fd14b08e, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SWP068R68E7T
**Samwin** · MOSFETs · TO-220
SWP068R68E7T from Samwin, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, rated for a gate-to-source voltage of ±20 V with a threshold of 2 to 4 V. |
| 2 | Drain | passive | Drain terminal, rated for 68 V drain-to-source voltage and 90 A continuous drain current (limited by junction temperature) at TC=25°C. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, with a continuous body-diode source current of 90 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source breakdown voltage | BVDSS | 68 | | | V | VGS=0V, ID=250uA | 2 |
| Drain to source leakage current | IDSS | | | 1 | uA | VDS=68V, VGS=0V | 2 |
| Drain to source leakage current | IDSS | | | 50 | uA | VDS=54V, TJ=125oC | 2 |
| Gate to source leakage current, forward | IGSS | | | 100 | nA | VGS=20V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS | -100 | | | nA | VGS=-20V, VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | 2 | | 4 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) | | 6.8 | 8.1 | mΩ | VGS=10V, ID=40A,TJ=25oC | 2 |
| Drain to source on state resistance | RDS(ON) | | | 11 | mΩ | VGS=10V, ID=40A,TJ=125oC | 2 |
| Continuous source current | IS | | | 90 | A | Integral reverse p-n Junction diode in the MOSFET | 2 |
| Pulsed source current | ISM | | | 360 | A | | 2 |
| Diode forward voltage drop | VSD | | | 1.4 | V | IS=30A, VGS=0V | 2 |
| Drain to source voltage | VDSS | | | 68 | V | | 1 |
| Continuous drain current | ID | | | 90 | A | TC=25oC; limited by junction temperature | 1 |
| Continuous drain current | ID | | | 70 | A | TC=100oC; limited by junction temperature | 1 |
| Drain current pulsed | IDM | | | 360 | A | note 1 | 1 |
| Gate to source voltage | VGS | -20 | | 20 | V | | 1 |
| Single pulsed avalanche energy | EAS | | | 210 | mJ | note 2 | 1 |
| Repetitive avalanche energy | EAR | | | 21 | mJ | note 1 | 1 |
| Peak diode recovery dv/dt | dv/dt | | | 5 | V/ns | note 3 | 1 |
| Total power dissipation | PD | | | 178.6 | W | TC=25oC | 1 |
| Operating junction and storage temperature | TSTG, TJ | -55 | | 150 | oC | | 1 |
| Maximum lead temperature for soldering | TL | | | 300 | oC | 1/8 from case for 5 seconds | 1 |
| Thermal resistance, Junction to case | Rthjc | | | 0.7 | oC/W | | 1 |
| Thermal resistance, Junction to ambient | Rthja | | | 46 | oC/W | | 1 |
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | | 0.06 | | V/oC | ID=250uA, referenced to 25oC | 2 |
| Forward transconductance | Gfs | | 39 | | S | VDS=10V, ID=30A | 2 |
| Input capacitance | Ciss | | 4060 | | pF | VGS=0V, VDS=34V, f=1MHz | 2 |
| Output capacitance | Coss | | 244 | | pF | VGS=0V, VDS=34V, f=1MHz | 2 |
| Reverse transfer capacitance | Crss | | 228 | | pF | VGS=0V, VDS=34V, f=1MHz | 2 |
| Turn on delay time | td(on) | | 27 | | ns | VDS=34V, ID=30A, RG=4.7Ω, VGS=10V | 2 |
| Rising time | tr | | 74 | | ns | VDS=34V, ID=30A, RG=4.7Ω, VGS=10V | 2 |
| Turn off delay time | td(off) | | 63 | | ns | VDS=34V, ID=30A, RG=4.7Ω, VGS=10V | 2 |
| Fall time | tf | | 29 | | ns | VDS=34V, ID=30A, RG=4.7Ω, VGS=10V | 2 |
| Total gate charge | Qg | | 78 | | nC | VDS=54V, VGS=10V, ID=30A, IG=5mA | 2 |
| Gate-source charge | Qgs | | 25 | | nC | VDS=54V, VGS=10V, ID=30A, IG=5mA | 2 |
| Gate-drain charge | Qgd | | 29 | | nC | VDS=54V, VGS=10V, ID=30A, IG=5mA | 2 |
| Gate resistance | Rg | | 6 | | Ω | VDS=0V, Scan F mode | 2 |
| Reverse recovery time | trr | | 34 | | ns | IS=30A, VGS=0V, dIF/dt=100A/us | 2 |
| Reverse recovery charge | Qrr | | 44 | | nC | IS=30A, VGS=0V, dIF/dt=100A/us | 2 |
## CAD (KiCad official)
- Symbol: `SWP068R68E7T`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `swp068r68e7t-etched.step` / `swp068r68e7t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `swp068r68e7t.step` / `swp068r68e7t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Samwin datasheet](docs/swp068r68e7t-datasheet.pdf) (6 pp, sha256 `3b57ae98fd14b08e`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/swp068r68e7t-datasheet.pdf)