component
SWP062R68E7T
Public Made by Adomby adom
Samwin MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 10d ago |
| viewers | 10d ago |
| package.json | 10d ago |
| page.json | 10d ago |
| README.md | 10d ago |
| swp062r68e7t-etched.glb | 10d ago |
| swp062r68e7t-etched.step | 10d ago |
| swp062r68e7t-hero.glb | 10d ago |
| swp062r68e7t-hero.overlay.json | 10d ago |
| swp062r68e7t.glb | 10d ago |
| swp062r68e7t.kicad_mod | 10d ago |
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| swp062r68e7t.lbr | 10d ago |
| swp062r68e7t.step | 10d ago |
SWP062R68E7T
Samwin · MOSFETs · TO-220
SWP062R68E7T from Samwin, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel enhancement-mode MOSFET; the gate-to-source voltage is rated at ±20 V. |
| 2 | Drain | passive | Drain terminal of the MOSFET; the drain-to-source voltage is rated at 68 V and continuous drain current at 100 A (TC = 25 °C, limited by junction temperature). |
| 3 | Source | passive | Source terminal of the MOSFET; the integral body diode is rated at 100 A continuous and 400 A pulsed source current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | 68 | V | 1 | |||
| Continuous drain current (@TC=25oC) | ID | 100 | A | @TC=25oC; limited by junction temperature | 1 | ||
| Continuous drain current (@TC=100oC) | ID | 76 | A | @TC=100oC; limited by junction temperature | 1 | ||
| Drain current pulsed | IDM | 400 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -20 | 20 | V | printed as ± 20 V | 1 | |
| Single pulsed avalanche energy | EAS | 240 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 24 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation (@TC=25oC) | PD | 195.3 | W | @TC=25oC | 1 | ||
| Derating factor above 25oC | 1.56 | W/oC | above 25oC | 1 | |||
| Operating junction temperature & storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Maximum lead temperature for soldering purpose | TL | 300 | oC | 1/8 from case for 5 seconds | 1 | ||
| Thermal resistance, Junction to case | Rthjc | 0.64 | oC/W | 1 | |||
| Thermal resistance, Junction to ambient | Rthja | 53 | oC/W | 1 | |||
| Gate threshold voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 6.2 | 7.2 | mΩ | VGS=10V, ID=40A, TJ=25oC | 2 |
CAD (KiCad official)
- Symbol:
SWP062R68E7T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
swp062r68e7t-etched.step/swp062r68e7t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swp062r68e7t.step/swp062r68e7t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
febc70ace3d09f91, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).