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SWP046R08E8T

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Samwin MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWP046R08E8T

Samwin · MOSFETs · TO-220

SWP046R08E8T from Samwin, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with gate-to-source voltage limited to ±20 V and threshold voltage of 2 V min to 4 V max at ID=250uA.
2 Drain passive Drain terminal with drain-to-source voltage rating of 80 V and continuous drain current of 150 A at TC=25°C (limited by junction temperature).
3 Source passive Source terminal of the MOSFET, with continuous body-diode source current of 150 A and pulsed source current of 600 A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source breakdown voltage BVDSS 80 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=80V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=64V, TJ=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=20V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-20V, VDS=0V 2
Gate threshold voltage VGS(TH) 2 4 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 4.8 5.9 mΩ VGS=10V, ID=30A,TJ=25oC 2
Drain to source on state resistance RDS(ON) 8.3 mΩ VGS=10V, ID=30A,TJ=125oC 2
Continuous source current IS 150 A Integral reverse p-n Junction diode in the MOSFET 2
Pulsed source current ISM 600 A 2
Diode forward voltage drop VSD 1.4 V IS=45A, VGS=0V 2
Drain to source voltage VDSS 80 V 1
Continuous drain current ID 150 A @TC=25oC; limited by junction temperature 1
Continuous drain current ID 102 A @TC=100oC; limited by junction temperature 1
Drain current pulsed IDM 600 A note 1 1
Gate to source voltage VGS -20 20 V 1
Single pulsed avalanche energy EAS 361 mJ note 2 1
Repetitive avalanche energy EAR 30 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 227.3 W @TC=25oC 1
Operating junction temperature & storage temperature TSTG, TJ -55 150 oC 1
Maximum lead temperature for soldering TL 300 oC 1/8 from case for 5 seconds 1
Thermal resistance, Junction to case Rthjc 0.55 oC/W 1
Thermal resistance, Junction to ambient Rthja 50.5 oC/W 1
Derating factor above 25oC 1.8 W/oC 1
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.06 V/oC ID=250uA, referenced to 25oC 2
Forward transconductance Gfs 60 S VDS=5V, ID=30A 2
Input capacitance Ciss 8422 pF VGS=0V, VDS=40V, f=1MHz 2
Output capacitance Coss 660 pF VGS=0V, VDS=40V, f=1MHz 2
Reverse transfer capacitance Crss 401 pF VGS=0V, VDS=40V, f=1MHz 2
Turn on delay time td(on) 36 ns VDS=40V, ID=30A, RG=4.7Ω, VGS=10V 2
Rising time tr 85 ns VDS=40V, ID=30A, RG=4.7Ω, VGS=10V 2
Turn off delay time td(off) 154 ns VDS=40V, ID=30A, RG=4.7Ω, VGS=10V 2
Fall time tf 63 ns VDS=40V, ID=30A, RG=4.7Ω, VGS=10V 2
Total gate charge Qg 183 nC VDS=64V, VGS=10V, ID=30A, IG=10mA 2
Gate-source charge Qgs 42 nC VDS=64V, VGS=10V, ID=30A, IG=10mA 2
Gate-drain charge Qgd 67 nC VDS=64V, VGS=10V, ID=30A, IG=10mA 2
Gate resistance Rg 3.2 Ω VDS=0V, Scan F mode 2
Reverse recovery time trr 46 ns IS=30A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 83 nC IS=30A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWP046R08E8T
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: swp046r08e8t-etched.step / swp046r08e8t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swp046r08e8t.step / swp046r08e8t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 87557ec5ea55ab88, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF