# SWK200R10VT

**Samwin** · MOSFETs · SOP-8

SWK200R10VT from Samwin, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the N-channel MOSFET (pins 1, 2, 3 are source); drain-source voltage rated 100 V. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET (pins 1, 2, 3 are source); drain-source voltage rated 100 V. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET (pins 1, 2, 3 are source); drain-source voltage rated 100 V. |
| 4 | Gate | input | Gate terminal of the MOSFET with gate-to-source voltage limit of ±20 V and threshold 1.5 V min to 2.5 V max at ID=250uA. |
| 5 | Drain | passive | Drain terminal (pins 5, 6, 7, 8 are drain); 100 V VDSS, continuous drain current 7 A at Ta=25°C. |
| 6 | Drain | passive | Drain terminal (pins 5, 6, 7, 8 are drain); 100 V VDSS, continuous drain current 7 A at Ta=25°C. |
| 7 | Drain | passive | Drain terminal (pins 5, 6, 7, 8 are drain); 100 V VDSS, continuous drain current 7 A at Ta=25°C. |
| 8 | Drain | passive | Drain terminal (pins 5, 6, 7, 8 are drain); 100 V VDSS, continuous drain current 7 A at Ta=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS |  |  | 100 | V |  | 1 |
| Continuous drain current | ID |  |  | 7 | A | Ta=25°C | 1 |
| Continuous drain current | ID |  |  | 6 | A | Ta=70°C | 1 |
| Drain current pulsed | IDM |  |  | 28 | A | note 1 | 1 |
| Gate to source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Single pulsed avalanche energy | EAS |  |  | 72 | mJ | note 2 | 1 |
| Repetitive avalanche energy | EAR |  |  | 11 | mJ | note 1 | 1 |
| Peak diode recovery dv/dt | dv/dt |  |  | 5 | V/ns | note 3 | 1 |
| Total power dissipation | PD |  |  | 2.9 | W | Ta=25°C | 1 |
| Operating junction and storage temperature | TSTG, TJ | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, junction to ambient | Rthja |  |  | 43 | °C/W | 1 in2 pad of 2oz copper | 1 |
| Drain to source breakdown voltage | BVDSS | 100 |  |  | V | VGS=0V, ID=250uA | 2 |
| Drain to source leakage current | IDSS |  |  | 1 | uA | VDS=100V, VGS=0V | 2 |
| Drain to source leakage current | IDSS |  |  | 50 | uA | VDS=80V, TJ=125oC | 2 |
| Gate to source leakage current, forward | IGSS |  |  | 100 | nA | VGS=20V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS | -100 |  |  | nA | VGS=-20V, VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | 1.5 |  | 2.5 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) |  | 20.6 | 25.8 | mΩ | VGS=4.5V, ID=4A, TJ=25oC | 2 |
| Drain to source on state resistance | RDS(ON) |  | 20 | 25 | mΩ | VGS=10V, ID=4A, TJ=25oC | 2 |
| Drain to source on state resistance | RDS(ON) |  | 35 |  | mΩ | VGS=4.5V, ID=4A, TJ=125oC | 2 |
| Drain to source on state resistance | RDS(ON) |  | 34 |  | mΩ | VGS=10V, ID=4A, TJ=125oC | 2 |
| Continuous source current | IS |  |  | 7 | A | Integral reverse p-n junction diode in the MOSFET | 2 |
| Pulsed source current | ISM |  |  | 28 | A |  | 2 |
| Diode forward voltage drop | VSD |  |  | 1.4 | V | IS=7A, VGS=0V | 2 |
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ |  | 0.07 |  | V/oC | ID=250uA, referenced to 25oC | 2 |
| Forward transconductance | Gfs |  | 27 |  | S | VDS=10V, ID=4A | 2 |
| Input capacitance | Ciss |  | 4410 |  | pF | VGS=0V, VDS=50V, f=1MHz | 2 |
| Output capacitance | Coss |  | 165 |  | pF | VGS=0V, VDS=50V, f=1MHz | 2 |
| Reverse transfer capacitance | Crss |  | 153 |  | pF | VGS=0V, VDS=50V, f=1MHz | 2 |
| Turn on delay time | td(on) |  | 19 |  | ns | VDS=50V, ID=7A, RG=4.7Ω, VGS=10V | 2 |
| Rising time | tr |  | 31 |  | ns | VDS=50V, ID=7A, RG=4.7Ω, VGS=10V | 2 |
| Turn off delay time | td(off) |  | 95 |  | ns | VDS=50V, ID=7A, RG=4.7Ω, VGS=10V | 2 |
| Fall time | tf |  | 25 |  | ns | VDS=50V, ID=7A, RG=4.7Ω, VGS=10V | 2 |
| Total gate charge | Qg |  | 89 |  | nC | VDS=80V, VGS=10V, ID=7A | 2 |
| Gate-source charge | Qgs |  | 12 |  | nC | VDS=80V, VGS=10V, ID=7A | 2 |
| Gate-drain charge | Qgd |  | 19 |  | nC | VDS=80V, VGS=10V, ID=7A | 2 |
| Gate resistance | Rg |  | 1.5 |  | Ω | VDS=0V, Scan F mode | 2 |
| Reverse recovery time | trr |  | 36 |  | ns | IS=7A, VGS=0V, dIF/dt=100A/us | 2 |
| Reverse recovery charge | Qrr |  | 47 |  | nC | IS=7A, VGS=0V, dIF/dt=100A/us | 2 |

## CAD (KiCad official)

- Symbol: `SWK200R10VT`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `swk200r10vt-etched.step` / `swk200r10vt-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `swk200r10vt.step` / `swk200r10vt.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Samwin datasheet](docs/swk200r10vt-datasheet.pdf) (6 pp, sha256 `4607d83dfd4b8ecc`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/swk200r10vt-datasheet.pdf)