component
SWK083R06VSM
Public Made by Adomby adom
Samwin MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSWK083R06VSM
Samwin · MOSFETs · SOP-8
SWK083R06VSM from Samwin, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source of the N-channel MOSFET, pins 1, 2 and 3 are tied together as source. |
| 2 | Source | passive | Source of the N-channel MOSFET, pins 1, 2 and 3 are tied together as source. |
| 3 | Source | passive | Source of the N-channel MOSFET, pins 1, 2 and 3 are tied together as source. |
| 4 | Gate | input | Gate of the N-channel MOSFET, with a gate-to-source voltage rating of ±20 V. |
| 5 | Drain | passive | Drain of the N-channel MOSFET, pins 5 to 8 are tied together as drain, with VDSS of 60 V. |
| 6 | Drain | passive | Drain of the N-channel MOSFET, pins 5 to 8 are tied together as drain, with VDSS of 60 V. |
| 7 | Drain | passive | Drain of the N-channel MOSFET, pins 5 to 8 are tied together as drain, with VDSS of 60 V. |
| 8 | Drain | passive | Drain of the N-channel MOSFET, pins 5 to 8 are tied together as drain, with VDSS of 60 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source breakdown voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=60V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=48V, TJ=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 1.4 | 2 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 12 | 14.5 | mΩ | VGS=4.5V, ID=10A,TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 9.5 | 11.5 | mΩ | VGS=10V, ID=10A,TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 14 | mΩ | VGS=10V, ID=10A,TJ=125oC | 2 | ||
| Continuous source current | IS | 10 | A | Integral reverse p-n Junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 40 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.4 | V | IS=10A, VGS=0V | 2 | ||
| Drain to source voltage | VDSS | 60 | V | 1 | |||
| Continuous drain current | ID | 10 | A | Ta=25oC; limited by junction temperature | 1 | ||
| Continuous drain current | ID | 9 | A | Ta=70oC; limited by junction temperature | 1 | ||
| Drain current pulsed | IDM | 40 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -20 | 20 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 95 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 9 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 2.4 | W | Ta=25oC | 1 | ||
| Operating junction and storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Thermal resistance, junction to ambient | Rthja | 52.4 | oC/W | 1 in2 pad of 2oz copper | 1 | ||
| Derating factor above 25oC | 0.02 | W/oC | 1 | ||||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.03 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Forward transconductance | Gfs | 32 | S | VDS=5V, ID=10A | 2 | ||
| Input capacitance | Ciss | 1068 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Output capacitance | Coss | 354 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 13 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Turn on delay time | td(on) | 5 | ns | VDS=30V, ID=10A, RG=4.7Ω, VGS=10V | 2 | ||
| Rising time | tr | 34 | ns | VDS=30V, ID=10A, RG=4.7Ω, VGS=10V | 2 | ||
| Turn off delay time | td(off) | 24 | ns | VDS=30V, ID=10A, RG=4.7Ω, VGS=10V | 2 | ||
| Fall time | tf | 8 | ns | VDS=30V, ID=10A, RG=4.7Ω, VGS=10V | 2 | ||
| Total gate charge | Qg | 18 | nC | VDS=48V, VGS=10V, ID=10A, IG=3mA | 2 | ||
| Gate-source charge | Qgs | 2.2 | nC | VDS=48V, VGS=10V, ID=10A, IG=3mA | 2 | ||
| Gate-drain charge | Qgd | 4 | nC | VDS=48V, VGS=10V, ID=10A, IG=3mA | 2 | ||
| Gate resistance | Rg | 1.8 | Ω | VDS=0V, Scan F mode | 2 | ||
| Reverse recovery time | trr | 29 | ns | IS=10A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Reverse recovery charge | Qrr | 14 | nC | IS=10A, VGS=0V, dIF/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
SWK083R06VSM - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
swk083r06vsm-etched.step/swk083r06vsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swk083r06vsm.step/swk083r06vsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
6607553f18e0254c, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).