component
SWK083R06VLS
Public Made by Adomby adom
Samwin MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SWK083R06VLS
Samwin · MOSFETs · SOP-8
SWK083R06VLS from Samwin, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source pin (pins 1,2,3 are Source) of the N-channel MOSFET; the body diode conducts continuous source current up to 10 A. |
| 2 | S | passive | Source pin (pins 1,2,3 are Source) of the N-channel MOSFET; the body diode conducts continuous source current up to 10 A. |
| 3 | S | passive | Source pin (pins 1,2,3 are Source) of the N-channel MOSFET; the body diode conducts continuous source current up to 10 A. |
| 4 | G | input | Gate pin of the N-channel MOSFET with a gate-to-source voltage rating of ±20 V. |
| 5 | D | passive | Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 60 V and continuous drain current of 10 A at Ta=25°C. |
| 6 | D | passive | Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 60 V and continuous drain current of 10 A at Ta=25°C. |
| 7 | D | passive | Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 60 V and continuous drain current of 10 A at Ta=25°C. |
| 8 | D | passive | Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 60 V and continuous drain current of 10 A at Ta=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source breakdown voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=60V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=48V, TJ=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 1.4 | 2.5 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 13 | 15.5 | mΩ | VGS=4.5V, ID=10A,TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 9.7 | 11.5 | mΩ | VGS=10V, ID=13.5A,TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 14.3 | mΩ | VGS=10V, ID=13.5A,TJ=125oC | 2 | ||
| Continuous source current | IS | 10 | A | Integral reverse p-n Junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 40 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.4 | V | IS=13.5A, VGS=0V | 2 | ||
| Drain to source voltage | VDSS | 60 | V | 1 | |||
| Continuous drain current | ID | 10 | A | Ta=25oC | 1 | ||
| Continuous drain current | ID | 9 | A | Ta=70oC | 1 | ||
| Drain current pulsed | IDM | 40 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -20 | 20 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 36 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 3 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 2 | W | Ta=25oC | 1 | ||
| Operating junction temperature & storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Thermal resistance, Junction to ambient | Rthja | 61.8 | oC/W | 1 in2 pad of 2oz copper | 1 | ||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.02 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Forward transconductance | Gfs | 36 | S | VDS=5V, ID=13.5A | 2 | ||
| Input capacitance | Ciss | 1279 | pF | VGS=0V, VDS=30V, f=100kHz | 2 | ||
| Output capacitance | Coss | 479 | pF | VGS=0V, VDS=30V, f=100kHz | 2 | ||
| Reverse transfer capacitance | Crss | 10 | pF | VGS=0V, VDS=30V, f=100kHz | 2 | ||
| Total gate charge | Qg | 22 | nC | VDS=48V, VGS=10V, ID=10A, Ig=3mA | 2 | ||
| Gate resistance | Rg | 1.8 | Ω | VDS=0V, Scan F mode | 2 |
CAD (KiCad official)
- Symbol:
SWK083R06VLS - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
swk083r06vls-etched.step/swk083r06vls-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swk083r06vls.step/swk083r06vls.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
35d72a5768d5cdd5, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SWK083R06VLS
**Samwin** · MOSFETs · SOP-8
SWK083R06VLS from Samwin, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source pin (pins 1,2,3 are Source) of the N-channel MOSFET; the body diode conducts continuous source current up to 10 A. |
| 2 | S | passive | Source pin (pins 1,2,3 are Source) of the N-channel MOSFET; the body diode conducts continuous source current up to 10 A. |
| 3 | S | passive | Source pin (pins 1,2,3 are Source) of the N-channel MOSFET; the body diode conducts continuous source current up to 10 A. |
| 4 | G | input | Gate pin of the N-channel MOSFET with a gate-to-source voltage rating of ±20 V. |
| 5 | D | passive | Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 60 V and continuous drain current of 10 A at Ta=25°C. |
| 6 | D | passive | Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 60 V and continuous drain current of 10 A at Ta=25°C. |
| 7 | D | passive | Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 60 V and continuous drain current of 10 A at Ta=25°C. |
| 8 | D | passive | Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 60 V and continuous drain current of 10 A at Ta=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source breakdown voltage | BVDSS | 60 | | | V | VGS=0V, ID=250uA | 2 |
| Drain to source leakage current | IDSS | | | 1 | uA | VDS=60V, VGS=0V | 2 |
| Drain to source leakage current | IDSS | | | 50 | uA | VDS=48V, TJ=125oC | 2 |
| Gate to source leakage current, forward | IGSS | | | 100 | nA | VGS=20V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS | -100 | | | nA | VGS=-20V, VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | 1.4 | | 2.5 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) | | 13 | 15.5 | mΩ | VGS=4.5V, ID=10A,TJ=25oC | 2 |
| Drain to source on state resistance | RDS(ON) | | 9.7 | 11.5 | mΩ | VGS=10V, ID=13.5A,TJ=25oC | 2 |
| Drain to source on state resistance | RDS(ON) | | | 14.3 | mΩ | VGS=10V, ID=13.5A,TJ=125oC | 2 |
| Continuous source current | IS | | | 10 | A | Integral reverse p-n Junction diode in the MOSFET | 2 |
| Pulsed source current | ISM | | | 40 | A | | 2 |
| Diode forward voltage drop | VSD | | | 1.4 | V | IS=13.5A, VGS=0V | 2 |
| Drain to source voltage | VDSS | | | 60 | V | | 1 |
| Continuous drain current | ID | | | 10 | A | Ta=25oC | 1 |
| Continuous drain current | ID | | | 9 | A | Ta=70oC | 1 |
| Drain current pulsed | IDM | | | 40 | A | note 1 | 1 |
| Gate to source voltage | VGS | -20 | | 20 | V | | 1 |
| Single pulsed avalanche energy | EAS | | | 36 | mJ | note 2 | 1 |
| Repetitive avalanche energy | EAR | | | 3 | mJ | note 1 | 1 |
| Peak diode recovery dv/dt | dv/dt | | | 5 | V/ns | note 3 | 1 |
| Total power dissipation | PD | | | 2 | W | Ta=25oC | 1 |
| Operating junction temperature & storage temperature | TSTG, TJ | -55 | | 150 | oC | | 1 |
| Thermal resistance, Junction to ambient | Rthja | | | 61.8 | oC/W | 1 in2 pad of 2oz copper | 1 |
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | | 0.02 | | V/oC | ID=250uA, referenced to 25oC | 2 |
| Forward transconductance | Gfs | | 36 | | S | VDS=5V, ID=13.5A | 2 |
| Input capacitance | Ciss | | 1279 | | pF | VGS=0V, VDS=30V, f=100kHz | 2 |
| Output capacitance | Coss | | 479 | | pF | VGS=0V, VDS=30V, f=100kHz | 2 |
| Reverse transfer capacitance | Crss | | 10 | | pF | VGS=0V, VDS=30V, f=100kHz | 2 |
| Total gate charge | Qg | | 22 | | nC | VDS=48V, VGS=10V, ID=10A, Ig=3mA | 2 |
| Gate resistance | Rg | | 1.8 | | Ω | VDS=0V, Scan F mode | 2 |
## CAD (KiCad official)
- Symbol: `SWK083R06VLS`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `swk083r06vls-etched.step` / `swk083r06vls-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `swk083r06vls.step` / `swk083r06vls.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Samwin datasheet](docs/swk083r06vls-datasheet.pdf) (6 pp, sha256 `35d72a5768d5cdd5`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/swk083r06vls-datasheet.pdf)