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SWI8N65DB

Public Made by Adom

by adom

Samwin MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWI8N65DB

Samwin · MOSFETs · TO-251

SWI8N65DB from Samwin, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET; the gate-to-source voltage is rated ±30 V.
2 Drain passive Drain terminal of the MOSFET; the drain-to-source voltage is rated 650 V (BVDSS).
3 Source passive Source terminal of the MOSFET; the integral reverse p-n junction diode is rated at 8 A continuous source current.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-251
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 650 V 1
Continuous drain current ID 8 A @TC=25oC 1
Continuous drain current ID 5 A @TC=100oC 1
Drain current pulsed IDM 32 A note 1 1
Gate to source voltage VGS -30 30 V 1
Single pulsed avalanche energy EAS 384 mJ note 2 1
Repetitive avalanche energy EAR 23 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 178.6 W @TC=25oC 1
Derating factor above 25oC 1.43 W/oC above 25oC 1
Operating junction and storage temperature TSTG, TJ -55 150 oC 1
Maximum lead temperature for soldering TL 300 oC 1/8 from case for 5 seconds 1
Thermal resistance, junction to case Rthjc 0.7 oC/W 1
Thermal resistance, junction to ambient Rthja 90 oC/W 1
Drain to source breakdown voltage BVDSS 650 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=650V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=520V, TC=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Gate threshold voltage VGS(TH) 2.5 4.5 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 1 1.2 Ω VGS=10V, ID=4A 2
Forward transconductance Gfs 7 S VDS=30V, ID=4A 2
Input capacitance Ciss 1770 pF VGS=0V, VDS=25V, f=1MHz 2
Output capacitance Coss 126 pF VGS=0V, VDS=25V, f=1MHz 2
Reverse transfer capacitance Crss 13 pF VGS=0V, VDS=25V, f=1MHz 2
Total gate charge Qg 34 nC VDS=520V, VGS=10V, ID=8A (note 4,5) 2

CAD (KiCad official)

  • Symbol: SWI8N65DB
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: swi8n65db-etched.step / swi8n65db-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swi8n65db.step / swi8n65db.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (7 pp, sha256 c2ea79e2637d31af, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF