component
SWI069R10VS
Public Made by Adomby adom
Samwin MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSWI069R10VS
Samwin · MOSFETs · TO-251
SWI069R10VS from Samwin, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated ±20 V. |
| 2 | Drain | passive | Drain terminal; drain-to-source voltage is rated 100 V and continuous drain current is 70 A at TC=25oC, limited by junction temperature. |
| 3 | Source | passive | Source terminal and reference for the gate-to-source voltage, rated ±20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-251 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | 100 | V | 1 | |||
| Continuous drain current (@TC=25oC) | ID | 70 | A | @TC=25oC | 1 | ||
| Continuous drain current (@TC=100oC) | ID | 56 | A | @TC=100oC | 1 | ||
| Drain current pulsed | IDM | 280 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -20 | 20 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 277 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 18 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 158 | W | @TC=25oC | 1 | ||
| Operating junction and storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | oC | 1/8 from case for 5 seconds | 1 | ||
| Thermal resistance, junction to case | Rthjc | 0.79 | oC/W | 1 | |||
| Thermal resistance, junction to ambient | Rthja | 74 | oC/W | 1 | |||
| Drain to source breakdown voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=100V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=80V, TJ=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 1.5 | 2.5 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 9 | 11 | mΩ | VGS=4.5V, ID=35A, TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 7.1 | 8.9 | mΩ | VGS=10V, ID=35A, TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 10.6 | mΩ | VGS=10V, ID=35A, TJ=125oC | 2 | ||
| Continuous source current | IS | 70 | A | Integral reverse p-n junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 280 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.4 | V | IS=70A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
SWI069R10VS - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
swi069r10vs-etched.step/swi069r10vs-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swi069r10vs.step/swi069r10vs.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
6996f41d092f1d31, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed (audit)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).