component
SWHA60N04V
Public Made by Adomby adom
Samwin MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSWHA60N04V
Samwin · MOSFETs · DFN-8(5x6)
SWHA60N04V from Samwin, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the integral body diode has a forward voltage drop of 1.4 V at IS=60A, VGS=0V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the integral body diode has a forward voltage drop of 1.4 V at IS=60A, VGS=0V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the integral body diode has a forward voltage drop of 1.4 V at IS=60A, VGS=0V. |
| 4 | G | input | Gate terminal; gate-to-source voltage is rated ±20 V (absolute maximum) and the gate threshold voltage is 1 V to 3 V at VDS=VGS, ID=250uA. |
| 5 | D | passive | Drain terminal; drain-to-source voltage is rated 40 V and continuous drain current is 60 A at TC=25°C, limited by junction temperature. |
| 6 | D | passive | Drain terminal; drain-to-source voltage is rated 40 V and continuous drain current is 60 A at TC=25°C, limited by junction temperature. |
| 7 | D | passive | Drain terminal; drain-to-source voltage is rated 40 V and continuous drain current is 60 A at TC=25°C, limited by junction temperature. |
| 8 | D | passive | Drain terminal; drain-to-source voltage is rated 40 V and continuous drain current is 60 A at TC=25°C, limited by junction temperature. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | 40 | V | 1 | |||
| Continuous drain current (@TC=25oC) | ID | 60 | A | @TC=25oC; drain current limited by junction temperature | 1 | ||
| Continuous drain current (@TC=100oC) | ID | 38 | A | @TC=100oC; drain current limited by junction temperature | 1 | ||
| Drain current pulsed (note 1) | IDM | 240 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -20 | 20 | V | 1 | ||
| Single pulsed avalanche energy (note 2) | EAS | 792 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy (note 1) | EAR | 18 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt (note 3) | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation (@Ta=25oC) | PD | 3.2 | W | @Ta=25oC | 1 | ||
| Operating junction temperature & storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Thermal resistance, Junction to ambient | Rthja | 39 | oC/W | on 1 in2 pad of 2oz copper (note under Order Codes) | 1 | ||
| Drain to source breakdown voltage | BVDSS | 40 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=40V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=32V, TC=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 1 | 3 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 2.9 | 3.6 | mΩ | VGS=4.5V, ID=30A | 2 | |
| Drain to source on state resistance | RDS(ON) | 2.3 | 2.9 | mΩ | VGS=10V, ID=30A | 2 | |
| Drain to source on state resistance | RDS(ON) | 2.4 | 3 | mΩ | VGS=10V, ID=60A | 2 | |
| Diode forward voltage drop | VSD | 1.4 | V | IS=60A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
SWHA60N04V - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
swha60n04v-etched.step/swha60n04v-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swha60n04v.step/swha60n04v.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
b11170a52e59ec56, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).