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SWHA120R45VT

Public Made by Adom

by adom

Samwin MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWHA120R45VT

Samwin · MOSFETs · DFN-8(5x6)

SWHA120R45VT from Samwin, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the N-channel MOSFET; the integral body diode runs source to drain, with continuous source current IS up to 38 A.
2 Source passive Source terminal of the N-channel MOSFET; the integral body diode runs source to drain, with continuous source current IS up to 38 A.
3 Source passive Source terminal of the N-channel MOSFET; the integral body diode runs source to drain, with continuous source current IS up to 38 A.
4 Gate input Gate terminal of the MOSFET; gate-to-source voltage is rated at ±20 V.
5 Drain passive Drain terminal of the MOSFET; drain-to-source voltage is rated at 45 V and continuous drain current at 38 A (TC=25°C), limited by junction temperature.
6 Drain passive Drain terminal of the MOSFET; drain-to-source voltage is rated at 45 V and continuous drain current at 38 A (TC=25°C), limited by junction temperature.
7 Drain passive Drain terminal of the MOSFET; drain-to-source voltage is rated at 45 V and continuous drain current at 38 A (TC=25°C), limited by junction temperature.
8 Drain passive Drain terminal of the MOSFET; drain-to-source voltage is rated at 45 V and continuous drain current at 38 A (TC=25°C), limited by junction temperature.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Samwin
Package DFN-8(5x6)
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 45 V 1
Continuous drain current ID 38 A @TC=25oC; limited by junction temperature 1
Continuous drain current ID 24 A @TC=100oC; limited by junction temperature 1
Drain current pulsed IDM 152 A note 1 1
Continuous drain current IDSM 11 A @Ta=25oC 1
Continuous drain current IDSM 9.5 A @Ta=70oC 1
Gate to source voltage VGS -20 20 V 1
Single pulsed avalanche energy EAS 145 mJ note 2 1
Repetitive avalanche energy EAR 11 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 37.9 W @TC=25oC 1
Total power dissipation PD 2.6 W @Ta=25oC 1
Operating junction and storage temperature TSTG, TJ -55 150 oC 1
Thermal resistance, junction to case Rthjc 3.3 oC/W junction to case 1
Thermal resistance, junction to ambient Rthja 49 oC/W on a 1 in2 pad of 2oz copper 1
Drain to source breakdown voltage BVDSS 45 V VGS=0V, ID=250uA 2
Gate to source leakage current, forward IGSS 100 nA VGS=20V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-20V, VDS=0V 2
Gate threshold voltage VGS(TH) 1 2.2 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 12 18 mΩ VGS=4.5V, ID=5.5A, TJ=25oC 2
Drain to source on state resistance RDS(ON) 10.5 15 mΩ VGS=10V, ID=5.5A, TJ=25oC 2
Drain to source on state resistance RDS(ON) 16.2 mΩ VGS=10V, ID=5.5A, TJ=125oC 2
Drain to source leakage current IDSS 1 uA VDS=45V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=36V, TJ=125oC 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.04 V/oC ID=250uA, referenced to 25oC 2
Forward transconductance Gfs 31 S VDS=5V, ID=5.5A 2
Diode forward voltage drop VSD 1.4 V IS=11A, VGS=0V 2
Reverse recovery time trr 14 ns IS=11A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 3 nC IS=11A, VGS=0V, dIF/dt=100A/us 2
Input capacitance Ciss 2105 pF VGS=0V, VDS=22.5V, f=1MHz 2
Output capacitance Coss 182 pF VGS=0V, VDS=22.5V, f=1MHz 2
Reverse transfer capacitance Crss 156 pF VGS=0V, VDS=22.5V, f=1MHz 2
Turn on delay time td(on) 8 ns VDS=22.5V, ID=11A, RG=4.7Ω, VGS=10V (note 4,5) 2
Rising time tr 50 ns VDS=22.5V, ID=11A, RG=4.7Ω, VGS=10V (note 4,5) 2
Turn off delay time td(off) 55 ns VDS=22.5V, ID=11A, RG=4.7Ω, VGS=10V (note 4,5) 2
Fall time tf 17 ns VDS=22.5V, ID=11A, RG=4.7Ω, VGS=10V (note 4,5) 2
Total gate charge Qg 45 nC VDS=36V, VGS=10V, ID=11A, Ig=3mA (note 4,5) 2
Gate-source charge Qgs 6 nC VDS=36V, VGS=10V, ID=11A, Ig=3mA (note 4,5) 2
Gate-drain charge Qgd 11 nC VDS=36V, VGS=10V, ID=11A, Ig=3mA (note 4,5) 2
Gate resistance Rg 3.4 Ω VDS=0V, Scan F mode 2
Continuous source current IS 38 A Integral reverse p-n junction diode in the MOSFET 2
Pulsed source current ISM 152 A 2

CAD (KiCad official)

  • Symbol: SWHA120R45VT
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: swha120r45vt-etched.step / swha120r45vt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swha120r45vt.step / swha120r45vt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 43e0f3c0cfa25462, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF