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SWHA088R06VT

Public Made by Adom

by adom

Samwin MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWHA088R06VT

Samwin · MOSFETs · DFN-8(5x6)

SWHA088R06VT from Samwin, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the datasheet rates the continuous source current (IS) at 50 A.
2 S passive Source terminal of the N-channel MOSFET; the datasheet rates the continuous source current (IS) at 50 A.
3 S passive Source terminal of the N-channel MOSFET; the datasheet rates the continuous source current (IS) at 50 A.
4 G input Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated ±20 V.
5 D passive Drain terminal of the N-channel MOSFET; drain-to-source voltage is rated 60 V and continuous drain current is 50 A at TC=25°C, with the drain pins forming the solder mounting surface for thermal resistance.
6 D passive Drain terminal of the N-channel MOSFET; drain-to-source voltage is rated 60 V and continuous drain current is 50 A at TC=25°C, with the drain pins forming the solder mounting surface for thermal resistance.
7 D passive Drain terminal of the N-channel MOSFET; drain-to-source voltage is rated 60 V and continuous drain current is 50 A at TC=25°C, with the drain pins forming the solder mounting surface for thermal resistance.
8 D passive Drain terminal of the N-channel MOSFET; drain-to-source voltage is rated 60 V and continuous drain current is 50 A at TC=25°C, with the drain pins forming the solder mounting surface for thermal resistance.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Samwin
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 60 V 1
Continuous drain current ID 50 A @TC=25oC; limited by junction temperature 1
Continuous drain current ID 33 A @TC=100oC; limited by junction temperature 1
Drain current pulsed IDM 200 A note 1 1
Continuous drain current IDSM 13 A @Ta=25oC 1
Continuous drain current IDSM 10 A @Ta=70oC 1
Gate to source voltage VGS -20 20 V 1
Single pulsed avalanche energy EAS 192 mJ note 2 1
Repetitive avalanche energy EAR 11 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 40.3 W @Tc=25oC 1
Total power dissipation PD 2.8 W @Ta=25oC 1
Operating junction and storage temperature TSTG, TJ -55 150 oC 1
Thermal resistance, junction to case Rthjc 3.1 oC/W 1
Thermal resistance, junction to ambient Rthja 45 oC/W on a 1 in2 pad of 2oz copper 1
Drain to source breakdown voltage BVDSS 60 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=60V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=48V, TJ=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=20V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-20V, VDS=0V 2
Gate threshold voltage VGS(TH) 1.4 2.4 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 9.9 12.4 mΩ VGS=4.5V, ID=5A, TJ=25oC 2
Drain to source on state resistance RDS(ON) 8.3 10.4 mΩ VGS=10V, ID=5A, TJ=25oC 2
Drain to source on state resistance RDS(ON) 13.3 mΩ VGS=10V, ID=5A, TJ=125oC 2
Continuous source current IS 50 A integral reverse p-n junction diode 2
Pulsed source current ISM 200 A 2
Diode forward voltage drop VSD 1.4 V IS=11A, VGS=0V 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.05 V/oC ID=250uA, referenced to 25oC 2
Forward transconductance Gfs 25 S VDS=10V, ID=5A 2
Input capacitance Ciss 2010 pF VGS=0V, VDS=30V, f=1MHz 2
Output capacitance Coss 207 pF VGS=0V, VDS=30V, f=1MHz 2
Reverse transfer capacitance Crss 165 pF VGS=0V, VDS=30V, f=1MHz 2
Turn on delay time td(on) 12 ns VDS=30V, ID=11A, RG=4.7Ω, VGS=10V (note 4,5) 2
Rising time tr 42 ns VDS=30V, ID=11A, RG=4.7Ω, VGS=10V (note 4,5) 2
Turn off delay time td(off) 45 ns VDS=30V, ID=11A, RG=4.7Ω, VGS=10V (note 4,5) 2
Fall time tf 20 ns VDS=30V, ID=11A, RG=4.7Ω, VGS=10V (note 4,5) 2
Total gate charge Qg 49 nC VDS=48V, VGS=10V, ID=11A, IG=3mA (note 4,5) 2
Gate-source charge Qgs 6 nC VDS=48V, VGS=10V, ID=11A, IG=3mA (note 4,5) 2
Gate-drain charge Qgd 15 nC VDS=48V, VGS=10V, ID=11A, IG=3mA (note 4,5) 2
Gate resistance Rg 1.47 Ω VDS=0V, Scan F mode 2
Reverse recovery time trr 27 ns IS=11A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 12 nC IS=11A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWHA088R06VT
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: swha088r06vt-etched.step / swha088r06vt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swha088r06vt.step / swha088r06vt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 7bc3d7b879d51e4d, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF