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SWHA069R10VS

Public Made by Adom

by adom

Samwin MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWHA069R10VS

Samwin · MOSFETs · DFN5x6-8

SWHA069R10VS from Samwin, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the N-channel MOSFET (pins 1,2,3 are Source); continuous drain current up to 60 A at Tc=25°C.
2 Source passive Source terminal of the N-channel MOSFET (pins 1,2,3 are Source); continuous drain current up to 60 A at Tc=25°C.
3 Source passive Source terminal of the N-channel MOSFET (pins 1,2,3 are Source); continuous drain current up to 60 A at Tc=25°C.
4 Gate input Gate terminal of the MOSFET with a maximum gate-to-source voltage of ±20 V and a threshold of 1 to 3 V.
5 Drain passive Drain terminal (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 100 V.
6 Drain passive Drain terminal (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 100 V.
7 Drain passive Drain terminal (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 100 V.
8 Drain passive Drain terminal (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 100 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Samwin
Package DFN5x6-8
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 100 V 1
Continuous drain current ID 60 A @Tc=25oC 1
Continuous drain current ID 45 A @Tc=100oC 1
Drain current pulsed IDM 240 A note 1 1
Continuous drain current IDSM 15 A @Ta=25oC 1
Continuous drain current IDSM 12 A @Ta=70oC 1
Gate to source voltage VGS -20 20 V 1
Single pulsed avalanche energy EAS 277 mJ note 2 1
Repetitive avalanche energy EAR 18 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 56.8 W @Tc=25oC 1
Total power dissipation PD 2.7 W @Ta=25oC 1
Operating junction & storage temperature TSTG, TJ -55 150 oC 1
Thermal resistance, junction to case Rthjc 2.2 oC/W 1
Thermal resistance, junction to ambient Rthja 47 oC/W 1 in2 pad of 2oz copper 1
Drain to source breakdown voltage BVDSS 100 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=100V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=80V, TJ=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=20V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-20V, VDS=0V 2
Gate threshold voltage VGS(TH) 1 3 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 9 11 mΩ VGS=4.5V, ID=6.5A,TJ=25oC 2
Drain to source on state resistance RDS(ON) 7 8.9 mΩ VGS=10V, ID=6.5A,TJ=25oC 2
Drain to source on state resistance RDS(ON) 10.5 mΩ VGS=10V, ID=6.5A,TJ=125oC 2
Continuous source current IS 60 A Integral reverse p-n Junction diode in the MOSFET 2
Pulsed source current ISM 240 A 2
Diode forward voltage drop VSD 1.4 V IS=13A, VGS=0V 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.05 V/oC ID=250uA, referenced to 25oC 2
Forward transconductance Gfs 32 S VDS=10V, ID=6.5A 2
Input capacitance Ciss 3041 pF VGS=0V, VDS=50V, f=1MHz 2
Output capacitance Coss 494 pF VGS=0V, VDS=50V, f=1MHz 2
Reverse transfer capacitance Crss 11 pF VGS=0V, VDS=50V, f=1MHz 2
Turn on delay time td(on) 14 ns VDS=50V, ID=13A, RG=4.7Ω, VGS=10V 2
Rising time tr 33 ns VDS=50V, ID=13A, RG=4.7Ω, VGS=10V 2
Turn off delay time td(off) 45 ns VDS=50V, ID=13A, RG=4.7Ω, VGS=10V 2
Fall time tf 14 ns VDS=50V, ID=13A, RG=4.7Ω, VGS=10V 2
Total gate charge Qg 45 nC VDS=80V,VGS=10V,ID=13A, IG=6.5mA 2
Gate-source charge Qgs 9 nC VDS=80V,VGS=10V,ID=13A, IG=6.5mA 2
Gate-drain charge Qgd 8.4 nC VDS=80V,VGS=10V,ID=13A, IG=6.5mA 2
Gate resistance Rg 1.5 Ω VDS=0V, Scan F mode 2
Reverse recovery time trr 61 ns IS=13A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 98 nC IS=13A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWHA069R10VS
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: swha069r10vs-etched.step / swha069r10vs-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swha069r10vs.step / swha069r10vs.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 52a8bbfd635f2ee9, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF