# SWHA069R06VT

**Samwin** · MOSFETs · DFN-8(5x6)

SWHA069R06VT from Samwin, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the N-channel MOSFET (pins 1,2,3 are Source); continuous drain current is 60 A at Tc=25°C. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET (pins 1,2,3 are Source); continuous drain current is 60 A at Tc=25°C. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET (pins 1,2,3 are Source); continuous drain current is 60 A at Tc=25°C. |
| 4 | Gate | input | Gate control terminal with a maximum gate-to-source voltage of ±20 V and threshold of 1.4 to 2.4 V. |
| 5 | Drain | passive | Drain terminal (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 60 V. |
| 6 | Drain | passive | Drain terminal (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 60 V. |
| 7 | Drain | passive | Drain terminal (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 60 V. |
| 8 | Drain | passive | Drain terminal (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 60 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS |  |  | 60 | V |  | 1 |
| Continuous drain current | ID |  |  | 60 | A | Tc=25°C | 1 |
| Continuous drain current | ID |  |  | 51 | A | Tc=100°C | 1 |
| Drain current pulsed | IDM |  |  | 240 | A | note 1 | 1 |
| Continuous drain current | IDSM |  |  | 19 | A | Ta=25°C | 1 |
| Continuous drain current | IDSM |  |  | 15 | A | Ta=70°C | 1 |
| Gate to source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Single pulsed avalanche energy | EAS |  |  | 324 | mJ | note 2 | 1 |
| Repetitive avalanche energy | EAR |  |  | 18 | mJ | note 1 | 1 |
| Peak diode recovery dv/dt | dv/dt |  |  | 5 | V/ns | note 3 | 1 |
| Total power dissipation | PD |  |  | 59.5 | W | Tc=25°C | 1 |
| Total power dissipation | PD |  |  | 3 | W | Ta=25°C | 1 |
| Operating junction and storage temperature | TSTG, TJ | -55 |  | 150 | °C |  | 1 |
| Drain to source breakdown voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250uA | 2 |
| Drain to source leakage current | IDSS |  |  | 1 | uA | VDS=60V, VGS=0V | 2 |
| Drain to source leakage current | IDSS |  |  | 50 | uA | VDS=48V, TJ=125°C | 2 |
| Gate to source leakage current, forward | IGSS |  |  | 100 | nA | VGS=20V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS | -100 |  |  | nA | VGS=-20V, VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | 1.4 |  | 2.4 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) |  | 5.7 | 7.1 | mΩ | VGS=4.5V, ID=8A, TJ=25°C | 2 |
| Drain to source on state resistance | RDS(ON) |  | 4.9 | 6.4 | mΩ | VGS=10V, ID=8A, TJ=25°C | 2 |
| Drain to source on state resistance | RDS(ON) |  |  | 7.6 | mΩ | VGS=10V, ID=8A, TJ=125°C | 2 |
| Continuous source current | IS |  |  | 60 | A | Integral reverse p-n junction diode in the MOSFET | 2 |
| Pulsed source current | ISM |  |  | 240 | A |  | 2 |
| Diode forward voltage drop | VSD |  |  | 1.4 | V | IS=15A, VGS=0V | 2 |
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ |  | 0.04 |  | V/°C | ID=250uA, referenced to 25°C | 2 |
| Forward transconductance | Gfs |  | 45 |  | S | VDS=5V, ID=8A | 2 |
| Input capacitance | Ciss |  | 3850 |  | pF | VGS=0V, VDS=30V, f=1MHz | 2 |
| Output capacitance | Coss |  | 442 |  | pF | VGS=0V, VDS=30V, f=1MHz | 2 |
| Reverse transfer capacitance | Crss |  | 354 |  | pF | VGS=0V, VDS=30V, f=1MHz | 2 |
| Turn on delay time | td(on) |  | 16 |  | ns | VDS=30V, ID=15A, RG=4.7Ω, VGS=10V | 2 |
| Rising time | tr |  | 37 |  | ns | VDS=30V, ID=15A, RG=4.7Ω, VGS=10V | 2 |
| Turn off delay time | td(off) |  | 72 |  | ns | VDS=30V, ID=15A, RG=4.7Ω, VGS=10V | 2 |
| Fall time | tf |  | 33 |  | ns | VDS=30V, ID=15A, RG=4.7Ω, VGS=10V | 2 |
| Total gate charge | Qg |  | 84 |  | nC | VDS=48V, VGS=10V, ID=15A | 2 |
| Gate-source charge | Qgs |  | 10 |  | nC | VDS=48V, VGS=10V, ID=15A | 2 |
| Gate-drain charge | Qgd |  | 29 |  | nC | VDS=48V, VGS=10V, ID=15A | 2 |
| Gate resistance | Rg |  | 1.4 |  | Ω | VDS=0V, Scan F mode | 2 |
| Reverse recovery time | trr |  | 27 |  | ns | IS=15A, VGS=0V, dIF/dt=100A/us | 2 |
| Reverse recovery charge | Qrr |  | 14 |  | nC | IS=15A, VGS=0V, dIF/dt=100A/us | 2 |
| Thermal resistance, junction to case | Rthjc |  | 2.1 |  | °C/W |  | 1 |
| Thermal resistance, junction to ambient | Rthja |  | 41 |  | °C/W | 1 in2 pad of 2oz copper | 1 |

## CAD (KiCad official)

- Symbol: `SWHA069R06VT`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `swha069r06vt-etched.step` / `swha069r06vt-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `swha069r06vt.step` / `swha069r06vt.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Samwin datasheet](docs/swha069r06vt-datasheet.pdf) (6 pp, sha256 `dd3c78d89f3bde1d`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/swha069r06vt-datasheet.pdf)