component
SWF8N65DB
Public Made by Adomby adom
Samwin MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SWF8N65DB
Samwin · MOSFETs · TO-220F
SWF8N65DB from Samwin, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated ±30 V (VGS). |
| 2 | Drain | passive | Drain terminal of the MOSFET; drain-to-source voltage is rated 650 V (VDSS) and continuous drain current is 8 A at TC=25°C. |
| 3 | Source | passive | Source terminal of the MOSFET; the integral reverse p-n junction body diode is connected between drain and source. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | 650 | V | 1 | |||
| Continuous drain current (TC=25oC) | ID | 8 | A | TC=25oC; drain current limited by junction temperature | 1 | ||
| Continuous drain current (TC=100oC) | ID | 5 | A | TC=100oC; drain current limited by junction temperature | 1 | ||
| Drain current pulsed | IDM | 32 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -30 | 30 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 384 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 23 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation (TO-220F) | PD | 17.9 | W | TC=25oC | 1 | ||
| Operating junction and storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | oC | 1/8 from case for 5 seconds | 1 | ||
| Derating factor above 25oC (TO-220F) | 0.14 | W/oC | above 25oC | 1 | |||
| Thermal resistance, junction to case (TO-220F) | Rthjc | 7 | oC/W | 1 | |||
| Breakdown voltage | BVDSS | 650 | V | VGS=0V, ID=250uA | 2 | ||
| Gate threshold voltage | VGS(TH) | 2.5 | 4.5 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 1 | 1.2 | Ω | VGS=10V, ID=4A | 2 | |
| Drain to source leakage current | IDSS | 1 | uA | VDS=650V, VGS=0V | 2 | ||
| Drain to source leakage current at 125oC | IDSS | 50 | uA | VDS=520V, TC=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.61 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Forward transconductance | Gfs | 7 | S | VDS=30V, ID=4A | 2 | ||
| Input capacitance | Ciss | 1770 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Output capacitance | Coss | 126 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 13 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Turn on delay time | td(on) | 22 | ns | VDS=325V, ID=8A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Rising time | tr | 34 | ns | VDS=325V, ID=8A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Turn off delay time | td(off) | 72 | ns | VDS=325V, ID=8A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Fall time | tf | 32 | ns | VDS=325V, ID=8A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Total gate charge | Qg | 34 | nC | VDS=520V, VGS=10V, ID=8A (note 4,5) | 2 | ||
| Gate-source charge | Qgs | 9 | nC | VDS=520V, VGS=10V, ID=8A (note 4,5) | 2 | ||
| Gate-drain charge | Qgd | 14 | nC | VDS=520V, VGS=10V, ID=8A (note 4,5) | 2 | ||
| Gate resistance | Rg | 1.6 | Ω | VDS=0V, Scan F mode | 2 | ||
| Continuous source current | IS | 8 | A | Integral reverse p-n junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 32 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.4 | V | IS=8A, VGS=0V | 2 | ||
| Reverse recovery time | trr | 478 | ns | IS=8A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Reverse recovery charge | Qrr | 4.3 | uC | IS=8A, VGS=0V, dIF/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
SWF8N65DB - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (7 pp, sha256
60400363099e3bc8, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SWF8N65DB
**Samwin** · MOSFETs · TO-220F
SWF8N65DB from Samwin, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated ±30 V (VGS). |
| 2 | Drain | passive | Drain terminal of the MOSFET; drain-to-source voltage is rated 650 V (VDSS) and continuous drain current is 8 A at TC=25°C. |
| 3 | Source | passive | Source terminal of the MOSFET; the integral reverse p-n junction body diode is connected between drain and source. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | | | 650 | V | | 1 |
| Continuous drain current (TC=25oC) | ID | | | 8 | A | TC=25oC; drain current limited by junction temperature | 1 |
| Continuous drain current (TC=100oC) | ID | | | 5 | A | TC=100oC; drain current limited by junction temperature | 1 |
| Drain current pulsed | IDM | | | 32 | A | note 1 | 1 |
| Gate to source voltage | VGS | -30 | | 30 | V | | 1 |
| Single pulsed avalanche energy | EAS | | | 384 | mJ | note 2 | 1 |
| Repetitive avalanche energy | EAR | | | 23 | mJ | note 1 | 1 |
| Peak diode recovery dv/dt | dv/dt | | | 5 | V/ns | note 3 | 1 |
| Total power dissipation (TO-220F) | PD | | | 17.9 | W | TC=25oC | 1 |
| Operating junction and storage temperature | TSTG, TJ | -55 | | 150 | oC | | 1 |
| Maximum lead temperature for soldering | TL | | | 300 | oC | 1/8 from case for 5 seconds | 1 |
| Derating factor above 25oC (TO-220F) | | | 0.14 | | W/oC | above 25oC | 1 |
| Thermal resistance, junction to case (TO-220F) | Rthjc | | 7 | | oC/W | | 1 |
| Breakdown voltage | BVDSS | 650 | | | V | VGS=0V, ID=250uA | 2 |
| Gate threshold voltage | VGS(TH) | 2.5 | | 4.5 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) | | 1 | 1.2 | Ω | VGS=10V, ID=4A | 2 |
| Drain to source leakage current | IDSS | | | 1 | uA | VDS=650V, VGS=0V | 2 |
| Drain to source leakage current at 125oC | IDSS | | | 50 | uA | VDS=520V, TC=125oC | 2 |
| Gate to source leakage current, forward | IGSS | | | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS | -100 | | | nA | VGS=-30V, VDS=0V | 2 |
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | | 0.61 | | V/oC | ID=250uA, referenced to 25oC | 2 |
| Forward transconductance | Gfs | | 7 | | S | VDS=30V, ID=4A | 2 |
| Input capacitance | Ciss | | 1770 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Output capacitance | Coss | | 126 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Reverse transfer capacitance | Crss | | 13 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Turn on delay time | td(on) | | 22 | | ns | VDS=325V, ID=8A, RG=25Ω, VGS=10V (note 4,5) | 2 |
| Rising time | tr | | 34 | | ns | VDS=325V, ID=8A, RG=25Ω, VGS=10V (note 4,5) | 2 |
| Turn off delay time | td(off) | | 72 | | ns | VDS=325V, ID=8A, RG=25Ω, VGS=10V (note 4,5) | 2 |
| Fall time | tf | | 32 | | ns | VDS=325V, ID=8A, RG=25Ω, VGS=10V (note 4,5) | 2 |
| Total gate charge | Qg | | 34 | | nC | VDS=520V, VGS=10V, ID=8A (note 4,5) | 2 |
| Gate-source charge | Qgs | | 9 | | nC | VDS=520V, VGS=10V, ID=8A (note 4,5) | 2 |
| Gate-drain charge | Qgd | | 14 | | nC | VDS=520V, VGS=10V, ID=8A (note 4,5) | 2 |
| Gate resistance | Rg | | 1.6 | | Ω | VDS=0V, Scan F mode | 2 |
| Continuous source current | IS | | | 8 | A | Integral reverse p-n junction diode in the MOSFET | 2 |
| Pulsed source current | ISM | | | 32 | A | | 2 |
| Diode forward voltage drop | VSD | | 1.4 | | V | IS=8A, VGS=0V | 2 |
| Reverse recovery time | trr | | 478 | | ns | IS=8A, VGS=0V, dIF/dt=100A/us | 2 |
| Reverse recovery charge | Qrr | | 4.3 | | uC | IS=8A, VGS=0V, dIF/dt=100A/us | 2 |
## CAD (KiCad official)
- Symbol: `SWF8N65DB`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Samwin datasheet](docs/swf8n65db-datasheet.pdf) (7 pp, sha256 `60400363099e3bc8`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/swf8n65db-datasheet.pdf)