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SWF7N65DD

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Samwin MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWF7N65DD

Samwin · MOSFETs · TO-220F

SWF7N65DD from Samwin, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel enhancement-mode MOSFET; the gate-to-source voltage is rated ±30 V.
2 Drain passive Drain terminal of the MOSFET; drain-to-source voltage is rated 650 V with continuous drain current of 7 A at TC=25oC.
3 Source passive Source terminal of the MOSFET; the integral body diode conducts from source to drain with continuous source current of 7 A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-220F
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 650 V 1
Continuous drain current (@TC=25oC) ID 7 A @TC=25oC 1
Continuous drain current (@TC=100oC) ID 4.4 A @TC=100oC 1
Drain current pulsed IDM 28 A note 1 1
Gate to source voltage VGS -30 30 V 1
Single pulsed avalanche energy EAS 373 mJ note 2 1
Repetitive avalanche energy EAR 30 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation (@TC=25oC) PD 22 W @TC=25oC 1
Derating factor above 25oC PD 0.2 W/oC above 25oC 1
Operating junction temperature and storage temperature TSTG, TJ -55 150 oC 1
Maximum lead temperature for soldering TL 300 oC 1/8 from case for 5 seconds 1
Thermal resistance, Junction to case Rthjc 5.7 oC/W TO-220F 1
Drain to source breakdown voltage BVDSS 650 V VGS=0V, ID=250uA 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.6 V/oC ID=250uA, referenced to 25oC 2
Drain to source leakage current IDSS 1 uA VDS=650V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=520V, TC=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Gate threshold voltage VGS(TH) 2.5 4.5 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 1.1 1.5 Ω VGS=10V, ID=3A 2
Continuous source current IS 7 A Integral reverse p-n Junction diode in the MOSFET 2
Pulsed source current ISM 28 A 2
Diode forward voltage drop VSD 1.4 V IS=7A, VGS=0V 2

CAD (KiCad official)

  • Symbol: SWF7N65DD
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (7 pp, sha256 32ae47bdf8679607, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF