component
SWF6N70DB
Public Made by Adomby adom
Samwin MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSWF6N70DB
Samwin · MOSFETs · TO-220F
SWF6N70DB from Samwin, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate to source voltage is rated at ±30 V (VGS). |
| 2 | Drain | passive | Drain to source voltage is rated at 700 V (VDSS) and continuous drain current at TC=25°C is 6 A, limited by junction temperature. |
| 3 | Source | passive | Source connects to the integral reverse p-n junction diode of the MOSFET, with continuous source current rated at 6 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | 700 | V | 1 | |||
| Continuous drain current (@TC=25oC) | ID | 6 | A | @TC=25oC; drain current limited by junction temperature | 1 | ||
| Continuous drain current (@TC=100oC) | ID | 3.8 | A | @TC=100oC; drain current limited by junction temperature | 1 | ||
| Drain current pulsed | IDM | 24 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -30 | 30 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 360 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 25 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation (@TC=25oC) | PD | 25.5 | W | @TC=25oC; TO-220F column | 1 | ||
| Derating factor above 25oC | 0.2 | W/oC | TO-220F column | 1 | |||
| Operating junction and storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | oC | 1/8 from case for 5 seconds | 1 | ||
| Thermal resistance, Junction to case | Rthjc | 4.9 | oC/W | TO-220F column | 1 | ||
| Drain to source breakdown voltage | BVDSS | 700 | V | VGS=0V, ID=250uA | 2 | ||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.66 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=700V, VGS=0V | 2 | ||
| Drain to source leakage current at high temperature | IDSS | 50 | uA | VDS=560V, TC=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 2.5 | 4.5 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 1.4 | 1.7 | Ω | VGS=10V, ID=3A | 2 | |
| Forward transconductance | Gfs | 5.5 | S | VDS=30V, ID=3A | 2 | ||
| Input capacitance | Ciss | 1440 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Output capacitance | Coss | 93 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 11 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Turn on delay time | td(on) | 18 | ns | VDS=350V, ID=6A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Rising time | tr | 30 | ns | VDS=350V, ID=6A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Turn off delay time | td(off) | 62 | ns | VDS=350V, ID=6A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Fall time | tf | 30 | ns | VDS=350V, ID=6A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Total gate charge | Qg | 30 | nC | VDS=560V, VGS=10V, ID=6A (note 4,5) | 2 | ||
| Gate-source charge | Qgs | 7 | nC | VDS=560V, VGS=10V, ID=6A (note 4,5) | 2 | ||
| Gate-drain charge | Qgd | 12 | nC | VDS=560V, VGS=10V, ID=6A (note 4,5) | 2 | ||
| Gate resistance | Rg | 1.4 | Ω | VDS=0V, Scan F mode | 2 | ||
| Continuous source current | IS | 6 | A | Integral reverse p-n junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 24 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.4 | V | IS=6A, VGS=0V | 2 | ||
| Reverse recovery time | trr | 486 | ns | IS=6A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Reverse recovery charge | Qrr | 3.8 | uC | IS=6A, VGS=0V, dIF/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
SWF6N70DB - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
a9dee15d6cacbfdb, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).