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Contents

README

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SWF6N70DA

Samwin · MOSFETs · TO-220F

SWF6N70DA from Samwin, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel enhanced-mode MOSFET; gate-to-source voltage is rated ±30 V.
2 Drain passive Drain terminal; drain-to-source voltage is rated 700 V and continuous drain current is 6 A at TC=25oC (limited by junction temperature).
3 Source passive Source terminal; the integral body diode is rated 6 A continuous and 24 A pulsed.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 700 V 1
Continuous drain current (@TC=25oC) ID 6 A TC=25oC 1
Continuous drain current (@TC=100oC) ID 3.8 A TC=100oC 1
Drain current pulsed IDM 24 A note 1 1
Gate to source voltage VGS -30 30 V 1
Single pulsed avalanche energy EAS 216 mJ note 2 1
Repetitive avalanche energy EAR 20 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation (TO220F) PD 21.9 W TC=25oC 1
Derating factor above 25oC (TO220F) 0.18 W/oC above 25oC 1
Operating junction and storage temperature TSTG, TJ -55 150 oC 1
Maximum lead temperature for soldering TL 300 oC 1/8 from case for 5 seconds 1
Drain to source breakdown voltage BVDSS 700 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=700V, VGS=0V 2
Drain to source leakage current at high temperature IDSS 50 uA VDS=560V, TC=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Gate threshold voltage VGS(TH) 2.5 4.5 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 1.7 1.9 Ω VGS=10V, ID=3A 2
Continuous source current IS 6 A Integral reverse p-n junction diode in the MOSFET 2
Pulsed source current ISM 24 A 2
Thermal resistance, Junction to case (TO220F) Rthjc 5.7 oC/W 2

CAD (KiCad official)

  • Symbol: SWF6N70DA
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (9 pp, sha256 98b085955fbc0369, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF