# SWF4N80D

**Samwin** · MOSFETs · TO-220F

SWF4N80D from Samwin, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the gate-to-source voltage VGS is rated at ±30 V. |
| 2 | Drain | passive | Drain terminal; drain-to-source voltage VDSS is rated at 800 V and continuous drain current at TC=25°C is 4 A. |
| 3 | Source | passive | Source terminal; continuous source current is rated at 4 A and pulsed source current at 16 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS |  |  | 800 | V |  | 1 |
| Continuous drain current (@TC=25oC) | ID |  |  | 4 | A | @TC=25oC; drain current limited by junction temperature | 1 |
| Continuous drain current (@TC=100oC) | ID |  |  | 2.5 | A | @TC=100oC; drain current limited by junction temperature | 1 |
| Drain current pulsed | IDM |  |  | 16 | A | note 1 | 1 |
| Gate to source voltage | VGS | -30 |  | 30 | V |  | 1 |
| Single pulsed avalanche energy | EAS |  |  | 128 | mJ | note 2 | 1 |
| Repetitive avalanche energy | EAR |  |  | 15 | mJ | note 1 | 1 |
| Peak diode recovery dv/dt | dv/dt |  |  | 5 | V/ns | note 3 | 1 |
| Total power dissipation (TO-220F) | PD |  |  | 22 | W | @TC=25oC | 1 |
| Derating factor above 25oC (TO-220F) |  |  |  | 0.18 | W/oC | above 25oC | 1 |
| Operating junction and storage temperature | TSTG, TJ | -55 |  | 150 | oC |  | 1 |
| Maximum lead temperature for soldering | TL |  |  | 300 | oC | 1/8 from case for 5 seconds | 1 |
| Thermal resistance, junction to case (TO-220F) | Rthjc |  |  | 5.6 | oC/W |  | 1 |
| Thermal resistance, junction to ambient (TO-220F) | Rthja |  |  | 50 | oC/W |  | 1 |
| Drain to source breakdown voltage | BVDSS | 800 |  |  | V | VGS=0V, ID=250uA | 2 |
| Gate threshold voltage | VGS(TH) | 2.5 |  | 4.5 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) |  | 3.2 | 3.8 | Ω | VGS=10V, ID=2A | 2 |
| Gate to source leakage current, forward | IGSS |  |  | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS | -100 |  |  | nA | VGS=-30V, VDS=0V | 2 |

## CAD (KiCad official)

- Symbol: `SWF4N80D`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Samwin datasheet](docs/swf4n80d-datasheet.pdf) (7 pp, sha256 `d14935bbcd9d361d`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/swf4n80d-datasheet.pdf)