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Contents

README

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SWF4N70D

Samwin · MOSFETs · TO-220F

SWF4N70D from Samwin, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with a gate-to-source voltage rating of ±30 V and a gate threshold voltage of 2.5 V min to 4.5 V max at VDS=VGS, ID=250uA.
2 Drain passive Drain terminal with a drain-to-source voltage rating of 700 V and continuous drain current of 4 A at TC=25oC, limited by junction temperature.
3 Source passive Source terminal of the MOSFET, carrying a continuous body-diode source current of up to 4 A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-220F
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 700 V 1
Continuous drain current ID 4 A @TC=25oC 1
Continuous drain current ID 2.5 A @TC=100oC 1
Drain current pulsed IDM 16 A 1
Gate to source voltage VGS -30 30 V 1
Single pulsed avalanche energy EAS 200 mJ 1
Repetitive avalanche energy EAR 10 mJ 1
Peak diode recovery dv/dt dv/dt 5 V/ns 1
Total power dissipation PD 20.7 W @TC=25oC 1
Operating junction temperature and storage temperature TSTG, TJ -55 150 oC 1
Maximum lead temperature for soldering purpose TL 300 oC 1/8 from case for 5 seconds 1
Thermal resistance, junction to case Rthjc 6.04 oC/W Junction to case 1
Drain to source breakdown voltage BVDSS 700 V VGS=0V, ID=250uA 2
Gate threshold voltage VGS(TH) 2.5 4.5 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 2.3 2.7 Ω VGS=10V, ID=2A 2
Drain to source leakage current IDSS 1 uA VDS=700V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=560V, TC=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Continuous source current IS 4 A Integral reverse p-n junction diode in the MOSFET 2
Pulsed source current ISM 16 A 2
Diode forward voltage drop VSD 1.4 V IS=4A, VGS=0V 2
Reverse recovery time trr 290 ns IS=4A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 2.5 uC IS=4A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWF4N70D
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (7 pp, sha256 c2b75c74bbdab17c, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF