# SWF2N65DB

**Samwin** · MOSFETs · TO-220F

SWF2N65DB from Samwin, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the gate-to-source voltage is rated ±30 V (VGS). |
| 2 | Drain | passive | Drain terminal; the drain-to-source voltage is rated 650 V (VDSS). |
| 3 | Source | passive | Source terminal; the continuous source current of the integral body diode is rated 2 A (IS). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS |  |  | 650 | V |  | 1 |
| Continuous drain current | ID |  |  | 2 | A | @TC=25oC; limited by junction temperature | 1 |
| Continuous drain current | ID |  |  | 1.3 | A | @TC=100oC; limited by junction temperature | 1 |
| Drain current pulsed | IDM |  |  | 8 | A | note 1 | 1 |
| Gate to source voltage | VGS | -30 |  | 30 | V |  | 1 |
| Single pulsed avalanche energy | EAS |  |  | 145 | mJ | note 2 | 1 |
| Repetitive avalanche energy | EAR |  |  | 14 | mJ | note 1 | 1 |
| Peak diode recovery dv/dt | dv/dt |  |  | 5 | V/ns | note 3 | 1 |
| Total power dissipation | PD |  |  | 16.4 | W | @TC=25oC | 1 |
| Derating factor above 25oC | PD |  |  | 0.13 | W/oC | above 25oC | 1 |
| Operating junction and storage temperature | TSTG, TJ | -55 |  | 150 | oC |  | 1 |
| Maximum lead temperature for soldering | TL |  |  | 300 | oC | 1/8 from case for 5 seconds | 1 |
| Thermal resistance, junction to case | Rthjc |  |  | 7.6 | oC/W |  | 1 |
| Thermal resistance, junction to ambient | Rthja |  |  | 50 | oC/W |  | 1 |
| Drain to source breakdown voltage | BVDSS | 650 |  |  | V | VGS=0V, ID=250uA | 2 |
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ |  | 0.49 |  | V/oC | ID=250uA, referenced to 25oC | 2 |
| Drain to source leakage current | IDSS |  |  | 1 | uA | VDS=650V, VGS=0V | 2 |
| Drain to source leakage current | IDSS |  |  | 50 | uA | VDS=520V, TC=125oC | 2 |
| Gate to source leakage current, forward | IGSS |  |  | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS |  |  | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | 2.5 |  | 4.5 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) |  | 3.9 | 4.9 | Ω | VGS=10V, ID=1A | 2 |
| Forward transconductance | Gfs |  | 1.9 |  | S | VDS=30V, ID=1A | 2 |
| Gate resistance | Rg |  | 3.4 |  | Ω | VDS=0V, Scan F mode | 2 |
| Continuous source current | IS |  |  | 2 | A | Integral reverse p-n Junction diode in the MOSFET | 2 |
| Pulsed source current | ISM |  |  | 8 | A |  | 2 |
| Diode forward voltage drop | VSD |  |  | 1.4 | V | IS=2A, VGS=0V | 2 |
| Reverse recovery time | trr |  | 344 |  | ns | IS=2A, VGS=0V, dIF/dt=100A/us | 2 |
| Reverse recovery charge | Qrr |  | 1.3 |  | uC |  | 2 |

## CAD (KiCad official)

- Symbol: `SWF2N65DB`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Samwin datasheet](docs/swf2n65db-datasheet.pdf) (6 pp, sha256 `16f0f63edf4381c3`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/swf2n65db-datasheet.pdf)